MemZip: exploring unconventional benefits from memory compression

pre-printMemory compression has been proposed and deployed in the past to grow the capacity of a memory system and reduce page fault rates. Compression also has secondary benefits: it can reduce energy and bandwidth demands. However, most prior mechanisms have been designed to focus on the capacity metric and few prior works have attempted to explicitly reduce energy or bandwidth. Further, mechanisms that focus on the capacity metric also require complex logic to locate the requested data in memory. In this paper, we design a highly simple compressed memory architecture that does not target the capacity metric. Instead, it focuses on complexity, energy, bandwidth, and reliability. It relies on rank subsetting and a careful placement of compressed data and metadata to achieve these benefits. Further, the space made available via compression is used to boost other metrics - the space can be used to implement stronger error correction codes or energy-efficient data encodings. The best performing MemZip configuration yields a 45% performance improvement and 57% memory energy reduction, compared to an uncompressed non-sub-ranked baseline. Another energy-optimized configuration yields a 29.8% performance improvement and a 79% memory energy reduction, relative to the same baseline

Architectural Techniques to Enable Reliable and Scalable Memory Systems

High capacity and scalable memory systems play a vital role in enabling our desktops, smartphones, and pervasive technologies like Internet of Things (IoT). Unfortunately, memory systems are becoming increasingly prone to faults. This is because we rely on technology scaling to improve memory density, and at small feature sizes, memory cells tend to break easily. Today, memory reliability is seen as the key impediment towards using high-density devices, adopting new technologies, and even building the next Exascale supercomputer. To ensure even a bare-minimum level of reliability, present-day solutions tend to have high performance, power and area overheads. Ideally, we would like memory systems to remain robust, scalable, and implementable while keeping the overheads to a minimum. This dissertation describes how simple cross-layer architectural techniques can provide orders of magnitude higher reliability and enable seamless scalability for memory systems while incurring negligible overheads.Comment: PhD thesis, Georgia Institute of Technology (May 2017

Dependability Assessment of NAND Flash-memory for Mission-critical Applications

It is a matter of fact that NAND flash memory devices are well established in consumer market. However, it is not true that the same architectures adopted in the consumer market are suitable for mission critical applications like space. In fact, USB flash drives, digital cameras, MP3 players are usually adopted to store "less significant" data which are not changing frequently (e.g., MP3s, pictures, etc.). Therefore, in spite of NAND flash's drawbacks, a modest complexity is usually needed in the logic of commercial flash drives. On the other hand, mission critical applications have different reliability requirements from commercial scenarios. Moreover, they are usually playing in a hostile environment (e.g., the space) which contributes to worsen all the issues. We aim at providing practical valuable guidelines, comparisons and tradeoffs among the huge number of dimensions of fault tolerant methodologies for NAND flash applied to critical environments. We hope that such guidelines will be useful for our ongoing research and for all the interested reader

LOT-ECC: LOcalized and tiered reliability mechanisms for commodity memory systems

pre-printMemory system reliability is a serious and growing concern in modern servers. Existing chipkill-level mem- ory protection mechanisms suffer from several draw- backs. They activate a large number of chips on ev- ery memory access - this increases energy consump- tion, and reduces performance due to the reduction in rank-level parallelism. Additionally, they increase ac- cess granularity, resulting in wasted bandwidth in the absence of sufficient access locality. They also restrict systems to use narrow-I/O x4 devices, which are known to be less energy-efficient than the wider x8 DRAM de- vices. In this paper, we present LOT-ECC, a local- ized and multi-tiered protection scheme that attempts to solve these problems. We separate error detection and error correction functionality, and employ simple checksum and parity codes effectively to provide strong fault-tolerance, while simultaneously simplifying imple- mentation. Data and codes are localized to the same DRAM row to improve access efficiency. We use sys- tem firmware to store correction codes in DRAM data memory and modify the memory controller to handle data mapping. We thus build an effective fault-tolerance mechanism that provides strong reliability guarantees, activates as few chips as possible (reducing power con- sumption by up to 44.8% and reducing latency by up to 46.9%), and reduces circuit complexity, all while work- ing with commodity DRAMs and operating systems. Fi- nally, we propose the novel concept of a heterogeneous DIMM that enables the extension of LOT-ECC to x16 and wider DRAM parts

