SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography

textA highly compact, one diode-one resistor (1D-1R) SiOx-based resistive switching memory device with nano-pillar architecture has been achieved for the first time using nano-sphere lithography. The average nano-pillar height and diameter are 1.3 μm and 130 nm, respectively. Low-voltage electroforming using DC bias and AC pulse response in the 50ns regime demonstrate good potential for high-speed, low-energy nonvolatile memory. Nano-sphere deposition, oxygen-plasma isolation, and nano-pillar formation by deep-Si-etching are studied and optimized for the 1D-1R configurations. Excellent electrical performance, data retention and the potential for wafer-scale integration are promising for future non-volatile memory applications.Materials Science and Engineerin

Printed dose-recording tag based on organic complementary circuits and ferroelectric nonvolatile memories.

We have demonstrated a printed electronic tag that monitors time-integrated sensor signals and writes to nonvolatile memories for later readout. The tag is additively fabricated on flexible plastic foil and comprises a thermistor divider, complementary organic circuits, and two nonvolatile memory cells. With a supply voltage below 30 V, the threshold temperatures can be tuned between 0 °C and 80 °C. The time-temperature dose measurement is calibrated for minute-scale integration. The two memory bits are sequentially written in a thermometer code to provide an accumulated dose record

Ferroelectric Rashba Semiconductors as a novel class of multifunctional materials

The discovery of novel properties, effects or microscopic mechanisms in modern materials science is often driven by the quest for combining, into a single compound, several functionalities: not only the juxtaposition of the latter functionalities, but especially their coupling, can open new horizons in basic condensed matter physics as well as in technology. Semiconductor spintronics makes no exception. In this context, we have discovered by means of density-functional simulations that, when a sizeable spin-orbit coupling is combined with ferroelectricity, such as in GeTe, one obtains novel multifunctional materials - called Ferro-Electric Rashba Semi-Conductors (FERSC) - where, thanks to a giant Rashba spin-splitting, the spin texture is controllable and switchable via an electric field. This peculiar spin-electric coupling can find a natural playground in small-gap insulators, such as chalcogenides, and can bring brand new assets into the field of electrically-controlled semiconductor spintronicsComment: 9 pages, 2 figures, in press on "Frontiers in Condensed Matter Physics