Temporal and spatial combining for 5G mmWave small cells

This chapter proposes the combination of temporal processing through Rake combining based on direct sequence-spread spectrum (DS-SS), and multiple antenna beamforming or antenna spatial diversity as a possible physical layer access technique for fifth generation (5G) small cell base stations (SBS) operating in the millimetre wave (mmWave) frequencies. Unlike earlier works in the literature aimed at previous generation wireless, the use of the beamforming is presented as operating in the radio frequency (RF) domain, rather than the baseband domain, to minimise power expenditure as a more suitable method for 5G small cells. Some potential limitations associated with massive multiple input-multiple output (MIMO) for small cells are discussed relating to the likely limitation on available antennas and resultant beamwidth. Rather than relying, solely, on expensive and potentially power hungry massive MIMO (which in the case of a SBS for indoor use will be limited by a physically small form factor) the use of a limited number of antennas, complimented with Rake combining, or antenna diversity is given consideration for short distance indoor communications for both the SBS) and user equipment (UE). The proposal’s aim is twofold: to solve eroded path loss due to the effective antenna aperture reduction and to satisfy sensitivity to blockages and multipath dispersion in indoor, small coverage area base stations. Two candidate architectures are proposed. With higher data rates, more rigorous analysis of circuit power and its effect on energy efficiency (EE) is provided. A detailed investigation is provided into the likely design and signal processing requirements. Finally, the proposed architectures are compared to current fourth generation long term evolution (LTE) MIMO technologies for their anticipated power consumption and EE

Addressing Manufacturing Challenges in NoC-based ULSI Designs

Hernández Luz, C. (2012). Addressing Manufacturing Challenges in NoC-based ULSI Designs [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/1669

Design and Analysis of Robust Low Voltage Static Random Access Memories.

Static Random Access Memory (SRAM) is an indispensable part of most modern VLSI designs and dominates silicon area in many applications. In scaled technologies, maintaining high SRAM yield becomes more challenging since they are particularly vulnerable to process variations due to 1) the minimum sized devices used in SRAM bitcells and 2) the large array sizes. At the same time, low power design is a key focus throughout the semiconductor industry. Since low voltage operation is one of the most effective ways to reduce power consumption due to its quadratic relationship to energy savings, lowering the minimum operating voltage (Vmin) of SRAM has gained significant interest. This thesis presents four different approaches to design and analyze robust low voltage SRAM: SRAM analysis method improvement, SRAM bitcell development, SRAM peripheral optimization, and advance device selection. We first describe a novel yield estimation method for bit-interleaved voltage-scaled 8-T SRAMs. Instead of the traditional trade-off between write and read, the trade-off between write and half select disturb is analyzed. In addition, this analysis proposes a method to find an appropriate Write Word-Line (WWL) pulse width to maximize yield. Second, low leakage 10-T SRAM with speed compensation scheme is proposed. During sleep mode of a sensor application, SRAM retaining data cannot be shut down so it is important to minimize leakage in SRAM. This work adopts several leakage reduction techniques while compensating performance. Third, adaptive write architecture for low voltage 8-T SRAMs is proposed. By adaptively modulating WWL width and voltage level, it is possible to achieve low power consumption while maintaining high yield without excessive performance degradation. Finally, low power circuit design based on heterojunction tunneling transistors (HETTs) is discussed. HETTs have a steep subthreshold swing beneficial for low voltage operation. Device modeling and design of logic and SRAM are proposed.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/91569/1/daeyeonk_1.pd

Modeling DVFS and Power-Gating Actuators for Cycle-Accurate NoC-Based Simulators

Networks-on-chip (NoCs) are a widely recognized viable interconnection paradigm to support the multi-core revolution. One of the major design issues of multicore architectures is still the power, which can no longer be considered mainly due to the cores, since the NoC contribution to the overall energy budget is relevant. To face both static and dynamic power while balancing NoC performance, different actuators have been exploited in literature, mainly dynamic voltage frequency scaling (DVFS) and power gating. Typically, simulation-based tools are employed to explore the huge design space by adopting simplified models of the components. As a consequence, the majority of state-of-the-art on NoC power-performance optimization do not accurately consider timing and power overheads of actuators, or (even worse) do not consider them at all, with the risk of overestimating the benefits of the proposed methodologies. This article presents a simulation framework for power-performance analysis of multicore architectures with specific focus on the NoC. It integrates accurate power gating and DVFS models encompassing also their timing and power overheads. The value added of our proposal is manyfold: (i) DVFS and power gating actuators are modeled starting from SPICE-level simulations; (ii) such models have been integrated in the simulation environment; (iii) policy analysis support is plugged into the framework to enable assessment of different policies; (iv) a flexible GALS (globally asynchronous locally synchronous) support is provided, covering both handshake and FIFO re-synchronization schemas. To demonstrate both the flexibility and extensibility of our proposal, two simple policies exploiting the modeled actuators are discussed in the article

