Improving Phase Change Memory Performance with Data Content Aware Access

A prominent characteristic of write operation in Phase-Change Memory (PCM) is that its latency and energy are sensitive to the data to be written as well as the content that is overwritten. We observe that overwriting unknown memory content can incur significantly higher latency and energy compared to overwriting known all-zeros or all-ones content. This is because all-zeros or all-ones content is overwritten by programming the PCM cells only in one direction, i.e., using either SET or RESET operations, not both. In this paper, we propose data content aware PCM writes (DATACON), a new mechanism that reduces the latency and energy of PCM writes by redirecting these requests to overwrite memory locations containing all-zeros or all-ones. DATACON operates in three steps. First, it estimates how much a PCM write access would benefit from overwriting known content (e.g., all-zeros, or all-ones) by comprehensively considering the number of set bits in the data to be written, and the energy-latency trade-offs for SET and RESET operations in PCM. Second, it translates the write address to a physical address within memory that contains the best type of content to overwrite, and records this translation in a table for future accesses. We exploit data access locality in workloads to minimize the address translation overhead. Third, it re-initializes unused memory locations with known all-zeros or all-ones content in a manner that does not interfere with regular read and write accesses. DATACON overwrites unknown content only when it is absolutely necessary to do so. We evaluate DATACON with workloads from state-of-the-art machine learning applications, SPEC CPU2017, and NAS Parallel Benchmarks. Results demonstrate that DATACON significantly improves system performance and memory system energy consumption compared to the best of performance-oriented state-of-the-art techniques.Comment: 18 pages, 21 figures, accepted at ACM SIGPLAN International Symposium on Memory Management (ISMM

MorphIC: A 65-nm 738k-Synapse/mm2^2 Quad-Core Binary-Weight Digital Neuromorphic Processor with Stochastic Spike-Driven Online Learning

Recent trends in the field of neural network accelerators investigate weight quantization as a means to increase the resource- and power-efficiency of hardware devices. As full on-chip weight storage is necessary to avoid the high energy cost of off-chip memory accesses, memory reduction requirements for weight storage pushed toward the use of binary weights, which were demonstrated to have a limited accuracy reduction on many applications when quantization-aware training techniques are used. In parallel, spiking neural network (SNN) architectures are explored to further reduce power when processing sparse event-based data streams, while on-chip spike-based online learning appears as a key feature for applications constrained in power and resources during the training phase. However, designing power- and area-efficient spiking neural networks still requires the development of specific techniques in order to leverage on-chip online learning on binary weights without compromising the synapse density. In this work, we demonstrate MorphIC, a quad-core binary-weight digital neuromorphic processor embedding a stochastic version of the spike-driven synaptic plasticity (S-SDSP) learning rule and a hierarchical routing fabric for large-scale chip interconnection. The MorphIC SNN processor embeds a total of 2k leaky integrate-and-fire (LIF) neurons and more than two million plastic synapses for an active silicon area of 2.86mm$^2$ in 65nm CMOS, achieving a high density of 738k synapses/mm$^2$. MorphIC demonstrates an order-of-magnitude improvement in the area-accuracy tradeoff on the MNIST classification task compared to previously-proposed SNNs, while having no penalty in the energy-accuracy tradeoff.Comment: This document is the paper as accepted for publication in the IEEE Transactions on Biomedical Circuits and Systems journal (2019), the fully-edited paper is available at https://ieeexplore.ieee.org/document/876400

Energy Saving Techniques for Phase Change Memory (PCM)

In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory (PCM), which has low read latency and power; and nearly zero leakage power. However, the write latency and power of PCM are very high and this, along with limited write endurance of PCM present significant challenges in enabling wide-spread adoption of PCM. To address this, several architecture-level techniques have been proposed. In this report, we review several techniques to manage power consumption of PCM. We also classify these techniques based on their characteristics to provide insights into them. The aim of this work is encourage researchers to propose even better techniques for improving energy efficiency of PCM based main memory.Comment: Survey, phase change RAM (PCRAM

Exploiting Inter- and Intra-Memory Asymmetries for Data Mapping in Hybrid Tiered-Memories

Modern computing systems are embracing hybrid memory comprising of DRAM and non-volatile memory (NVM) to combine the best properties of both memory technologies, achieving low latency, high reliability, and high density. A prominent characteristic of DRAM-NVM hybrid memory is that it has NVM access latency much higher than DRAM access latency. We call this inter-memory asymmetry. We observe that parasitic components on a long bitline are a major source of high latency in both DRAM and NVM, and a significant factor contributing to high-voltage operations in NVM, which impact their reliability. We propose an architectural change, where each long bitline in DRAM and NVM is split into two segments by an isolation transistor. One segment can be accessed with lower latency and operating voltage than the other. By introducing tiers, we enable non-uniform accesses within each memory type (which we call intra-memory asymmetry), leading to performance and reliability trade-offs in DRAM-NVM hybrid memory. We extend existing NVM-DRAM OS in three ways. First, we exploit both inter- and intra-memory asymmetries to allocate and migrate memory pages between the tiers in DRAM and NVM. Second, we improve the OS's page allocation decisions by predicting the access intensity of a newly-referenced memory page in a program and placing it to a matching tier during its initial allocation. This minimizes page migrations during program execution, lowering the performance overhead. Third, we propose a solution to migrate pages between the tiers of the same memory without transferring data over the memory channel, minimizing channel occupancy and improving performance. Our overall approach, which we call MNEME, to enable and exploit asymmetries in DRAM-NVM hybrid tiered memory improves both performance and reliability for both single-core and multi-programmed workloads.Comment: 15 pages, 29 figures, accepted at ACM SIGPLAN International Symposium on Memory Managemen

Efficient scrub mechanisms for error-prone emerging memories

Journal ArticleMany memory cell technologies are being considered as possible replacements for DRAM and Flash technologies, both of which are nearing their scaling limits. While these new cells (PCM, STT-RAM, FeRAM, etc.) promise high density, better scaling, and non-volatility, they introduce new challenges. Solutions at the architecture level can help address some of these problems; e.g., prior re-search has proposed wear-leveling and hard error tolerance mechanisms to overcome the limited write endurance of PCM cells. In this paper, we focus on the soft error problem in PCM, a topic that has received little attention in the architecture community. Soft errors in DRAM memories are typically addressed by having SECDED support and a scrub mechanism. The scrub mechanism scans the memory looking for a single-bit error and corrects it be-fore the line experiences a second uncorrectable error. However, PCM (and other emerging memories) are prone to new sources of soft errors. In particular, multi-level cell (MLC) PCM devices will suffer from resistance drift, that increases the soft error rate and incurs high overheads for the scrub mechanism. This paper is the first to study the design of architectural scrub mechanisms, especially when tailored to the drift phenomenon in MLC PCM. Many of our solutions will also apply to other soft-error prone emerging memories. We first show that scrub overheads can be reduced with support for strong ECC codes and a lightweight error detection operation. We then design different scrub algorithms that can adaptively trade-off soft and hard errors. Using an approach that combines all proposed solutions, our scrub mechanism yields a 96.5% reduction in uncorrectable errors, a 24.4 × decrease in scrub-related writes, and a 37.8% reduction in scrub energy, relative to a basic scrub algorithm used in modern DRAM systems