System status display information

The system Status Display is an electronic display system which provides the flight crew with enhanced capabilities for monitoring and managing aircraft systems. Guidelines for the design of the electronic system displays were established. The technical approach involved the application of a system engineering approach to the design of candidate displays and the evaluation of a Hernative concepts by part-task simulation. The system engineering and selection of candidate displays are covered

Substrate-induced band gap opening in epitaxial graphene

Graphene has shown great application potentials as the host material for next generation electronic devices. However, despite its intriguing properties, one of the biggest hurdles for graphene to be useful as an electronic material is its lacking of an energy gap in the electronic spectra. This, for example, prevents the use of graphene in making transistors. Although several proposals have been made to open a gap in graphene's electronic spectra, they all require complex engineering of the graphene layer. Here we show that when graphene is epitaxially grown on the SiC substrate, a gap of ~ 0.26 is produced. This gap decreases as the sample thickness increases and eventually approaches zero when the number of layers exceeds four. We propose that the origin of this gap is the breaking of sublattice symmetry owing to the graphene-substrate interaction. We believe our results highlight a promising direction for band gap engineering of graphene.Comment: 10 pages, 4 figures; updated reference

Enhancing thermoelectric figure-of-merit by low-dimensional electrical transport in phonon-glass crystals

Low-dimensional electronic and glassy phononic transport are two important ingredients of highly-efficient thermoelectric material, from which two branches of the thermoelectric research emerge. One focuses on controlling electronic transport in the low dimension, while the other on multiscale phonon engineering in the bulk. Recent work has benefited much from combining these two approaches, e.g., phonon engineering in low-dimensional materials. Here, we propose to employ the low-dimensional electronic structure in bulk phonon-glass crystal as an alternative way to increase the thermoelectric efficiency. Through first-principles electronic structure calculation and classical molecular dynamics simulation, we show that the $\pi$-$\pi$ stacking Bis-Dithienothiophene molecular crystal is a natural candidate for such an approach. This is determined by the nature of its chemical bonding. Without any optimization of the material parameter, we obtain a maximum room-temperature figure of merit, $ZT$, of $1.48$ at optimal doping, thus validating our idea.Comment: Nano Lett.201

Boundary condition and geometry engineering in electronic hydrodynamics

We analyze the role of boundary geometry in viscous electronic hydrodynamics. We address the twin questions of how boundary geometry impacts flow profiles, and how one can engineer boundary conditions -- in particular the effective slip parameter -- to manipulate the flow in a controlled way. We first propose a micropatterned geometry involving finned barriers, for which we show by an explicit solution that one can obtain effectively no-slip boundary conditions regardless of the detailed microscopic nature of the channel surface. Next we analyse the role of mesoscopic boundary curvature on the effective slip length, in particular its impact on the Gurzhi effect. Finally we investigate a hydrodynamic flow through a circular junction, providing a solution, which suggests an experimental set-up for determining the slip parameter. We find that its transport properties differ qualitatively from the case of ballistic conduction, and thus presents a promising setting for distinguishing the two.Comment: 9 pages, 15 figures, 5 appendice

Research Laboratory of Electronics Quarterly progress report, period ending 28 Feb. 1967

General physics, plasma dynamics, engineering, and communication sciences programs at Research Laboratory of Electronic

Tuning the electronic transport properties of graphene through functionalisation with fluorine

Engineering the electronic properties of graphene has triggered great interest for potential applications in electronics and opto-electronics. Here we demonstrate the possibility to tune the electronic transport properties of graphene monolayers and multilayers by functionalisation with fluorine. We show that by adjusting the fluorine content different electronic transport regimes can be accessed. For monolayer samples, with increasing the fluorine content, we observe a transition from electronic transport through Mott variable range hopping in two dimensions to Efros - Shklovskii variable range hopping. Multilayer fluorinated graphene with high concentration of fluorine show two-dimensional Mott variable range hopping transport, whereas CF0.28 multilayer flakes have a band gap of 0.25eV and exhibit thermally activated transport. Our experimental findings demonstrate that the ability to control the degree of functionalisation of graphene is instrumental to engineer different electronic properties in graphene materials.Comment: 6 pages, 5 figure