Roadmap on semiconductor-cell biointerfaces.

This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world

The High-Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects

2010 marked the 30th anniversary of the High-Electron Mobility Transistor (HEMT). The HEMT represented a triumph for the, at the time, relatively new concept of bandgap engineering and nascent molecular beam epitaxy technology. The HEMT showcased the outstanding electron transport characteristics of two-dimensional electron gas (2DEG) systems in III-V compound semiconductors. In the last 30 years, HEMTs have been demonstrated in several material systems, most notably AlGaAs/GaAs and AlGaN/GaN. Their uniqueness in terms of noise, power and high frequency operation has propelled HEMTs to gain insertion in a variety of systems where they provide critical performance value. 2DEG systems have also been a boon in solid-state physics where new and often bizarre phenomena have been discovered. As we look forward, HEMTs are uniquely positioned to expand the reach of electronics in communications, signal processing, electrical power management and imaging. Some of the most exciting prospects in the near future for HEMT-like devices are those of GaN for high voltage power management and III-V CMOS to give a new lease on life to Moore’s Law. This paper briefly reviews some highlights of HEMT development in the last 30 years in engineering and science. It also speculates about potential future applications

Low-Temperature Solution-Processable Functional Oxide Materials for Printed Electronics

Over a decade since the first printed oxide transistor has been reported, printed oxide electronics is now becoming emerging technologies for realization of flexible, large-scale, low-cost electronic devices and systems. This chapter summarizes recent progress in the development of low-temperature solution-processable functional oxide materials and devices, and it also addresses critical challenges for the fundamental understanding and practical implementation of complex oxides in devices. The first part of this chapter gives an overview of the development of functional oxide inks such as semiconductors, conductors, and dielectrics. The second part discusses high-resolution printing technologies and some applications of printed electronics to exemplify their potential

Innovation Offshoring:Asia's Emerging Role in Global Innovation Networks

Most analysts agree that critical ingredients for economic growth, competitiveness, and welfare in the United States have been policies that encourage strong investment in research and development (R&D) and innovation. In addition, there is a general perception that technological innovation must be based in the United States to remain a pillar of the American economy. Over the past decade, however, the rise of Asia as an important location for "innovation offshoring" has begun to challenge these familiar notions. Based on original research, this report demonstrates that innovation offshoring is driven by profound changes in corporate innovation management as well as by the globalization of markets for technology and knowledge workers. U.S. companies are at the forefront of this trend, but Asian governments and firms are playing an increasingly active role as promoters and new sources of innovation. Innovation offshoring has created a competitive challenge of historic proportions for the United States, requiring the nation to respond with a new national strategy. This report recommends that such a strategy include the following elements: output forecasting techniques ... Improve access to and collection of innovation-related data to inform the national policy debate; Address "home-made" causes of innovation offshoring by sustaining and building upon existing strengths of the U.S. innovation system; Support corporate innovation by (1) providing tax incentives to spur early-state investments in innovation start-ups and (2) reforming the U.S. patent system so it is more accessible to smaller inventors and innovators; and Upgrade the U.S. talent pool of knowledge workers by (1) providing incentives to study science and engineering, (2) encouraging the development of management, interpretive, cross-cultural, and other "soft" capabilities, and (3) encouraging immigration of highly skilled workers.Innovation Networks, Innovation Offshoring, Asia

Enhanced and continuous electrostatic carrier doping on the SrTiO3_{3} surface

Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta$_{2}$O$_{5}$ hybrid gate insulator and fabricate FET devices on single-crystalline SrTiO$_{3}$, which has been regarded as a bedrock material for oxide electronics. The gate insulator accumulates up to $\sim10^{13}$cm$^{-2}$ carriers, while the field-effect mobility is kept at 10\,cm$^2$/Vs even at room temperature. Further to the exceptional performance of our devices, the enhanced compatibility of high carrier density and high mobility revealed the mechanism for the long standing puzzle of the distribution of electrostatically doped carriers on the surface of SrTiO$_{3}$. Namely, the formation and continuous evolution of field domains and current filaments.Comment: Supplementary Information: <http://www.nature.com/srep/2013/130424/srep01721/extref/srep01721-s1.pdf

Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives

The current research in graphene spintronics strives for achieving a long spin lifetime, and efficient spin injection and detection in graphene. In this article, we review how hexagonal boron nitride (hBN) has evolved as a crucial substrate, as an encapsulation layer, and as a tunnel barrier for manipulation and control of spin lifetimes and spin injection/detection polarizations in graphene spin valve devices. First, we give an overview of the challenges due to conventional SiO$_2$ substrate for spin transport in graphene followed by the progress made in hBN based graphene heterostructures. Then we discuss in detail the shortcomings and developments in using conventional oxide tunnel barriers for spin injection into graphene followed by introducing the recent advancements in using the crystalline single/bi/tri-layer hBN tunnel barriers for an improved spin injection and detection which also can facilitate two-terminal spin valve and Hanle measurements, at room temperature, and are of technological importance. A special case of bias induced spin polarization of contacts with exfoliated and chemical vapour deposition (CVD) grown hBN tunnel barriers is also discussed. Further, we give our perspectives on utilizing graphene-hBN heterostructures for future developments in graphene spintronics.Comment: Review, Author submitted manuscript - draft; 25 pages, 8 figure