The Design of A High Capacity and Energy Efficient Phase Change Main Memory

Higher energy-efficiency has become essential in servers for a variety of reasons that range from heavy power and thermal constraints, environmental issues and financial savings. With main memory responsible for at least 30% of the energy consumed by a server, a low power main memory is fundamental to achieving this energy efficiency DRAM has been the technology of choice for main memory for the last three decades primarily because it traditionally combined relatively low power, high performance, low cost and high density. However, with DRAM nearing its density limit, alternative low-power memory technologies, such as Phase-change memory (PCM), have become a feasible replacement. PCM limitations, such as limited endurance and low write performance, preclude simple drop-in replacement and require new architectures and algorithms to be developed. A PCM main memory architecture (PMMA) is introduced in this dissertation, utilizing both DRAM and PCM, to create an energy-efficient main memory that is able to replace a DRAM-only memory. PMMA utilizes a number of techniques and architectural changes to achieve a level of performance that is par with DRAM. PMMA achieves gains in energy-delay of up to 65%, with less than 5% of performance loss and extremely high energy gains. To address the other major shortcoming of PCM, namely limited endurance, a novel, low- overhead wear-leveling algorithm that builds on PMMA is proposed that increases the lifetime of PMMA to match the expected server lifetime so that both server and memory subsystems become obsolete at about the same time. We also study how to better use the excess capacity, traditionally available on PCM devices, to obtain the highest lifetime possible. We show that under specific endurance distributions, the naive choice does not achieve the highest lifetime. We devise rules that empower the designer to select algorithms and parameters to achieve higher lifetime or simplify the design knowing the impact on the lifetime. The techniques presented also apply to other storage class memories (SCM) memories that suffer from limited endurance

CEPRAM: Compression for Endurance in PCM RAM

We deal with the endurance problem of Phase Change Memories (PCM) by proposing Compression for Endurance in PCM RAM (CEPRAM), a technique to elongate the lifespan of PCM-based main memory through compression. We introduce a total of three compression schemes based on already existent schemes, but targeting compression for PCM-based systems. We do a two-level evaluation. First, we quantify the performance of the compression, in terms of compressed size, bit-flips and how they are affected by errors. Next, we simulate these parameters in a statistical simulator to study how they affect the endurance of the system. Our simulation results reveal that our technique, which is built on top of Error Correcting Pointers (ECP) but using a high-performance cache-oriented compression algorithm modified to better suit our purpose, manages to further extend the lifetime of the memory system. In particular, it guarantees that at least half of the physical pages are in usable condition for 25% longer than ECP, which is slightly more than 5% more than a scheme that can correct 16 failures per block

Wear Minimization for Cuckoo Hashing: How Not to Throw a Lot of Eggs into One Basket

We study wear-leveling techniques for cuckoo hashing, showing that it is possible to achieve a memory wear bound of $\log\log n+O(1)$ after the insertion of $n$ items into a table of size $Cn$ for a suitable constant $C$ using cuckoo hashing. Moreover, we study our cuckoo hashing method empirically, showing that it significantly improves on the memory wear performance for classic cuckoo hashing and linear probing in practice.Comment: 13 pages, 1 table, 7 figures; to appear at the 13th Symposium on Experimental Algorithms (SEA 2014

Write-rationing garbage collection for hybrid memories

Emerging Non-Volatile Memory (NVM) technologies offer high capacity and energy efficiency compared to DRAM, but suffer from limited write endurance and longer latencies. Prior work seeks the best of both technologies by combining DRAM and NVM in hybrid memories to attain low latency, high capacity, energy efficiency, and durability. Coarse-grained hardware and OS optimizations then spread writes out (wear-leveling) and place highly mutated pages in DRAM to extend NVM lifetimes. Unfortunately even with these coarse-grained methods, popular Java applications exact impractical NVM lifetimes of 4 years or less. This paper shows how to make hybrid memories practical, without changing the programming model, by enhancing garbage collection in managed language runtimes. We find object write behaviors offer two opportunities: (1) 70% of writes occur to newly allocated objects, and (2) 2% of objects capture 81% of writes to mature objects. We introduce writerationing garbage collectors that exploit these fine-grained behaviors. They extend NVM lifetimes by placing highly mutated objects in DRAM and read-mostly objects in NVM. We implement two such systems. (1) Kingsguard-nursery places new allocation in DRAM and survivors in NVM, reducing NVM writes by 5x versus NVM only with wear-leveling. (2) Kingsguard-writers (KG-W) places nursery objects in DRAM and survivors in a DRAM observer space. It monitors all mature object writes and moves unwritten mature objects from DRAM to NVM. Because most mature objects are unwritten, KG-W exploits NVM capacity while increasing NVM lifetimes by 11x. It reduces the energy-delay product by 32% over DRAM-only and 29% over NVM-only. This work opens up new avenues for making hybrid memories practical

Bit-Flip Aware Data Structures for Phase Change Memory

Big, non-volatile, byte-addressable, low-cost, and fast non-volatile memories like Phase Change Memory are appearing in the marketplace. They have the capability to unify both memory and storage and allow us to rethink the present memory hierarchy. An important draw-back to Phase Change Memory is limited write-endurance. In addition, Phase Change Memory shares with other Non-Volatile Random Access Memories an asym- metry in the energy costs of writes and reads. Best use of Non-Volatile Random Access Memories limits the number of times a Non-Volatile Random Access Memory cell changes contents, called a bit-flip. While the future of main memory is still unknown, we should already start to create data structures for them in order to shape the future era. This thesis investigates the creation of bit-flip aware data structures.The thesis first considers general ways in which a data structure can save bit- flips by smart overwrites and by using the exclusive-or of pointers. It then shows how a simple content dependent encoding can reduce bit-flips for web corpora. It then shows how to build hash based dictionary structures for Linear Hashing and Spiral Storage. Finally, the thesis presents Gray counters, close to bit-flip optimal counters that even enable age- based wear leveling with counters managed by the Non-Volatile Random Access Memories themselves instead of by the Operating Systems