1,889 research outputs found
HALLS: An Energy-Efficient Highly Adaptable Last Level STT-RAM Cache for Multicore Systems
Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising
alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility,
low leakage power, high density, and fast read speed. The STT-RAM's small
feature size is particularly desirable for the last-level cache (LLC), which
typically consumes a large area of silicon die. However, long write latency and
high write energy still remain challenges of implementing STT-RAMs in the CPU
cache. An increasingly popular method for addressing this challenge involves
trading off the non-volatility for reduced write speed and write energy by
relaxing the STT-RAM's data retention time. However, in order to maximize
energy saving potential, the cache configurations, including STT-RAM's
retention time, must be dynamically adapted to executing applications' variable
memory needs. In this paper, we propose a highly adaptable last level STT-RAM
cache (HALLS) that allows the LLC configurations and retention time to be
adapted to applications' runtime execution requirements. We also propose
low-overhead runtime tuning algorithms to dynamically determine the best
(lowest energy) cache configurations and retention times for executing
applications. Compared to prior work, HALLS reduced the average energy
consumption by 60.57% in a quad-core system, while introducing marginal latency
overhead.Comment: To Appear on IEEE Transactions on Computers (TC
Multi-port Memory Design for Advanced Computer Architectures
In this thesis, we describe and evaluate novel memory designs for multi-port on-chip and off-chip use in advanced computer architectures. We focus on combining multi-porting and evaluating the performance over a range of design parameters. Multi-porting is essential for caches and shared-data systems, especially multi-core System-on-chips (SOC). It can significantly increase the memory access throughput. We evaluate FinFET voltage-mode multi-port SRAM cells using different metrics including leakage current, static noise margin and read/write performance. Simulation results show that single-ended multi-port FinFET SRAMs with isolated read ports offer improved read stability and flexibility over classical double-ended structures at the expense of write performance. By increasing the size of the
access transistors, we show that the single-ended multi-port structures can achieve equivalent write performance to the classical double-ended multi-port structure for 9% area overhead. Moreover, compared with CMOS SRAM, FinFET SRAM has better stability and standby power. We also describe new methods for the design of FinFET current-mode multi-port
SRAM cells. Current-mode SRAMs avoid the full-swing of the bitline, reducing dynamic power and access time. However, that comes at the cost of voltage drop, which compromises
stability. The design proposed in this thesis utilizes the feature of Independent Gate (IG) mode FinFET, which can leverage threshold voltage by controlling the back gate voltage, to merge two transistors into one through high-Vt and low-Vt transistors. This design not only reduces the voltage drop, but it also reduces the area in multi-port current-mode SRAM design. For off-chip memory, we propose a novel two-port 1-read, 1-write (1R1W) phasechange memory (PCM) cell, which significantly reduces the probability of blocking at the bank levels. Different from the traditional PCM cell, the access transistors are at the top and connected to the bitline. We use Verilog-A to model the behavior of Ge2Sb2Te5 (GST: the storage component). We evaluate the performance of the two-port cell by transistor
sizing and voltage pumping. Simulation results show that pMOS transistor is more practical than nMOS transistor as the access device when both area and power are considered. The estimated area overhead is 1.7�, compared to single-port PCM cell. In brief, the contribution we make in this thesis is that we propose and evaluate three different kinds of multi-port memories that are favorable for advanced computer architectures
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