Nonpropulsive applications of ion beams

Eight centimeter ion beam sources utilizing xenon and argon have been developed that operate over a wide range of beam energies and currents. Three types of processes have been studied: sputter deposition, ion beam machining, and ion beam surface texturing. The broad range of source operating conditions allows optimum sputter deposition of various materials. An ion beam source was used to ion mill laser reflection holograms using photoresist patterns on silicon. Ion beam texturing was tried with many materials and has a multitude of potential applications

Is keV ion induced pattern formation on Si(001) caused by metal impurities?

We present ion beam erosion experiments performed in ultra high vacuum using a differentially pumped ion source and taking care that the ion beam hits the Si(001) sample only. Under these conditions no ion beam patterns form on Si for angles below 45 degrees with respect to the global surface normal using 2 keV Kr ions and fluences of 2 x 10^22 ions/m^2. In fact, the ion beam induces a smoothening of preformed patterns. Simultaneous sputter deposition of stainless steel in this angular range creates a variety of patterns, similar to those previously ascribed to clean ion beam induced destabilization of the surface profile. Only for grazing incidence with incident angles between 60 degrees and 83 degrees pronounced ion beam patterns form. It appears that the angular dependent stability of Si(001) against pattern formation under clean ion beam erosion conditions is related to the angular dependence of the sputtering yield, and not primarily to a curvature dependent yield as invoked frequently in continuum theory models.Comment: 15 pages, 7 figures. This is an author-created, un-copyedited version of an article published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from i

Ion-beam-assisted fabrication and manipulation of metallic nanowires

Metallic nanowires (NWs) are the key performers for future micro/nanodevices. The controlled manoeuvring and integration of such nanoscale entities are essential requirements. Presented is a discussion of a fabrication approach that combines chemical etching and ion beam milling to fabricate metallic NWs. The shape modification of the metallic NWs using ion beam irradiation (bending towards the ion beam side) is investigated. The bending effect of the NWs is observed to be instantaneous and permanent. The ion beam-assisted shape manoeuvre of the metallic structures is studied in the light of ion-induced vacancy formation and reconfiguration of the damaged layers. The manipulation method can be used for fabricating structures of desired shapes and aligning structures at a large scale. The controlled bending method of the metallic NWs also provides an understanding of the strain formation process in nanoscale metals

Ion beam sputtering of fluoropolymers

Ion beam sputter processing rates as well as pertinent characteristics of etched targets and films are described. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Sputter target and film characteristics documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs are included

Ion beam sputter etching and deposition of fluoropolymers

Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE

A heavy ion beam probe system for investigation of a modified Penning discharge

An ion beam probe diagnostic system can measure time- and space-resolved profiles of plasma space potential and electron density. In combination with a computer iterative technique, the ion beam probe can determine both the space potential profile in plasmas containing strong electric fields and potentials comparable in magnitude to the energy of the probing ion beam. During ion beam probing of a modified Penning discharge, several groups of secondary ions were observed coming from the plasma with a fixed primary beam energy and momentum. The energies of these ions were within 10 percent of the values predicted by a computer-generated model of the potential profile in the plasma. The mechanical and electronic components of the system are described, with particular emphasis on those features required to probe plasma potentials comparable in magnitude to the ion beam energy

Oxidation protection coatings for polymers

A polymeric substrate is coated with a metal oxide film to provide oxidation protection in low Earth orbital environments. The film contains about 4 volume percent polymer to provide flexibility. A coil of polymer material moves through an ion beam as it is fed between reels. The ion beam first cleans the polymer material surface and then sputters the film material from a target onto this surface

Direct magneto-optical compression of an effusive atomic beam for high-resolution focused ion beam application

An atomic rubidium beam formed in a 70 mm long two-dimensional magneto-optical trap (2D MOT), directly loaded from a collimated Knudsen source, is analyzed using laser-induced fluorescence. The longitudinal velocity distribution, the transverse temperature and the flux of the atomic beam are reported. The equivalent transverse reduced brightness of an ion beam with similar properties as the atomic beam is calculated because the beam is developed to be photoionized and applied in a focused ion beam. In a single two-dimensional magneto-optical trapping step an equivalent transverse reduced brightness of $(1.0\substack{+0.8-0.4})$ $\times 10^6$ A/(m$^2$ sr eV) was achieved with a beam flux equivalent to $(0.6\substack{+0.3-0.2})$ nA. The temperature of the beam is further reduced with an optical molasses after the 2D MOT. This increased the equivalent brightness to $(6\substack{+5-2})$$\times 10^6$ A/(m$^2$ sr eV). For currents below 10 pA, for which disorder-induced heating can be suppressed, this number is also a good estimate of the ion beam brightness that can be expected. Such an ion beam brightness would be a six times improvement over the liquid metal ion source and could improve the resolution in focused ion beam nanofabrication.Comment: 10 pages, 8 figures, 1 tabl