An Overview of Fully Integrated Switching Power Converters Based on Switched-Capacitor versus Inductive Approach and Their Advanced Control Aspects

This paper reviews and discusses the state of the art of integrated switched-capacitor and integrated inductive power converters and provides a perspective on progress towards the realization of efficient and fully integrated DC–DC power conversion. A comparative assessment has been presented to review the salient features in the utilization of transistor technology between the switched-capacitor and switched inductor converter-based approaches. First, applications that drive the need for integrated switching power converters are introduced, and further implementation issues to be addressed also are discussed. Second, different control and modulation strategies applied to integrated switched-capacitor (voltage conversion ratio control, duty cycle control, switching frequency modulation, Ron modulation, and series low drop out) and inductive converters (pulse width modulation and pulse frequency modulation) are then discussed. Finally, a complete set of integrated power converters are related in terms of their conditions and operation metrics, thereby allowing a categorization to provide the suitability of converter technologies

Per-Core DVFS with Switched-Capacitor Converters for Energy Efficiency in Manycore Processors

Integrating multiple power converters on-chip improves energy efficiency of manycore architectures. Switched-capacitor (SC) dc-dc converters are compatible with conventional CMOS processes, but traditional implementations suffer from limited conversion efficiency. We propose a dynamic voltage and frequency scaling scheme with SC converters that achieves high converter efficiency by allowing the output voltage to ripple and having the processor core frequency track the ripple. Minimum core energy is achieved by hopping between different converter modes and tuning body-bias voltages. A multicore processor model based on a 28-nm technology shows conversion efficiencies of 90% along with over 25% improvement in the overall chip energy efficiency

Transistor-Level Synthesis of Pipeline Analog-to-Digital Converters Using a Design-Space Reduction Algorithm

A novel transistor-level synthesis procedure for pipeline ADCs is presented. This procedure is able to directly map high-level converter specifications onto transistor sizes and biasing conditions. It is based on the combination of behavioral models for performance evaluation, optimization routines to minimize the power and area consumption of the circuit solution, and an algorithm to efficiently constraint the converter design space. This algorithm precludes the cost of lengthy bottom-up verifications and speeds up the synthesis task. The approach is herein demonstrated via the design of a 0.13 μm CMOS 10 bits@60 MS/s pipeline ADC with energy consumption per conversion of only 0.54 pJ@1 MHz, making it one of the most energy-efficient 10-bit video-rate pipeline ADCs reported to date. The computational cost of this design is of only 25 min of CPU time, and includes the evaluation of 13 different pipeline architectures potentially feasible for the targeted specifications. The optimum design derived from the synthesis procedure has been fine tuned to support PVT variations, laid out together with other auxiliary blocks, and fabricated. The experimental results show a power consumption of 23 [email protected] V and an effective resolution of 9.47-bit@1 MHz. Bearing in mind that no specific power reduction strategy has been applied; the mentioned results confirm the reliability of the proposed approach.Ministerio de Ciencia e Innovación TEC2009-08447Junta de Andalucía TIC-0281

Merged Two-Stage Power Converter With Soft Charging Switched-Capacitor Stage in 180 nm CMOS

In this paper, we introduce a merged two-stage dc-dc power converter for low-voltage power delivery. By separating the transformation and regulation function of a dc-dc power converter into two stages, both large voltage transformation and high switching frequency can be achieved. We show how the switched-capacitor stage can operate under soft charging conditions by suitable control and integration (merging) of the two stages. This mode of operation enables improved efficiency and/or power density in the switched-capacitor stage. A 5-to-1 V, 0.8 W integrated dc-dc converter has been developed in 180 nm CMOS. The converter achieves a peak efficiency of 81%, with a regulation stage switching frequency of 10 MHz.Interconnect Focus Center (United States. Defense Advanced Research Projects Agency and Semiconductor Research Corporation

Efficiency Comparison of Inductor-, Capacitor- and Resonant-based Converters Fully Integrated in CMOS Technology

