187,956 research outputs found
Correlations in a band insulator
We study a model of a covalent band insulator with on-site Coulomb repulsion
at half-filling using dynamical mean-field theory. Upon increasing the
interaction strength the system undergoes a discontinuous transition from a
correlated band insulator to a Mott insulator with hysteretic behavior at low
temperatures. Increasing the temperature in the band insulator close to the
insulator-insulator transition we find a crossover to a Mott insulator at
elevated temperatures. Remarkably, correlations decrease the energy gap in the
correlated band insulator. The gap renormalization can be traced to the
low-frequency behavior of the self-energy, analogously to the quasiparticle
renormalization in a Fermi liquid. While the uncorrelated band insulator is
characterized by a single gap for both charge and spin excitations, the spin
gap is smaller than the charge gap in the correlated system.Comment: 7 pages, 7 figure
Dirac-Electrons-Mediated Magnetic Proximity Effect in Topological Insulator / Magnetic Insulator Heterostructures
The possible realization of dissipationless chiral edge current in a
topological insulator / magnetic insulator heterostructure is based on the
condition that the magnetic proximity exchange coupling at the interface is
dominated by the Dirac surface states of the topological insulator. Here we
report a polarized neutron reflectometry observation of Dirac electrons
mediated magnetic proximity effect in a bulk-insulating topological insulator
(BiSb)Te / magnetic insulator EuS heterostructure.
We are able to maximize the proximity induced magnetism by applying an
electrical back gate to tune the Fermi level of topological insulator to be
close to the charge neutral point. A phenomenological model based on
diamagnetic screening is developed to explain the suppressed proximity induced
magnetism at high carrier density. Our work paves the way to utilize the
magnetic proximity effect at the topological insulator/magnetic insulator
hetero-interface for low-power spintronic applications.Comment: 5 pages main text with 4 figures; 2 pages supplemental materials;
suggestions and discussions are welcome
The Quantized Hall Insulator: A New Insulator in Two-Dimensions
Quite generally, an insulator is theoretically defined by a vanishing
conductivity tensor at the absolute zero of temperature. In classical
insulators, such as band insulators, vanishing conductivities lead to diverging
resistivities. In other insulators, in particular when a high magnetic field
(B) is added, it is possible that while the magneto-resistance diverges, the
Hall resistance remains finite, which is known as a Hall insulator. In this
letter we demonstrate experimentally the existence of another, more exotic,
insulator. This insulator, which terminates the quantum Hall effect series in a
two-dimensional electron system, is characterized by a Hall resistance which is
approximately quantized in the quantum unit of resistance h/e^2. This insulator
is termed a quantized Hall insulator. In addition we show that for the same
sample, the insulating state preceding the QHE series, at low-B, is of the HI
kind.Comment: 4 page
Quasi-Topological Insulator and Trigonal Warping in Gated Bilayer Silicene
Bilayer silicene has richer physical properties than bilayer graphene due to
its buckled structure together with its trigonal symmetric structure. The
buckled structure arises from a large ionic radius of silicon, and the trigonal
symmetry from a particular way of hopping between two silicenes. It is a
topologically trivial insulator since it carries a trivial
topological charge. Nevertheless, its physical properties are more akin to
those of a topological insulator than those of a band insulator. Indeed, a
bilayer silicene nanoribbon has edge modes which are almost gapless and
helical. We may call it a quasi-topological insulator. An important observation
is that the band structure is controllable by applying the electric field to a
bilayer silicene sheet. We investigate the energy spectrum of bilayer silicene
under electric field. Just as monolayer silicene undergoes a phase transition
from a topological insulator to a band insulator at a certain electric field,
bilayer silicene makes a transition from a quasi-topological insulator to a
band insulator beyond a certain critical field. Bilayer silicene is a metal
while monolayer silicene is a semimetal at the critical field. Furthermore we
find that there are several critical electric fields where the gap closes due
to the trigonal warping effect in bilayer silicene.Comment: 8 pages, 11 figures, to be published in J. Phys. Soc. Jp
Dynamical mean-field theory of Hubbard-Holstein model at half-filling: Zero temperature metal-insulator and insulator-insulator transitions
We study the Hubbard-Holstein model, which includes both the
electron-electron and electron-phonon interactions characterized by and
, respectively, employing the dynamical mean-field theory combined with
Wilson's numerical renormalization group technique. A zero temperature phase
diagram of metal-insulator and insulator-insulator transitions at half-filling
is mapped out which exhibits the interplay between and . As () is
increased, a metal to Mott-Hubbard insulator (bipolaron insulator) transition
occurs, and the two insulating states are distinct and can not be adiabatically
connected. The nature of and transitions between the three states are
discussed.Comment: 5 pages, 4 figures. Submitted to Physical Review Letter
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