ENERGY-EFFICIENT FEATURE EXTRACTION ENGINE AND SECURE CHIP IDENTIFICATION FOR UBIQUITOUS SURVEILLANCE

Ph.DDOCTOR OF PHILOSOPH

Unreliable Silicon: Circuit through System-Level Techniques for Mitigating the Adverse Effects of Process Variation, Device Degradation and Environmental Conditions.

Designing and manufacturing integrated circuits in advanced, highly-scaled processing technologies that meet stringent specification sets is an increasingly unreliable proposition. Dimensional processing variations, time and stress dependent device degradation and potentially varying environmental conditions exacerbate deviations in performance, power and even functionality of integrated circuits. This work explores a system-level adaptive design philosophy intended to mitigate the power and performance impact of unreliable silicon devices and presents enabling circuits for SRAM variation mitigation and in-situ measurement of device degradation in 130nm and 45nm processing technologies. An adaptation of RAZOR-based DVS designed for on-chip memory power reduction and reliability lifetime improvement enables the elimination of 250 mV of voltage margin in a 1.8V design, with up to 500 mV of reduction when allowing 5% of memory operations to use multiple cycles. A novel PID-controlled dynamic reliability management (DRM) system is presented, allowing user-specified circuit lifetime to be dynamically managed via dynamic voltage and frequency scaling. Peak performance improvement of 20-35% is achievable in typical processing systems by allowing brief periods of elevated voltage operation through the real-time DRM system, while minimizing voltage during non-critical periods of operation to maximize circuit lifetime. A probabilistic analysis of oxide breakdown using the percolation model indicates the need for 1000-2000 integrated in-situ sensors to achieve oxide lifetime prediction error at or under 10%. The conclusions from the oxide analysis are used to guide the design of a series of novel on-chip reliability monitoring circuits for use in a real-time DRM system. A 130nm in-situ oxide breakdown measurement sensor presented is the first published design of an oxide-breakdown oriented circuit and is compatible with standard-cell style automatic “place and route” design styles used in the majority of application specific integrated circuit designs. Measured results show increases in gate oxide leakage of 14-35% after accelerated stress testing. A second generation design of the on-chip oxide degradation sensor is presented that reduces stress mode power consumption by 111,785X over the initial design while providing an ideal 1:1 mapping of gate leakage to output frequency in extracted simulations.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/60701/1/ekarl_1.pd

Doctor of Philosophy

dissertationAdvancements in process technology and circuit techniques have enabled the creation of small chemical microsystems for use in a wide variety of biomedical and sensing applications. For applications requiring a small microsystem, many components can be integrated onto a single chip. This dissertation presents many low-power circuits, digital and analog, integrated onto a single chip called the Utah Microcontroller. To guide the design decisions for each of these components, two specific microsystems have been selected as target applications: a Smart Intravaginal Ring (S-IVR) and an NO releasing catheter. Both of these applications share the challenging requirements of integrating a large variety of low-power mixed-signal circuitry onto a single chip. These applications represent the requirements of a broad variety of small low-power sensing systems. In the course of the development of the Utah Microcontroller, several unique and significant contributions were made. A central component of the Utah Microcontroller is the WIMS Microprocessor, which incorporates a low-power feature called a scratchpad memory. For the first time, an analysis of scaling trends projected that scratchpad memories will continue to save power for the foreseeable future. This conclusion was bolstered by measured data from a fabricated microcontroller. In a 32 nm version of the WIMS Microprocessor, the scratchpad memory is projected to save ~10-30% of memory access energy depending upon the characteristics of the embedded program. Close examination of application requirements informed the design of an analog-to-digital converter, and a unique single-opamp buffered charge scaling DAC was developed to minimize power consumption. The opamp was designed to simultaneously meet the varied demands of many chip components to maximize circuit reuse. Each of these components are functional, have been integrated, fabricated, and tested. This dissertation successfully demonstrates that the needs of emerging small low-power microsystems can be met in advanced process nodes with the incorporation of low-power circuit techniques and design choices driven by application requirements