18,544 research outputs found

    Phononics: Manipulating heat flow with electronic analogs and beyond

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    The form of energy termed heat that typically derives from lattice vibrations, i.e. the phonons, is usually considered as waste energy and, moreover, deleterious to information processing. However, with this colloquium, we attempt to rebut this common view: By use of tailored models we demonstrate that phonons can be manipulated like electrons and photons can, thus enabling controlled heat transport. Moreover, we explain that phonons can be put to beneficial use to carry and process information. In a first part we present ways to control heat transport and how to process information for physical systems which are driven by a temperature bias. Particularly, we put forward the toolkit of familiar electronic analogs for exercising phononics; i.e. phononic devices which act as thermal diodes, thermal transistors, thermal logic gates and thermal memories, etc.. These concepts are then put to work to transport, control and rectify heat in physical realistic nanosystems by devising practical designs of hybrid nanostructures that permit the operation of functional phononic devices and, as well, report first experimental realizations. Next, we discuss yet richer possibilities to manipulate heat flow by use of time varying thermal bath temperatures or various other external fields. These give rise to a plenty of intriguing phononic nonequilibrium phenomena as for example the directed shuttling of heat, a geometrical phase induced heat pumping, or the phonon Hall effect, that all may find its way into operation with electronic analogs.Comment: 24 pages, 16 figures, modified title and revised, accepted for publication in Rev. Mod. Phy

    Schottky nanocontacts on ZnO nanorod arrays

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    We report on fabrication and electrical characteristics of ZnO nanorod Schottky diode arrays. High quality ZnO nanorods were grown for the fabrication of the Schottky diodes using noncatalytic metalorganic vapor phase epitaxy and Au was evaporated on the tips of the vertically well-aligned ZnO nanorods. I-V characteristics of both bare ZnO and Au/ZnO heterostructure nanorod arrays were measured using current-sensing atomic force microscopy. Although both nanorods exhibited nonlinear and asymmetric I-V characteristic curves, Au/ZnO heterostructure nanorods demonstrated much improved electrical characteristics: the reverse-bias breakdown voltage was improved from -3 to -8 V by capping a Au layer on the nanorod tips. The origin of the enhanced electrical characteristics for the heterostructure nanorods is suggested. (C) 2003 American Institute of Physics.X11326sciescopu

    Large-signal model of the Metal-Insulator-Graphene diode targeting RF applications

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    We present a circuit-design compatible large-signal compact model of metal-insulator-graphene (MIG) diodes for describing its dynamic response for the first time. The model essentially consists of a voltage-dependent diode intrinsic capacitance coupled with a static voltage-dependent current source, the latter accounts for the vertical electron transport from/towards graphene, which has been modeled by means of the Dirac-thermionic electron transport theory through the insulator barrier. Importantly, the image force effect has been found to play a key role in determining the barrier height, so it has been incorporated into the model accordingly. The resulting model has been implemented in Verilog A to be used in existing circuit simulators and benchmarked against an experimental 6-nm TiO2 barrier MIG diode working as a power detector.Comment: 4 pages, 5 figures, 1 tabl

    Nanoscale Torsional Optomechanics

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    Optomechanical transduction is demonstrated for nanoscale torsional resonators evanescently coupled to optical microdisk whispering gallery mode resonators. The on-chip, integrated devices are measured using a fully fiber-based system, including a tapered and dimpled optical fiber probe. With a thermomechanically calibrated optomechanical noise floor down to 7 fm/sqrt(Hz), these devices open the door for a wide range of physical measurements involving extremely small torques, as little as 4x10^-20 N*m.Comment: 4 pages, 4 figures - Accepted to APL Oct 22nd, 2012. To appear in February 4th issue - as cover articl

    Near-field electrospinning of conjugated polymer light-emitting nanofibers

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    The authors report on the realization of ordered arrays of light-emitting conjugated polymer nanofibers by near-field electrospinning. The fibers, made by poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], have diameters of few hundreds of nanometers and emission peaked at 560 nm. The observed blue-shift compared to the emission from reference films is attributed to different polymer packing in the nanostructures. Optical confinement in the fibers is also analyzed through self-waveguided emission. These results open interesting perspectives for realizing complex and ordered architectures by light-emitting nanofibers, such as photonic circuits, and for the precise positioning and integration of conjugated polymer fibers into light-emitting devices.Comment: 11 pages, 6 figures Nanoscale, 201

    Enhancing fluorescence excitation and collection from the nitrogen-vacancy center in diamond through a micro-concave mirror

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    We experimentally demonstrate a simple and robust optical fibers based method to achieve simultaneously efficient excitation and fluorescence collection from Nitrogen-Vacancy (NV) defects containing micro-crystalline diamond. We fabricate a suitable micro-concave (MC) mirror that focuses scattered excitation laser light into the diamond located at the focal point of the mirror. At the same instance, the mirror also couples the fluorescence light exiting out of the diamond crystal in the opposite direction of the optical fiber back into the optical fiber within its light acceptance cone. This part of fluorescence would have been otherwise lost from reaching the detector. Our proof-of-principle demonstration achieves a 25 times improvement in fluorescence collection compared to the case of not using any mirrors. The increase in light collection favors getting high signal-to-noise ratio (SNR) optically detected magnetic resonance (ODMR) signals hence offers a practical advantage in fiber-based NV quantum sensors. Additionally, we compacted the NV sensor system by replacing some bulky optical elements in the optical path with a 1x2 fiber optical coupler in our optical system. This reduces the complexity of the system and provides portability and robustness needed for applications like magnetic endoscopy and remote-magnetic sensing.Comment: 6 pages, 8 figure

    Single photon emission and detection at the nanoscale utilizing semiconductor nanowires

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    We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by electrical injection of electrons and holes. The optical quality of the quantum dot emission is shown to improve when surrounding the dot material by a small intrinsic section of InP. Finally, we report large multiplication factors in excess of 1000 from a single Si nanowire avalanche photodiode comprised of p-doped, intrinsic, and n-doped sections. The large multiplication factor obtained from a single Si nanowire opens up the possibility to detect a single photon at the nanoscale.Comment: 11 pages, 7 figure

    Heterojunction Hybrid Devices from Vapor Phase Grown MoS2_{2}

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    We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS2_{2}) layer transferred onto p-type silicon. The fabrication is scalable as the MoS2_{2} is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS2_{2} layer. The diodes have a broad spectral response due to direct and indirect band transitions of the nanoscale MoS2_{2}. Further, we observe a blue-shift of the spectral response into the visible range. The results are a significant step towards scalable fabrication of vertical devices from two-dimensional materials and constitute a new paradigm for materials engineering.Comment: 23 pages with 4 figures. This article has been published in Scientific Reports. (26 June 2014, doi:10.1038/srep05458
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