AlN/GaN-based MOS-HEMT technology: processing and device results

Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using the following techniques: (1) Ohmic contact optimisation using Al wet etch prior to Ohmic metal deposition and (2) mesa sidewall passivation. DC and RF performance of the fabricated devices will be presented and discussed in this paper

A cryogenic amplifier for fast real-time detection of single-electron tunneling

We employ a cryogenic High Electron Mobility Transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1K and the circuit has a bandwidth of 1 MHz. The noise contribution of the HEMT at high frequencies is only a few times higher than that of the QPC shot noise. We use this setup to monitor single-electron tunneling to and from an adjacent quantum dot and we measure fluctuations in the dot occupation as short as 400 nanoseconds, 20 times faster than in previous work.Comment: 4 pages, 3 figure

On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field

The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. We observed that an InP HEMT 0.3-14GHz LNA at 2K, where the in-going transistors were oriented perpendicular to a magnetic field, heavily degraded in gain and average noise temperature already up to 1.5T. Dc measurements for InP HEMTs at 2K revealed a strong reduction in the transistor output current as a function of static magnetic field up to 14T. In contrast, the current reduction was insignificant when the InP HEMT was oriented parallel to the magnetic field. Given the transistor layout with large gate width/gate length ratio, the results suggest a strong geometrical magnetoresistance effect occurring in the InP HEMT. This was confirmed in the angular dependence of the transistor output current with respect to the magnetic field. Key device parameters such as transconductance and on-resistance were significantly affected at small angles and magnetic fields. The strong angular dependence of the InP HEMT output current in a magnetic field has important implications for the alignment of cryogenic LNAs in microwave detection experiments involving magnetic fields

A SiGe HEMT Mixer IC with Low Conversion Loss

The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating up to 10GHz RF, has been designed and realized using a 0.1µ µµ µm gate length transistor technology. The design is based on a new large-signal simulation model developed for the SiGe HEMT. Good agreement between simulation and measurement is reached. The mixer exhibits 4.0dB and 4.7dB conversion loss when down-converting 3.0GHz and 6.0GHz signals, respectively, to an intermediate frequency of 500MHz using high-side injection of 5dBm local oscillator power. Conversion loss is less than 8dB for RF frequencies up to 10GHz with a mixer linearity of –8.8dBm input related 1dB compression point

Gain Stabilization of a Submillimeter SIS Heterodyne Receiver

We have designed a system to stabilize the gain of a submillimeter heterodyne receiver against thermal fluctuations of the mixing element. In the most sensitive heterodyne receivers, the mixer is usually cooled to 4 K using a closed-cycle cryocooler, which can introduce ~1% fluctuations in the physical temperature of the receiver components. We compensate for the resulting mixer conversion gain fluctuations by monitoring the physical temperature of the mixer and adjusting the gain of the intermediate frequency (IF) amplifier that immediately follows the mixer. This IF power stabilization scheme, developed for use at the Submillimeter Array (SMA), a submillimeter interferometer telescope on Mauna Kea in Hawaii, routinely achieves a receiver gain stability of 1 part in 6,000 (rms to mean). This is an order of magnitude improvement over the typical uncorrected stability of 1 part in a few hundred. Our gain stabilization scheme is a useful addition to SIS heterodyne receivers that are cooled using closed-cycle cryocoolers in which the 4 K temperature fluctuations tend to be the leading cause of IF power fluctuations.Comment: 7 pages, 6 figures accepted to IEEE Transactions on Microwave Theory and Technique

Strongly quadrature-dependent noise in superconducting micro-resonators measured at the vacuum-noise limit

We measure frequency- and dissipation-quadrature noise in superconducting lithographed microwave resonators with sensitivity near the vacuum noise level using a Josephson parametric amplifier. At an excitation power of 100~nW, these resonators show significant frequency noise caused by two-level systems. No excess dissipation-quadrature noise (above the vacuum noise) is observed to our measurement sensitivity. These measurements demonstrate that the excess dissipation-quadrature noise is negligible compared to vacuum fluctuations, at typical readout powers used in micro-resonator applications. Our results have important implications for resonant readout of various devices such as detectors, qubits and nano-mechanical oscillators.Comment: 13 pages, 4 figure

Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency f_T of 440 GHz for millimeterwave imaging receivers applications

The 50 nm m-HEMT exhibits extremely high f<sub>T</sub>, of 440GHz, low F<sub>min</sub> of 0.7 dB, associated gain of 13 dB at 26 GHz with an exceptionally high Id of 200 mA/mm and gm of 950 ms/mm at low noise biased point