A sensor-less NBTI mitigation methodology for NoC architectures

CMOS technology improvement allows to increase the number of cores integrated on a single chip and makes Network-on-Chips (NoCs) a key component from the performance and reliability standpoints. Unfortunately, continuous scaling of CMOS technology poses severe concerns regarding failure mechanisms such as NBTI and stressmigration, that are crucial in achieving acceptable component lifetime. Process variation complicates the scenario, decreasing device lifetime and performance predictability during chip fabrication. This paper presents a novel sensor-less methodology to reduce the NBTI degradation in the on-chip network virtual channel buffers, considering process variation effects as well. Experimental validation is obtained using a cycle accurate simulator considering both real and synthetic traffic patterns. We compare our methodology to the best sensor-wise approach used as reference golden model. The proposed sensor-less strategy achieves results within 25% to the optimal sensor-wise methodology while this gap is reduced around 10% decreasing the number of virtual channels per input port. Moreover, our proposal can mitigate NBTI impact both in short and long run, since we recover both the most degraded VC (short run) as well as all the other VCs (long term)

The Development Of A Capacitive Parasitic Element Extraction And Estimation Methodology To Improve Design Cycle

In the chip industry today, the key goals of a chip development organization is to develop and market chips within a short timeframe to gain foothold on market share. Despite this requirement, chip design and manufacturing are increasing in level of complexity due to advancement in process technology. Thus, the objective of this research is to propose a design flow around the area of parasitic extraction to improve the design cycle timeline. The proposed design flow utilizes the usage of metal fill emulation as opposed to current flow which performs metal fill insertion directly. By replacing metal fill structures with an emulation methodology in earlier iterations of the design flow, this is targeted to help reduce runtime in fill insertion stage. Design of experiments methodology utilizing RCBD, ANOVA and Fisher’s LSD are used to select an appropriate emulated metal fill width to improve emulation accuracy. The experiment is conducted on 45nm and 65nm process technologies and test cases of different sizes, ranging from 1000 gates to 21000 gates to observe differences exhibited in the outcome. When compared with the general design flow, around 92% of all the nets in the design show differences of lesser than 15% in capacitance value for 45nm and 88% for 65nm. This is in line with the permissible error of a 2.5D parasitic extraction engine to achieve within 20% difference in extracted capacitance values. Runtime reduction achieved was from 41% to 43% lesser than the general design flow for the number of 15 iterations. In industrial usage, this flow is appropriate for new designs where number of iterations required due to design optimization is high

Through-silicon-via-aware prediction and physical design for multi-granularity 3D integrated circuits

The main objective of this research is to predict the wirelength, area, delay, and power of multi-granularity three-dimensional integrated circuits (3D ICs), to develop physical design methodologies and algorithms for the design of multi-granularity 3D ICs, and to investigate the impact of through-silicon vias (TSVs) on the quality of 3D ICs. This dissertation supports these objectives by addressing six research topics. The first pertains to analytical models that predict the interconnects of multi-granularity 3D ICs, and the second focuses on the development of analytical models of the capacitive coupling of TSVs. The third and the fourth topics present design methodologies and algorithms for the design of gate- and block-level 3D ICs, and the fifth topic pertains to the impact of TSVs on the quality of 3D ICs. The final topic addresses topography variation in 3D ICs. The first section of this dissertation presents TSV-aware interconnect prediction models for multi-granularity 3D ICs. As previous interconnect prediction models for 3D ICs did not take TSV area into account, they were not capable of predicting many important characteristics of 3D ICs related to TSVs. This section will present several previous interconnect prediction models that have been improved so that the area occupied by TSVs is taken into account. The new models show numerous important predictions such as the existence of the number of TSVs minimizing wirelength. The second section presents fast estimation of capacitive coupling of TSVs and wires. Since TSV-to-TSV and TSV-to-wire coupling capacitance is dependent on their relative locations, fast estimation of the coupling capacitance of a TSV is essential for the timing optimization of 3D ICs. Simulation results show that the analytical models presented in this section are sufficiently accurate for use at various design steps that require the computation of TSV capacitance. The third and fourth sections present design methodologies and algorithms for gate- and block-level 3D ICs. One of the biggest differences in the design of 2D and 3D ICs is that the latter requires TSV insertion. Since no widely-accepted design methodology designates when, where, and how TSVs are inserted, this work develops and presents several design methodologies for gate- and block-level 3D ICs and physical design algorithms supporting them. Simulation results based on GDSII-level layouts validate the design methodologies and present evidence of their effectiveness. The fifth section explores the impact of TSVs on the quality of 3D ICs. As TSVs become smaller, devices are shrinking, too. Since the relative size of TSVs and devices is more critical to the quality of 3D ICs than the absolute size of TSVs and devices, TSVs and devices should be taken into account in the study of the impact of TSVs on the quality of 3D ICs. In this section, current and future TSVs and devices are combined to produce 3D IC layouts and the impact of TSVs on the quality of 3D ICs is investigated. The final section investigates topography variation in 3D ICs. Since landing pads fabricated in the bottommost metal layer are attached to TSVs, they are larger than TSVs, so they could result in serious topography variation. Therefore, topography variation, especially in the bottommost metal layer, is investigated and two layout optimization techniques are applied to a global placement algorithm that minimizes the topography variation of the bottommost metal layer of 3D ICs.PhDCommittee Chair: Lim, Sung Kyu; Committee Member: Bakir, Muhannad; Committee Member: Kim, Hyesoon; Committee Member: Lee, Hsien-Hsin Sean; Committee Member: Mukhopadhyay, Saiba