Hybrid integration methods for on-chip quantum photonics

The goal of integrated quantum photonics is to combine components for the generation, manipulation, and detection of nonclassical light in a phase-stable and efficient platform. Solid-state quantum emitters have recently reached outstanding performance as single-photon sources. In parallel, photonic integrated circuits have been advanced to the point that thousands of components can be controlled on a chip with high efficiency and phase stability. Consequently, researchers are now beginning to combine these leading quantum emitters and photonic integrated circuit platforms to realize the best properties of each technology. In this paper, we review recent advances in integrated quantum photonics based on such hybrid systems. Although hybrid integration solves many limitations of individual platforms, it also introduces new challenges that arise from interfacing different materials. We review various issues in solid-state quantum emitters and photonic integrated circuits, the hybrid integration techniques that bridge these two systems, and methods for chip-based manipulation of photons and emitters. Finally, we discuss the remaining challenges and future prospects of on-chip quantum photonics with integrated quantum emitters. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreemen

Roadmap on semiconductor-cell biointerfaces.

This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world

From Quantum Optics to Quantum Technologies

Quantum optics is the study of the intrinsically quantum properties of light. During the second part of the 20th century experimental and theoretical progress developed together; nowadays quantum optics provides a testbed of many fundamental aspects of quantum mechanics such as coherence and quantum entanglement. Quantum optics helped trigger, both directly and indirectly, the birth of quantum technologies, whose aim is to harness non-classical quantum effects in applications from quantum key distribution to quantum computing. Quantum light remains at the heart of many of the most promising and potentially transformative quantum technologies. In this review, we celebrate the work of Sir Peter Knight and present an overview of the development of quantum optics and its impact on quantum technologies research. We describe the core theoretical tools developed to express and study the quantum properties of light, the key experimental approaches used to control, manipulate and measure such properties and their application in quantum simulation, and quantum computing.Comment: 20 pages, 3 figures, Accepted, Prog. Quant. Ele

Silicon - polymer hybrid integrated microwave photonic devices for optical interconnects and electromagnetic wave detection

textThe accelerating increase in information traffic demands the expansion of optical access network systems that require high-performance optical and photonic components. In short-range communication links, optical interconnects have been widely accepted as a viable approach to solve the problems that copper based electrical interconnects have encountered in keeping up with the surge in the data rate demand over the last decades. Low cost, ease of fabrication, and integration capabilities of low optical-loss polymers make them attractive for integrated photonic applications to support futuristic data communication networks. In addition to passive wave-guiding components, electro-optic (EO) polymers consisting of a polymeric matrix doped with organic nonlinear chromophores have enabled wide-RF-bandwidth and low-power active photonic devices. Beside board level passive and active optical components, on-chip micro- or nano-photonic devices have been made possible by the hybrid integration of EO polymers onto the silicon platform. In recent years, silicon photonics have attracted a significant amount of attentions, because it offers compact device size and the potential of complementary metal–oxide–semiconductor (CMOS) compatible photonic integrated circuits. The combination of silicon photonics and EO polymers can enable miniaturized and high-performance hybrid integrated photonic devices, such as electro-optic modulators, optical interconnects, and microwave photonic sensors. Silicon photonic crystal waveguides (PCWs) exhibit slow-light effects which are beneficial for device miniaturization. Especially, EO polymer filled silicon slotted PCWs further reduce the device size and enhance the device performance by combining the best of these two systems. The potential applications of these silicon-polymer hybrid integrated devices include not only optical interconnects, but also optical sensing and microwave photonics. In this dissertation, the design, fabrication, and characterization of several types of silicon-polymer hybrid photonic devices will be presented, including EO polymer filled silicon PCW modulators for on-chip optical interconnects, antenna-coupled optical modulators for electromagnetic wave detections, and low-loss strip-to-slot PCW mode converters. In addition, some polymer-based devices and silicon-based photonic devices will also be presented, such as traveling wave electro-optic polymer modulators based on domain-inversion directional couplers, and silicon thermo-optic switches based on coupled photonic crystal microcavities. Furthermore, some microwave (or RF) components such as integrated broadband bowtie antennas for microwave photonic applications will be covered. Some on-going work or suggested future work will also be introduced, including in-device pyroelectric poling for EO polymer filled silicon slot PCWs, millimeter- or Terahertz-wave sensors based on EO polymer filled plasmonic slot waveguide, low-loss silicon-polymer hybrid slot photonic crystal waveguides fabricated by CMOS foundry, logic devices based on EO polymer microring resonators, and so on.Electrical and Computer Engineerin

Optimizing the integration and energy efficiency of through silicon via-based 3D interconnects

The aggressive scaling of CMOS process technology has been driving the rapid growth of the semiconductor industry for more than three decades. In recent years, the performance gains enabled by CMOS scaling have been increasingly challenged by highlyparasitic on-chip interconnects as wire parasitics do not scale at the same pace. Emerging 3D integration technologies based on vertical through-silicon vias (TSVs) promise a solution to the interconnect performance bottleneck, along with reduced fabrication cost and heterogeneous integration. As TSVs are a relatively recent interconnect technology, innovative test structures are required to evaluate and optimise the process, as well as extract parameters for the generation of design rules and models. From the circuit designer’s perspective, critical TSV characteristics are its parasitic capacitance, and thermomechanical stress distribution. This work proposes new test structures for extracting these characteristics. The structures were fabricated on a 65nm 3D process and used for the evaluation of that technology. Furthermore, as TSVs are implemented in large, densely interconnected 3D-system-on-chips (SoCs), the TSV parasitic capacitance may become an important source of energy dissipation. Typical low-power techniques based on voltage scaling can be used, though this represents a technical challenge in modern technology nodes. In this work, a novel TSV interconnection scheme is proposed based on reversible computing, which shows frequencydependent energy dissipation. The scheme is analysed using theoretical modelling, while a demonstrator IC was designed based on the developed theory and fabricated on a 130nm 3D process.EThOS - Electronic Theses Online ServiceEngineering and Physical Science Research Council (EPSRC)GBUnited Kingdo