LOT-ECC: LOcalized and tiered reliability mechanisms for commodity memory systems

pre-printMemory system reliability is a serious and growing concern in modern servers. Existing chipkill-level mem- ory protection mechanisms suffer from several draw- backs. They activate a large number of chips on ev- ery memory access - this increases energy consump- tion, and reduces performance due to the reduction in rank-level parallelism. Additionally, they increase ac- cess granularity, resulting in wasted bandwidth in the absence of sufficient access locality. They also restrict systems to use narrow-I/O x4 devices, which are known to be less energy-efficient than the wider x8 DRAM de- vices. In this paper, we present LOT-ECC, a local- ized and multi-tiered protection scheme that attempts to solve these problems. We separate error detection and error correction functionality, and employ simple checksum and parity codes effectively to provide strong fault-tolerance, while simultaneously simplifying imple- mentation. Data and codes are localized to the same DRAM row to improve access efficiency. We use sys- tem firmware to store correction codes in DRAM data memory and modify the memory controller to handle data mapping. We thus build an effective fault-tolerance mechanism that provides strong reliability guarantees, activates as few chips as possible (reducing power con- sumption by up to 44.8% and reducing latency by up to 46.9%), and reduces circuit complexity, all while work- ing with commodity DRAMs and operating systems. Fi- nally, we propose the novel concept of a heterogeneous DIMM that enables the extension of LOT-ECC to x16 and wider DRAM parts

Fault and Defect Tolerant Computer Architectures: Reliable Computing With Unreliable Devices

This research addresses design of a reliable computer from unreliable device technologies. A system architecture is developed for a fault and defect tolerant (FDT) computer. Trade-offs between different techniques are studied and yield and hardware cost models are developed. Fault and defect tolerant designs are created for the processor and the cache memory. Simulation results for the content-addressable memory (CAM)-based cache show 90% yield with device failure probabilities of 3 x 10(-6), three orders of magnitude better than non fault tolerant caches of the same size. The entire processor achieves 70% yield with device failure probabilities exceeding 10(-6). The required hardware redundancy is approximately 15 times that of a non-fault tolerant design. While larger than current FT designs, this architecture allows the use of devices much more likely to fail than silicon CMOS. As part of model development, an improved model is derived for NAND Multiplexing. The model is the first accurate model for small and medium amounts of redundancy. Previous models are extended to account for dependence between the inputs and produce more accurate results

Dependability Assessment of NAND Flash-memory for Mission-critical Applications

It is a matter of fact that NAND flash memory devices are well established in consumer market. However, it is not true that the same architectures adopted in the consumer market are suitable for mission critical applications like space. In fact, USB flash drives, digital cameras, MP3 players are usually adopted to store "less significant" data which are not changing frequently (e.g., MP3s, pictures, etc.). Therefore, in spite of NAND flash’s drawbacks, a modest complexity is usually needed in the logic of commercial flash drives. On the other hand, mission critical applications have different reliability requirements from commercial scenarios. Moreover, they are usually playing in a hostile environment (e.g., the space) which contributes to worsen all the issues. We aim at providing practical valuable guidelines, comparisons and tradeoffs among the huge number of dimensions of fault tolerant methodologies for NAND flash applied to critical environments. We hope that such guidelines will be useful for our ongoing research and for all the interested readers

