Efficient Spatial Redistribution of Quantum Dot Spontaneous Emission from 2D Photonic Crystals

We investigate the modification of the spontaneous emission dynamics and external quantum efficiency for self-assembled InGaAs quantum dots coupled to extended and localised photonic states in GaAs 2D-photonic crystals. The 2D-photonic bandgap is shown to give rise to a 5-10 times enhancement of the external quantum efficiency whilst the spontaneous emission rate is simultaneously reduced by a comparable factor. Our findings are quantitatively explained by a modal redistribution of spontaneous emission due to the modified local density of photonic states. The results suggest that quantum dots embedded within 2D-photonic crystals are suitable for practical single photon sources with high external efficiency

External quantum efficiency enhancement by photon recycling with backscatter evasion

The nonunity quantum efficiency (QE) in photodiodes (PD) causes deterioration of signal quality in quantum optical experiments due to photocurrent loss as well as the introduction of vacuum fluctuations into the measurement. In this paper, we report that the external QE enhancement of a PD was demonstrated by recycling the reflected photons. The external QE for an InGaAs PD was increased by 0.01 - 0.06 from 0.86 - 0.92 over a wide range of incident angles. Moreover, we confirmed that this technique does not increase backscattered light when the recycled beam is properly misaligned

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells

We demonstrate enhanced external quantum efficiency and current-voltage characteristics due to scattering by 100 nm silver nanoparticles in a single 2.5 nm thick InGaN quantum well photovoltaic device. Nanoparticle arrays were fabricated on the surface of the device using an anodic alumina template masking process. The Ag nanoparticles increase light scattering, light trapping, and carrier collection in the III-N semiconductor layers leading to enhancement of the external quantum efficiency by up to 54%. Additionally, the short-circuit current in cells with 200 nm p-GaN emitter regions is increased by 6% under AM 1.5 illumination. AFORS-Het simulation software results were used to predict cell performance and optimize emitter layer thickness

30% external quantum efficiency from surface textured, thin-film light-emitting diodes

There is a significant gap between the internal efficiency of light-emitting diodes (LEDs) and their external efficiency. The reason for this shortfall is the narrow escape cone for light in high refractive index semiconductors. We have found that by separating thin-film LEDs from their substrates (by epitaxial lift-off, for example), it is much easier for light to escape from the LED structure and thereby avoid absorption. Moreover, by nanotexturing the thin-film surface using "natural lithography," the light ray dynamics becomes chaotic, and the optical phase-space distribution becomes "ergodic," allowing even more of the light to find the escape cone. We have demonstrated 30% external efficiency in GaAs LEDs employing these principles

High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate

A high-speed, high-responsivity GaAlAs/GaAs p-i-n photodiode has been fabricated on a GaAs semi-insulating substrate. The 75-µm-diam photodiode has a 3-dB bandwidth of 2.5 GHz and responsivity of 0.45 A/W at 8400 Å (external quantum efficiency of 65%). The diode is suitable for monolithic integration with other optoelectronic devices

Thin film solar cells based on the ternary compound Cu2SnS3

Alongside with Cu2ZnSnS4 and SnS, the p-type semiconductor Cu2SnS3 also consists of only Earth abundant and low-cost elements and shows comparable opto-electronic properties, with respect to Cu2ZnSnS4 and SnS, making it a promising candidate for photovoltaic applications of the future. In this work, the ternary compound has been produced via the annealing of an electrodeposited precursor in a sulfur and tin sulfide environment. The obtained absorber layer has been structurally investigated by X-ray diffraction and results indicate the crystal structure to be monoclinic. Its optical properties have been measured via photoluminescence, where an asymmetric peak at 0.95 eV has been found. The evaluation of the photoluminescence spectrum indicates a band gap of 0.93 eV which agrees well with the results from the external quantum efficiency. Furthermore, this semiconductor layer has been processed into a photovoltaic device with a power conversion efficiency of 0.54%, a short circuit current of 17.1 mA/cm2, an open circuit voltage of 104 mV hampered by a small shunt resistance, a fill factor of 30.4%, and a maximal external quantum efficiency of just less than 60%. In addition, the potential of this Cu2SnS3 absorber layer for photovoltaic applications is discussed

Modal properties of unstable resonator semiconductor lasers with a lateral waveguide

The modal properties of unstable resonator lasers with a lateral waveguide have been analyzed, and an unstable resonator semiconductor laser with a real index lateral waveguide has been demonstrated. Output powers in excess of 400 mW were observed with a stable, highly coherent lateral field distribution. The incorporation of a lateral real index waveguide with the unstable resonator configuration results in an increase in the external quantum efficiency and the appearance of ripples in the lateral field distribution

Unstable resonator cavity semiconductor lasers

GaAs heterostructure lasers with unstable resonator cavities were demonstrated for the first time with both curved mirrors fabricated by etching. Typical output powers of 0.35 W were observed in a stable, highly coherent lateral mode. The laser operated stably in a single longitudinal mode over a large range of injection currents. The external quantum efficiency was 70% of that of a similar laser with both mirror facets cleaved implying good output coupling of the energy from the entire region