International audienceThe full integration of DC-DC converters offers great promise for dramatic reduction in power consumption and the number of board-level components in complex systems on chip. Some papers compare the numerous published on-chip and on-die converter structures, but there is the need for an approach to accurately compare the main basic DC-DC conversion topologies. Therefore, this paper presents a method to compare the efficiencies of CMOS integrated capacitive-, inductive-and resonant-based switching converters. The loss mechanism of each structure in hard-switching conditions is detailed and the analytical equations of the power loss and output voltage are given as a function of few CMOS technology parameters. The resulting models can be used to accurately predict converter efficiency in the early design phase, to compare the basic structure in particular the technology node or to orient the passive choice. The proposed method is then applied to design, optimize and compare fully-integrated power delivery requirements on a 1mm 2 on-die area in 65nm CMOS technology over three decades of power density. The results also underline the high efficiency of the promising resonant-based converter. Index Terms—integrated switching power supply, on-chip voltage regulator, switched-capacitor converter, inductive power converter, resonant converte

Miniaturized Low-Voltage Power Converters With Fast Dynamic Response

This paper demonstrates a two-stage approach for power conversion that combines the strengths of variable-topology switched capacitor techniques (small size and light-load performance) with the regulation capability of magnetic switch-mode power converters. The proposed approach takes advantage of the characteristics of complementary metal-oxide-semiconductor (CMOS) processes, and the resulting designs provide excellent efficiency and power density for low-voltage power conversion. These power converters can provide low-voltage outputs over a wide input voltage range with very fast dynamic response. Both design and fabrication considerations for highly integrated CMOS power converters using this architecture are addressed. The results are demonstrated in a 2.4-W dc-dc converter implemented in a 180-nm CMOS IC process and co-packaged with its passive components for high performance. The power converter operates from an input voltage of 2.7-5.5 V with an output voltage of ≤1.2 V, and achieves a 2210 W/in[superscript 3] power density with ≥80% efficiency.Focus Center Research ProgramUnited States. Defense Advanced Research Projects AgencySemiconductor Research CorporationCharles Stark Draper Laborator

Design Methologies for Integrated Inductor-Based Soft-Switching DC DC Converters

This paper presents a study on resonant converter topologies targeted for CMOS integration. Design methodologies to optimize efficiency for the integration of Quasi-Resonant and Quasi-Square-Wave converters are proposed. A power loss model is used to optimize the design parameters of the power stage, including the driver circuits, and also to conclude about CMOS technology limitations. Based on this discussion, and taking as reference a 0.35μm CMOS process, two converters are designed to validate the proposal: a Quasi Resonant boost converter operating at 100MHz and a Quasi-Square-Wave buck converter operating at 70MHz. Simulation results confirm the feasibility of these topologies for monolithic integration