성능과 용량 향상을 위한 적층형 메모리 구조

학위논문 (박사)-- 서울대학교 대학원 : 융합과학기술대학원 융합과학부(지능형융합시스템전공), 2019. 2. 안정호.The advance of DRAM manufacturing technology slows down, whereas the density and performance needs of DRAM continue to increase. This desire has motivated the industry to explore emerging Non-Volatile Memory (e.g., 3D XPoint) and the high-density DRAM (e.g., Managed DRAM Solution). Since such memory technologies increase the density at the cost of longer latency, lower bandwidth, or both, it is essential to use them with fast memory (e.g., conventional DRAM) to which hot pages are transferred at runtime. Nonetheless, we observe that page transfers to fast memory often block memory channels from servicing memory requests from applications for a long period. This in turn significantly increases the high-percentile response time of latency-sensitive applications. In this thesis, we propose a high-density managed DRAM architecture, dubbed 3D-XPath for applications demanding both low latency and high capacity for memory. 3D-XPath DRAM stacks conventional DRAM dies with high-density DRAM dies explored in this thesis and connects these DRAM dies with 3D-XPath. Especially, 3D-XPath allows unused memory channels to service memory requests from applications when primary channels supposed to handle the memory requests are blocked by page transfers at given moments, considerably increasing the high-percentile response time. This can also improve the throughput of applications frequently copying memory blocks between kernel and user memory spaces. Our evaluation shows that 3D-XPath DRAM decreases high-percentile response time of latency-sensitive applications by ∼30% while improving the throughput of an I/O-intensive applications by ∼39%, compared with DRAM without 3D-XPath. Recent computer systems are evolving toward the integration of more CPU cores into a single socket, which require higher memory bandwidth and capacity. Increasing the number of channels per socket is a common solution to the bandwidth demand and to better utilize these increased channels, data bus width is reduced and burst length is increased. However, this longer burst length brings increased DRAM access latency. On the memory capacity side, process scaling has been the answer for decades, but cell capacitance now limits how small a cell could be. 3D stacked memory solves this problem by stacking dies on top of other dies. We made a key observation in real multicore machine that multiple memory controllers are always not fully utilized on SPEC CPU 2006 rate benchmark. To bring these idle channels into play, we proposed memory channel sharing architecture to boost peak bandwidth of one memory channel and reduce the burst latency on 3D stacked memory. By channel sharing, the total performance on multi-programmed workloads and multi-threaded workloads improved up to respectively 4.3% and 3.6% and the average read latency reduced up to 8.22% and 10.18%.DRAM 제조 기술의 발전은 속도가 느려지는 반면 DRAM의 밀도 및 성능 요구는 계속 증가하고 있다. 이러한 요구로 인해 새로운 비 휘발성 메모리(예: 3D-XPoint) 및 고밀도 DRAM(예: Managed asymmetric latency DRAM Solution)이 등장하였다. 이러한 고밀도 메모리 기술은 긴 레이턴시, 낮은 대역폭 또는 두 가지 모두를 사용하는 방식으로 밀도를 증가시키기 때문에 성능이 좋지 않아, 핫 페이지를 고속 메모리(예: 일반 DRAM)로 스왑되는 저용량의 고속 메모리가 동시에 사용되는 것이 일반적이다. 이러한 스왑 과정에서 빠른 메모리로의 페이지 전송이 일반적인 응용프로그램의 메모리 요청을 오랫동안 처리하지 못하도록 하기 때문에, 대기 시간에 민감한 응용 프로그램의 백분위 응답 시간을 크게 증가시켜, 응답 시간의 표준 편차를 증가시킨다. 이러한 문제를 해결하기 위해 본 학위 논문에서는 저 지연시간 및 고용량 메모리를 요구하는 애플리케이션을 위해 3D-XPath, 즉 고밀도 관리 DRAM 아키텍처를 제안한다. 이러한 3D-톔소를 집적한 DRAM은 저속의 고밀도 DRAM 다이를 기존의 일반적인 DRAM 다이와 동시에 한 칩에 적층하고, DRAM 다이끼리는 제안하는 3D-XPath 하드웨어를 통해 연결된다. 이러한 3D-XPath는 핫 페이지 스왑이 일어나는 동안 응용프로그램의 메모리 요청을 차단하지 않고 사용량이 적은 메모리 채널로 핫 페이지 스왑을 처리 할 수 있도록 하여, 데이터 집중 응용 프로그램의 백분위 응답 시간을 개선시킨다. 또한 제안하는 하드웨어 구조를 사용하여, 추가적으로 O/S 커널과 유저 스페이스 간의 메모리 블록을 자주 복사하는 응용 프로그램의 처리량을 향상시킬 수 있다. 이러한 3D-XPath DRAM은 3D-XPath가 없는 DRAM에 비해 I/O 집약적인 응용프로그램의 처리량을 최대 39 % 향상시키면서 레이턴시에 민감한 응용 프로그램의 높은 백분위 응답 시간을 최대 30 %까지 감소시킬 수 있다. 또한 최근의 컴퓨터 시스템은 보다 많은 메모리 대역폭과 용량을 필요로하는 더 많은 CPU 코어를 단일 소켓으로 통합하는 방향으로 진화하고 있다. 이러한 소켓 당 채널 수를 늘리는 것은 대역폭 요구에 대한 일반적인 해결책이며, 최신의 DRAM 인터페이스의 발전 양상은 증가한 채널을 보다 잘 활용하기 위해 데이터 버스 폭이 감소되고 버스트 길이가 증가한다. 그러나 길어진 버스트 길이는 DRAM 액세스 대기 시간을 증가시킨다. 추가적으로 최신의 응용프로그램은 더 많은 메모리 용량을 요구하며, 미세 공정으로 메모리 용량을 증가시키는 방법론은 수십 년 동안 사용되었지만, 20 nm 이하의 미세공정에서는 더 이상 공정 미세화를 통해 메모리 밀도를 증가시키기가 어려운 상황이며, 적층형 메모리를 사용하여 용량을 증가시키는 방법을 사용한다. 이러한 상황에서, 실제 최신의 멀티코어 머신에서 SPEC CPU 2006 응용프로그램을 멀티코어에서 실행하였을 때, 항상 시스템의 모든 메모리 컨트롤러가 완전히 활용되지 않는다는 사실을 관찰했다. 이러한 유휴 채널을 사용하기 위해 하나의 메모리 채널의 피크 대역폭을 높이고 3D 스택 메모리의 버스트 대기 시간을 줄이기 위해 본 학위 논문에서는 메모리 채널 공유 아키텍처를 제안하였으며, 하드웨어 블록을 제안하였다. 이러한 채널 공유를 통해 멀티 프로그램 된 응용프로그램 및 다중 스레드 응용프로그램 성능이 각각 4.3 % 및 3.6 %로 향상되었으며 평균 읽기 대기 시간은 8.22 % 및 10.18 %로 감소하였다.Contents Abstract i Contents iv List of Figures vi List of Tables viii Introduction 1 1.1 3D-XPath: High-Density Managed DRAM Architecture with Cost-effective Alternative Paths for Memory Transactions 5 1.2 Boosting Bandwidth – Dynamic Channel Sharing on 3D Stacked Memory 9 1.3 Research contribution 13 1.4 Outline 14 3D-stacked Heterogeneous Memory Architecture with Cost-effective Extra Block Transfer Paths 17 2.1 Background 17 2.1.1 Heterogeneous Main Memory Systems 17 2.1.2 Specialized DRAM 19 2.1.3 3D-stacked Memory 22 2.2 HIGH-DENSITY DRAM ARCHITECTURE 27 2.2.1 Key Design Challenges 29 2.2.2 Plausible High-density DRAM Designs 33 2.3 3D-STACKED DRAM WITH ALTERNATIVE PATHS FOR MEMORY TRANSACTIONS 37 2.3.1 3D-XPath Architecture 41 2.3.2 3D-XPath Management 46 2.4 EXPERIMENTAL METHODOLOGY 52 2.5 EVALUATION 56 2.5.1 OLDI Workloads 56 2.5.2 Non-OLDI Workloads 61 2.5.3 Sensitivity Analysis 66 2.6 RELATED WORK 70 Boosting bandwidth –Dynamic Channel Sharing on 3D Stacked Memory 72 3.1 Background: Memory Operations 72 3.1.1. Memory Controller 72 3.1.2 DRAM column access sequence 73 3.2 Related Work 74 3.3. CHANNEL SHARING ENABLED MEMORY SYSTEM 76 3.3.1 Hardware Requirements 78 3.3.2 Operation Sequence 81 3.4 Analysis 87 3.4.1 Experiment Environment 87 3.4.2 Performance 88 3.4.3 Overhead 90 CONCLUSION 92 REFERENCES 94 국문초록 107Docto

