Competitive segregation of gallium and indium at heterophase Cu–MnO interfaces studied with transmission electron microscopy

This paper concentrates on the possible segregation of indium and gallium and competitive segregation of gallium and indium at atomically flat parallel {111}-oriented Cu–MnO interfaces. The segregation of gallium at Cu–MnO interfaces after introduction of gallium in the copper matrix of internally oxidized Cu–1 at.%Mn could be hardly detected with energy-dispersive spectrometry in a field emission gun transmission electron microscope. After a heat treatment to dissolve indium in the copper matrix, gallium has a weak tendency to segregate, that is 2.5 at.% Ga per monolayer at the interface compared with 2 at.% in the copper matrix. The striking result is that this gallium segregation is observable because it does not occur at the metal side of the interface but in the first two monolayers at the oxide side. Using the same heat treatment as for introducing indium in the sample, but without indium present, gallium segregates strongly at the oxide side of the Cu–MnO interface with a concentration of about 14.3 at.% in each monolayer of the two. In contrast, the presence of gallium has no influence on the segregation of indium towards Cu–MnO interfaces, because the outermost monolayer at the metal side of the interface contains 17.6 at.% In, that is similar to previously found results. This leads to the intriguing conclusions, firstly, that, in contrast with antimony and indium, gallium segregates at the oxide side of the interface and, secondly, that the presence of indium strongly hampers gallium segregation. The results from analytical transmission electron microscopy on gallium segregation are supported by high-resolution transmission electron microscopy observations.

Whiskerless Schottky diode

A Schottky diode for millimeter and submillimeter wave applications is comprised of a multi-layered structure including active layers of gallium arsenide on a semi-insulating gallium arsenide substrate with first and second insulating layers of silicon dioxide on the active layers of gallium arsenide. An ohmic contact pad lays on the silicon dioxide layers. An anode is formed in a window which is in and through the silicon dioxide layers. An elongated contact finger extends from the pad to the anode and a trench, preferably a transverse channel or trench of predetermined width, is formed in the active layers of the diode structure under the contact finger. The channel extends through the active layers to or substantially to the interface of the semi-insulating gallium arsenide substrate and the adjacent gallium arsenide layer which constitutes a buffer layer. Such a structure minimizes the effect of the major source of shunt capacitance by interrupting the current path between the conductive layers beneath the anode contact pad and the ohmic contact. Other embodiments of the diode may substitute various insulating or semi-insulating materials for the silicon dioxide, various semi-conductors for the active layers of gallium arsenide, and other materials for the substrate, which may be insulating or semi-insulating

Preparation, structural characterisation and antibacterial properties of Ga-doped sol-gel phosphate-based glass

A sol-gel preparation of Ga-doped phosphate-based glass with potential application in antimicrobial devices has been developed. Samples of composition (CaO)(0.30)(Na2O)(0.20-x) (Ga2O3) (x) (P2O5)(0.50) where x = 0 and 0.03 were prepared, and the structure and properties of the gallium-doped sample compared with those of the sample containing no gallium. Analysis of the P-31 MAS NMR data demonstrated that addition of gallium to the sol-gel reaction increases the connectivity of the phosphate network at the expense of hydroxyl groups. This premise is supported by the results of the elemental analysis, which showed that the gallium-free sample contains significantly more hydrogen and by FTIR spectroscopy, which revealed a higher concentration of -OH groups in that sample. Ga K-edge extended X-ray absorption fine structure and X-ray absorption near-edge structure data revealed that the gallium ions are coordinated by six oxygen atoms. In agreement with the X-ray absorption data, the high-energy XRD results also suggest that the Ga3+ ions are octahedrally coordinated with respect to oxygen. Antimicrobial studies demonstrated that the sample containing Ga3+ ions had significant activity against Staphylococcus aureus compared to the control

Limits on nu_e and anti-nu_e disappearance from Gallium and reactor experiments

The deficit observed in the Gallium radioactive source experiments is interpreted as a possible indication of the disappearance of electron neutrinos. In the effective framework of two-neutrino mixing we obtain $\sin^{2}2\vartheta \gtrsim 0.03$ and $\Delta{m}^{2} \gtrsim 0.1 \text{eV}^{2}$. The compatibility of this result with the data of the Bugey and Chooz reactor short-baseline antineutrino disappearance experiments is studied. It is found that the Bugey data present a hint of neutrino oscillations with $0.02 \lesssim \sin^{2}2\vartheta \lesssim 0.08$ and $\Delta{m}^{2} \approx 1.8 \text{eV}^{2}$, which is compatible with the Gallium allowed region of the mixing parameters. This hint persists in the combined analyses of Bugey and Chooz data, of Gallium and Bugey data, and of Gallium, Bugey, and Chooz data.Comment: 21 pages. Final version to be published in Phys. Rev.

The BNO-LNGS joint measurement of the solar neutrino capture rate in 71Ga

We describe a cooperative measurement of the capture rate of solar neutrinos by the reaction 71Ga(\nu_e,e^-)71Ge. Extractions were made from a portion of the gallium target in the Russian-American Gallium Experiment SAGE and the extraction samples were transported to the Gran Sasso laboratory for synthesis and counting at the Gallium Neutrino Observatory GNO. Six extractions of this type were made and the resultant solar neutrino capture rate was 64 ^{+24}_{-22} SNU, which agrees well with the overall result of the gallium experiments. The major purpose of this experiment was to make it possible for SAGE to continue their regular schedule of monthly solar neutrino extractions without interruption while a separate experiment was underway to measure the response of 71Ga to neutrinos from an 37Ar source. As side benefits, this experiment proved the feasibility of long-distance sample transport in ultralow background radiochemical experiments and familiarized each group with the methods and techniques of the other.Comment: 7 pages, no figures; minor additions in version

Study of semiconductor heterojunctions of zinc selenide, gallium arsenide, and germanium

Fabrication and properties of gallium arsenide and zinc selenide junctions with germanium, and of gallium arsenide-zinc selenide heterojunction

Frequency doubling in Ga:La:S optical glass with microcrystals

Second harmonic generation in gallium-lanthanum-sulphide (Ga:La:S) and GeS2+Ga:La:S glasses is investigated. It is shown that microcrystals of Ga:La:S and of alpha-phase of gallium-sulphide (alpha-Ga2S3), whose presence in the glass matrix is revealed by x-ray diffraction analysis, are responsible for the frequency doubling process

Design and fabrication of a laser modulator Final report, Jul. 27 - Oct. 27, 1965

Laser modulator using gallium arsenide and gallium phosphide electro-optic crystal