Tuning the resistive switching properties of TiO2-x films

We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state.Fil: Ghenzi, Néstor. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. CIC nanoGUNE; EspañaFil: Rozenberg, M.J.. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Université Paris Sud; FranciaFil: Llopis, R.. CIC nanoGUNE; EspañaFil: Levy, Pablo Eduardo. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Hueso, Luis E.. Universidad del País Vasco; España. Fundación Vasca para la Ciencia; EspañaFil: Stoliar, Pablo Alberto. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. CIC nanoGUNE; Españ

Discussion On Device Structures And Hermetic Encapsulation For SiOx Random Access Memory Operation In Air

An edge-free structure and hermetic encapsulation technique are presented that enable SiOx-based resistive random-access memory (RRAM) operation in air. A controlled etch study indicates that the switching filament is close to the SiOx surface in devices with an exposed SiOx edge. Electrical test of encapsulated, edge-free devices in 1 atmosphere air indicates stable switching characteristics, unlike devices with an edge. This work demonstrates that SiOx RRAM is able to operate in air with proper encapsulation and an edge-free structure. The resistive switching failure mechanism when operating in air is explained by the oxidation of hydrogen-complexed defects in the switching filament. (C) 2014 AIP Publishing LLC.National Science Foundation IIP-1127537Microelectronics Research Cente

Current-Controlled Negative Differential Resistance due to Joule Heating in TiO2

We show that Joule heating causes current-controlled negative differential resistance (CC-NDR) in TiO2 by constructing an analytical model of the voltage-current V(I) characteristic based on polaronic transport for Ohm's Law and Newton's Law of Cooling, and fitting this model to experimental data. This threshold switching is the 'soft breakdown' observed during electroforming of TiO2 and other transition-metal-oxide based memristors, as well as a precursor to 'ON' or 'SET' switching of unipolar memristors from their high to their low resistance states. The shape of the V(I) curve is a sensitive indicator of the nature of the polaronic conduction.Comment: 13 pages, 2 figure

Nickel solution prepared for precision electroforming

Lightweight, precision optical reflectors are made by electroforming nickel onto masters. Steps for the plating bath preparation, process control testing, and bath composition adjustments are prescribed to avoid internal stresses and maintain dimensional accuracy of the electrodeposited metal

Heat exchanger and method of making

A heat exchange of increased effectiveness is disclosed. A porous metal matrix is disposed in a metal chamber or between walls through which a heat-transfer fluid is directed. The porous metal matrix has internal bonds and is bonded to the chamber in order to remove all thermal contact resistance within the composite structure. Utilization of the invention in a rocket chamber is disclosed as a specific use. Also disclosed is a method of constructing the heat exchanger

Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

Using current-sweep measurements, the set process in SiOx-based resistive random access memory (RRAM) has been found to consist of multiple resistance-reduction steps. Variation in set behaviors was observed and attributed to different defect distributions in the resistance switching region. Physical mechanism of electroforming process is discussed, which further explains the observed variation of defect distributions. A compliance current study confirms that the achievable memory states of SiOx RRAM are determined by its set behavior. This finding provides additional insight on achieving multi-bit memory storage with SiOx RRAM. (C) 2015 AIP Publishing LLC.Microelectronics Research Cente

Method of electroforming a rocket chamber

A transpiration cooled rocket chamber is made by forming a porous metal wall on a suitably shaped mandrel. The porous wall may be made of sintered powdered metal, metal fibers sintered on the mandrel or wires woven onto the mandrel and then sintered to bond the interfaces of the wires. Intersecting annular and longitudinal ribs are then electroformed on the porous wall. An interchamber wall having orifices therein is then electroformed over the annular and longitudinal ribs. Parallel longitudinal ribs are then formed on the outside surface of the interchamber wall after which an annular jacket is electroformed over the parallel ribs to form distribution passages therewith. A feed manifold communicating with the distribution passages may be fabricated and welded to the rocket chamber or the feed manifold may be electroformed in place

The Effects of Additives on the Physical Properties of Electroformed Nickel and on the Stretch of Photoelectroformed Nickel Components

The process of nickel electroforming is becoming increasingly important in the manufacture of MST products, as it has the potential to replicate complex geometries with extremely high fidelity. Electroforming of nickel uses multi-component electrolyte formulations in order to maximise desirable product properties. In addition to nickel sulphamate (the major electrolyte component), formulation additives can also comprise nickel chloride (to increase nickel anode dissolution), sulphamic acid (to control pH), boric acid (to act as a pH buffer), hardening/levelling agents (to increase deposit hardness and lustre) and wetting agents (to aid surface wetting and thus prevent gas bubbles and void formation). This paper investigates the effects of some of these variables on internal stress and stretch as a function of applied current density.Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions