Landau level spectra and the quantum Hall effect of multilayer graphene

The Landau level spectra and the quantum Hall effect of ABA-stacked multilayer graphenes are studied in the effective mass approximation. The low-energy effective mass Hamiltonian may be partially diagonalized into an approximate block-diagonal form, with each diagonal block contributing parabolic bands except, in a multilayer with an odd number of layers, for an additional block describing Dirac-like bands with a linear dispersion. We fully include the band parameters and, taking into account the symmetry of the lattice, we analyze their affect on the block-diagonal Hamiltonian. Next-nearest layer couplings are shown to be particularly important in determining the low-energy spectrum and the phase diagram of the quantum Hall conductivity, by causing energy shifts, level anti-crossings, and valley splitting of the low-lying Landau levels.Comment: 9 pages, 4 figure

Low-Energy Effective Hamiltonian and the Surface States of Ca_3PbO

The band structure of Ca_3PbO, which possesses a three-dimensional massive Dirac electron at the Fermi energy, is investigated in detail. Analysis of the orbital weight distributions on the bands obtained in the first-principles calculation reveals that the bands crossing the Fermi energy originate from the three Pb-p orbitals and three Ca-dx2y2 orbitals. Taking these Pb-p and Ca-dx2y2 orbitals as basis wave functions, a tight-binding model is constructed. With the appropriate choice of the hopping integrals and the strength of the spin-orbit coupling, the constructed model sucessfully captures important features of the band structure around the Fermi energy obtained in the first-principles calculation. By applying the suitable basis transformation and expanding the matrix elements in the series of the momentum measured from a Dirac point, the low-energy effective Hamiltonian of this model is explicitely derived and proved to be a Dirac Hamiltonain. The origin of the mass term is also discussed. It is shown that the spin-orbit coupling and the orbitals other than Pb-p and Ca-dx2y2 orbitals play important roles in making the mass term finite. Finally, the surface band structures of Ca_3PbO for several types of surfaces are investigated using the constructed tight-binding model. We find that there appear nontrivial surface states that cannot be explained as the bulk bands projected on the surface Brillouin zone. The relation to the topological insulator is also discussed.Comment: 11 page

Electron-phonon Interaction close to a Mott transition

The effect of Holstein electron-phonon interaction on a Hubbard model close to a Mott-Hubbard transition at half-filling is investigated by means of Dynamical Mean-Field Theory. We observe a reduction of the effective mass that we interpret in terms of a reduced effective repulsion. When the repulsion is rescaled to take into account this effect, the quasiparticle low-energy features are unaffected by the electron-phonon interaction. Phonon features are only observed within the high-energy Hubbard bands. The lack of electron-phonon fingerprints in the quasiparticle physics can be explained interpreting the quasiparticle motion in terms of rare fast processes.Comment: 4 pages, 3 color figures. Slightly revised text and references. Kondo effect result added in Fig. 2 for comparison with DMFT dat

Gunn Effect in Silicon Nanowires: Charge Transport under High Electric Field

Gunn (or Gunn-Hilsum) Effect and its associated negative differential resistivity (NDR) emanates from transfer of electrons between two different energy bands in a semiconductor. If applying a voltage (electric field) transfers electrons from an energy sub band of a low effective mass to a second one with higher effective mass, then the current drops. This manifests itself as a negative slope or NDR in the I-V characteristics of the device which is in essence due to the reduction of electron mobility. Recalling that mobility is inversely proportional to electron effective mass or curvature of the energy sub band. This effect was observed in semiconductors like GaAs which has direct bandgap of very low effective mass and its second indirect sub band is about 300 meV above the former. More importantly a self-repeating oscillation of spatially accumulated charge carriers along the transport direction occurs which is the artifact of NDR, a process which is called Gunn oscillation and was observed by J. B. Gunn. In sharp contrast to GaAs, bulk silicon has a very high energy spacing (~1 eV) which renders the initiation of transfer-induced NDR unobservable. Using Density Functional Theory (DFT), semi-empirical 10 orbital ($sp^{3}d^{5}s^{*}$) Tight Binding (TB) method and Ensemble Monte Carlo (EMC) simulations we show for the first time that (a) Gunn Effect can be induced in narrow silicon nanowires with diameters of 3.1 nm under 3 % tensile strain and an electric field of 5000 V/cm, (b) the onset of NDR in I-V characteristics is reversibly adjustable by strain and (c) strain can modulate the value of resistivity by a factor 2.3 for SiNWs of normal I-V characteristics i.e. those without NDR. These observations are promising for applications of SiNWs in electromechanical sensors and adjustable microwave oscillators.Comment: 18 pages, 6 figures, 63 reference

Observation of a localized flat-band state in a photonic Lieb lattice

We show experimentally how a non-diffracting state can be excited in a photonic Lieb lattice. This lattice supports three energy bands, including a perfectly flat middle band, which corresponds to an infinite effective mass with zero dispersion. We show that a suitable optical input state can be prepared so as to only excite the flat band. We analyse, both experimentally and theoretically, the evolution of such photonic flat-band states, and show their remarkable robustness, even in the presence of disorder.Comment: Accepted for publication in Physical Review Letter

Electronic dynamic Hubbard model: exact diagonalization study

A model to describe electronic correlations in energy bands is considered. The model is a generalization of the conventional Hubbard model that allows for the fact that the wavefunction for two electrons occupying the same Wannier orbital is different from the product of single electron wavefunctions. We diagonalize the Hamiltonian exactly on a four-site cluster and study its properties as function of band filling. The quasiparticle weight is found to decrease and the quasiparticle effective mass to increase as the electronic band filling increases, and spectral weight in one- and two-particle spectral functions is transfered from low to high frequencies as the band filling increases. Quasiparticles at the Fermi energy are found to be more 'dressed' when the Fermi level is in the upper half of the band (hole carriers) than when it is in the lower half of the band (electron carriers). The effective interaction between carriers is found to be strongly dependent on band filling becoming less repulsive as the band filling increases, and attractive near the top of the band in certain parameter ranges. The effective interaction is most attractive when the single hole carriers are most heavily dressed, and in the parameter regime where the effective interaction is attractive, hole carriers are found to 'undress', hence become more like electrons, when they pair. It is proposed that these are generic properties of electronic energy bands in solids that reflect a fundamental electron-hole asymmetry of condensed matter. The relation of these results to the understanding of superconductivity in solids is discussed.Comment: Small changes following referee's comment