Techniques for Improving Security and Trustworthiness of Integrated Circuits

The integrated circuit (IC) development process is becoming increasingly vulnerable to malicious activities because untrusted parties could be involved in this IC development flow. There are four typical problems that impact the security and trustworthiness of ICs used in military, financial, transportation, or other critical systems: (i) Malicious inclusions and alterations, known as hardware Trojans, can be inserted into a design by modifying the design during GDSII development and fabrication. Hardware Trojans in ICs may cause malfunctions, lower the reliability of ICs, leak confidential information to adversaries or even destroy the system under specifically designed conditions. (ii) The number of circuit-related counterfeiting incidents reported by component manufacturers has increased significantly over the past few years with recycled ICs contributing the largest percentage of the total reported counterfeiting incidents. Since these recycled ICs have been used in the field before, the performance and reliability of such ICs has been degraded by aging effects and harsh recycling process. (iii) Reverse engineering (RE) is process of extracting a circuit’s gate-level netlist, and/or inferring its functionality. The RE causes threats to the design because attackers can steal and pirate a design (IP piracy), identify the device technology, or facilitate other hardware attacks. (iv) Traditional tools for uniquely identifying devices are vulnerable to non-invasive or invasive physical attacks. Securing the ID/key is of utmost importance since leakage of even a single device ID/key could be exploited by an adversary to hack other devices or produce pirated devices. In this work, we have developed a series of design and test methodologies to deal with these four challenging issues and thus enhance the security, trustworthiness and reliability of ICs. The techniques proposed in this thesis include: a path delay fingerprinting technique for detection of hardware Trojans, recycled ICs, and other types counterfeit ICs including remarked, overproduced, and cloned ICs with their unique identifiers; a Built-In Self-Authentication (BISA) technique to prevent hardware Trojan insertions by untrusted fabrication facilities; an efficient and secure split manufacturing via Obfuscated Built-In Self-Authentication (OBISA) technique to prevent reverse engineering by untrusted fabrication facilities; and a novel bit selection approach for obtaining the most reliable bits for SRAM-based physical unclonable function (PUF) across environmental conditions and silicon aging effects