Integrated high-voltage switched-capacitor DC-DC converters

The focus of this work is on the integrated circuit (IC) level integration of high-voltage switched-capacitor (SC) converters with the goal of fully integrated power management solutions for system-on-chip (SoC) and system-in-pagage (SiP) applications. The full integration of SC converters provides a low cost and compact power supply solution for modern electronics. Currently, there are almost no fully integrated SC converters with input voltages above 5 V. The purpose of this work is to provide solutions for higher input voltages. The increasing challenges of a compact and efficient power supply on the chip are addressed. High-voltage rated components and the increased losses caused by parasitics not only reduce power density but also efficiency. Loss mechanisms in high-voltage SC converters are investigated resulting in an optimized model for high-voltage SC converters. The model developed allows an appropriate comparison of different semiconductor technologies and converter topologies. Methods and design proposals for loss reduction are presented. Control of power switches with their supporting circuits is a further challenge for high-voltage SC converters. The aim of this work is to develop fully integrated SC converters with a wide input voltage range. Different topologies and concepts are investigated. The implemented fully integrated SC converter has an input voltage range of 2 V to 13 V. This is twice the range of existing converters. This is achieved by an implemented buck and boost mode as well as 17 conversion ratios. Experimental results show a peak efficiency of 81.5%. This is the highest published peak efficiency for fully integrated SC converters with an input voltage > 5V. With the help of the model developed in this work, a three-phase SC converter topology for input voltages up to 60 V is derived and then investigated and discussed. Another focus of this work is on the power supply of sensor nodes and smart home applications with low-power consumption. Highly integrated micro power supplies that operate directly from mains voltage are particularly suitable for these applications. The micro power supply proposed in this work utilizes the high-voltage SC converter developed. The output power is 14 times higher and the power density eleven times higher than prior work. Since plenty of power switches are built into modern multi-ratio SC converters, the switch control circuits must be optimized with regard to low-power consumption and area requirements. In this work, different level shifter concepts are investigated and a low-power high-voltage level shifter for 50 V applications based on a capacitive level shifter is introduced. The level shifter developed exceeds the state of the art by a factor of more than eleven with a power consumption of 2.1pJ per transition. A propagation delay of 1.45 ns is achieved. The presented high-voltage level shifter is the first level shifter for 50 V applications with a propagation delay below 2 ns and power consumption below 20pJ per transition. Compared to the state of the art, the figure of merit is significantly improved by a factor of two. Furthermore, various charge pump concepts are investigated and evaluated within the context of this work. The charge pump, optimized in this work, improves the state of the art by a factor of 1.6 in terms of efficiency. Bidirectional switches must be implemented at certain locations within the power stage to prevent reverse conduction. The topology of a bidirectional switch developed in this work reduces the dynamic switching losses by 70% and the area consumption including the required charge pumps by up to 65% compared to the state of the art. These improvements make it possible to control the power switches in a fast and efficient way. Index terms — integrated power management, high input voltage, multi-ratio SC converter, level shifter, bidirectional switch, micro power supplyDer Schwerpunkt dieser Arbeit liegt auf der Erforschung von Switched-Capacitor (SC) Spannungswandler für höhere Eingangsspannungen. Ziel der Arbeit ist es Lösungen für ein voll auf dem Halbleiterchip integriertes Power Management anzubieten um System on Chip (SoC) und System in Package (SiP) zu ermöglichen. Die vollständige Integration von SC Spannungswandlern bietet eine kostengünstige und kompakte Spannungsversorgungslösung für moderne Elektronik. Der kontinuierliche Trend hin zu immer kompakterer Elektronik und hin zu höheren Versorgungsspannungen wird in dieser Arbeit adressiert. Aktuell gibt es sehr wenige voll integrierte SC Spannungswandler mit einer Eingangsspannung größer 5 V. Die mit steigender Spannung zunehmenden Herausforderungen an eine kompakte und effiziente Spannungsversorgung auf dem Chip werden in dieser Arbeit untersucht. Die höhere Spannungsfestigkeit der verwendeten Komponenten korreliert mit erhöhten Verlusten und erhöhtem Flächenverbrauch, welche sich negativ auf den Wirkungsgrad und die Leistungsdichte von SC Spannungswandlern auswirkt. Bestandteil dieser Arbeit ist die Untersuchung dieser Verlustmechanismen und die Entwicklung eines Modells, welches speziell für höhere Spannungen optimiert wurde. Das vorgestellte Modell ermöglicht zum einen die optimale Dimensionierung der Spannungswandler und zum anderen faire Vergleichsmöglichkeiten zwischen verschiedenen SC Spannungswandler Architekturen und Halbleitertechnologien. Demnach haben sowohl die gewählte Architektur und Halbleitertechnologie als auch die Kombination aus gewählter Architektur und Technologie erheblichen Einfluss auf die Leistungsfähigkeit der Spannungswandler. Ziel dieser Arbeit ist die Vollintegration eines SC Spannungswandlers mit einem weiten und hohen Eingangsspannungsbereich zu entwickeln. Dazu wurden verschiedene Schaltungsarchitekturen und Konzepte untersucht. Der vorgestellte vollintegrierte SC Spannungswandler weist einen Eingangsspannungsbereich von 2 V bis 13 V auf. Dies ist eine Verdopplung im Vergleich zum Stand der Technik. Dies wird durch einen implementierten Auf- und Abwärtswandler-Betriebsmodus sowie 17 Übersetzungsverhältnisse erreicht. Experimentelle Ergebnisse zeigen einen Spitzenwirkungsgrad von 81.5%. Dies ist der höchste veröffentlichte Spitzenwirkungsgrad für vollintegrierte SC Spannungswandler mit einer Eingangsspannung größer 5 V. Mit Hilfe des in dieser Arbeit entwickelten Modells wird eine dreiphasige SC Spannungswandler Architektur für Eingangsspannungen bis zu 60 V entwickelt und anschließend analysiert und diskutiert. Ein weiterer Schwerpunkt dieser Arbeit adressiert die kompakte Spannungsversorgung von Sensorknoten mit geringem Stromverbrauch, für Anwendungen wie Smart Home und Internet der Dinge (IoT). Für diese Anwendungen eignen sich besonders gut hochintegrierte Mikro-Netzteile, welche direkt mit dem 230VRMS-Hausnetz (bzw. 110VRMS) betrieben werden können. Das in dieser Arbeit vorgestellte Mikro-Netzteil nutzt einen in dieser Arbeit entwickelten SC Spannungswandler für hohe Eingangsspannungen. Die damit erzielte Ausgangsleistung ist 14-mal größer im Vergleich zum Stand der Technik. In SC Spannungswandlern für hohe Spannungen werden viele Leistungsschalter benötigt, deshalb muss bei der Schalteransteuerung besonders auf einen geringen Leistungsverbrauch und Flächenbedarf der benötigten Schaltungsblöcke geachtet werden. Gegenstand dieser Arbeit ist sowohl die Analyse verschiedener Konzepte für Pegelumsetzer, als auch die Entwicklung eines stromsparenden Pegelumsetzers für 50 V-Anwendungen. Mit einer Leistungsaufnahme von 2.1pJ pro Signalübergang reduziert der entwickelte Pegelumsetzer mit kapazitiver Kopplung um mehr als elfmal die Leistungsaufnahme im Vergleich zum Stand der Technik. Die erreichte Laufzeitverzögerung beträgt 1.45 ns. Damit erzielt der vorgestellte Hochspannungs-Pegelumsetzer als erster Pegelumsetzer für 50 V-Anwendungen eine Laufzeitverzögerung unter 2 ns und eine Leistungsaufnahme unter 20pJ pro Signalwechsel. Im Vergleich zum Stand der Technik wird die Leistungskennzahl um den Faktor zwei deutlich verbessert. Darüber hinaus werden im Rahmen dieser Arbeiten verschiedene Ladungspumpenkonzepte untersucht und bewertet. Die in dieser Arbeit optimierte Ladungspumpe verbessert den Stand der Technik um den Faktor 1.6 in Bezug auf den Wirkungsgrad. Die in dieser Arbeit entwickelte Schaltungsarchitektur eines bidirektionalen Schalters reduziert die dynamischen Schaltverluste um 70% und den benötigten Flächenbedarf inklusive der benötigten Ladungspumpe um bis zu 65% gegenüber dem Stand der Technik. Diese Verbesserungen ermöglichen es, die Leistungsschalter schnell und effizient anzusteuern. Schlagworte — Integriertes Powermanagement, hohe Eingangsspannung, Multi-Ratio SC Spannungswan- dler, Pegelumsetzer, bidirektionaler Schalter, Mikro-Netztei

3D ICs: An Opportunity for Fully-Integrated, Dense and Efficient Power Supplies

International audienceWith 3D technologies, the in-package solution allows integrated, efficient and granular power supplies to be designed for multi-core processors. As the converter design obtains few benefits from the scaling, 3DIC allows the best technology to be chosen i.e. one which suits the DC-DC converter design. This paper evaluates the achievable power efficiency between on-die and in-package converters using a combination of active (28 and 65nm CMOS nodes) and passive (poly, MIM, vertical capacitor) layers. Based on the same load power consumption, on-die and in-package switched capacitor converters achieve 65% and 78% efficiency, respectively, in a 1mm 2 silicon area. An additional high density capacitance layer (100nF/mm 2) improves efficiency by more than 20 points in 65nm for the same surface which emphasizes the need for dedicated technology for better power management integration. This paper shows that in-package power management is a key alternative for fully-integrated, dense and efficient power supplies

A RISC-V Vector Processor With Simultaneous-Switching Switched-Capacitor DC-DC Converters in 28 nm FDSOI

This work demonstrates a RISC-V vector microprocessor implemented in 28 nm FDSOI with fully integrated simultaneous-switching switched-capacitor DC-DC (SC DC-DC) converters and adaptive clocking that generates four on-chip voltages between 0.45 and 1 V using only 1.0 V core and 1.8 V IO voltage inputs. The converters achieve high efficiency at the system level by switching simultaneously to avoid charge-sharing losses and by using an adaptive clock to maximize performance for the resulting voltage ripple. Details about the implementation of the DC-DC switches, DC-DC controller, and adaptive clock are provided, and the sources of conversion loss are analyzed based on measured results. This system pushes the capabilities of dynamic voltage scaling by enabling fast transitions (20 ns), simple packaging (no off-chip passives), low area overhead (16%), high conversion efficiency (80%-86%), and high energy efficiency (26.2 DP GFLOPS/W) for mobile devices