A Fully Differential Digital CMOS Pulse UWB Generator

A new fully-digital CMOS pulse generator for impulse-radio Ultra-Wide-Band (UWB) systems is presented. First, the shape of the pulse which best fits the FCC regulation in the 3.1-5 GHz sub-band of the entire 3.1-10.6 GHz UWB bandwidth is derived and approximated using rectangular digital pulses. In particular, the number and width of pulses that approximate an ideal template is found through an ad-hoc optimization methodology. Then a fully differential digital CMOS circuit that synthesizes the pulse sequence is conceived and its functionality demonstrated through post-layout simulations. The results show a very good agreement with the FCC requirements and a low power consumptio

Designing analog circuits in CMOS

The evolution in CMOS technology dictated by Moore's Law is clearly beneficial for designers of digital circuits, but it presents difficult challenges, such as lowered nominal supply voltages, for their peers in the analog world who want to keep pace with this rapid progression. This article discusses a number of significant items for analog designs in modern and future CMOS processes and possible ways to maintain performance

A digital high-dynamic-range CMOS image sensor with multi-integration and pixel readout request

A novel principle has been developed to build an ultra wide dynamic range digital CMOS image sensor. Multiple integrations are used to achieve the required dynamic. Its innovative readout system allows a direct capture of the final image from the different exposure time with no need of external reconstruction. The sensor readout system is entirely digital, implementing an in-pixel ADC. Realized in the STMicroelectronics 0.13μm CMOS standard technology, the 10μm x 10μm pixels contain 42 transistors with a fill factor of 25%. The sensor is able to capture more than 120dB dynamic range scenes at video rate

Low power CMOS iImage sensor for face recognition

Imaging system is suitable for different purposes, depending upon their final application. Digital cameras, camcorders, webcams, security cameras or infrared (IR) cameras are well-known imaging systems. For complementary metal oxide semiconductor (CMOS) image sensors, its performance is more promising compared to charged coupled device (CCD) due to its low power consumption, low cost, and on chip functionality and compatibility with standard CMOS technology [1]. In face recognition mode, three dimensional cameras replaced two-dimensional images to measure the object size, distance and shape with time-of-flight (TOF) cameras. Depth information can be extracted to be compared with database [2]. Therefore, CMOS image sensor with its architecture on pixel array, signal processors, row and column selector and timing control [3] will be the main key

A Fully Differential CMOS Potentiostat

A CMOS potentiostat for chemical sensing in a noisy environment is presented. The potentiostat measures bidirectional electrochemical redox currents proportional to the concentration of a chemical down to pico-ampere range. The fully differential architecture with differential recording electrodes suppresses the common mode interference. A 200μm×200μm prototype was fabricated in a standard 0.35μm standard CMOS technology and yields a 70dB dynamic range. The in-channel analog-to-digital converter (ADC) performs 16-bit current-tofrequency quantization. The integrated potentiostat functionality is validated in electrical and electrochemical experiments

A high dynamic range digital LinLog CMOS image sensor architecture based on Event Readout of pixels and suitable for low voltage operation

Several approaches have been developed to extend the dynamic range of image sensor in order to keep all the information content of natural scenes covering a very broad range of illumination. Digital CMOS image sensor are especially well suited to wide dynamic range imaging by implementing dual sampling, multiple exposure methods using either column or in pixel ADC, or Address Event Representation. A new architecture of digital high dynamic range CMOS image sensor, suitable for low voltage operation, has been developed that implements a built-in dynamic compression function targeted to LinLog behavior, by combining an event based readout of pixels, the use of multiple integrations per frame and the coding of pixel values using the mantissa-exponent principle, to achieve the dynamic range extension

High performances monolithic CMOS detectors for space applications

During the last 10 years, research about CMOS image sensors (also called APS -Active Pixel Sensors) has been intensively carried out, in order to offer an alternative to CCDs as image sensors. This is particularly the case for space applications as CMOS image sensors feature characteristics which are obviously of interest for flight hardware: parallel or semi-parallel architecture, on chip control and processing electronics, low power dissipation, high level ofradiation tolerance... Many image sensor companies, institutes and laboratories have demonstrated the compatibility of CMOS image sensors with consumer applications: micro-cameras, video-conferencing, digital-still cameras. And recent designs have shown that APS is getting closer to the CCD in terms ofperformance level. However, the large majority ofthe existing products do not offer the specific features which are required for many space applications. ASTRI1JM and SUPAERO/CIMI have decided to work together in view of developing CMOS image sensors dedicated to space business. After a brief presentation of the team organisation for space image sensor design and production, the latest results of a high performances 512x512 pixels CMOS device characterisation are presented with emphasis on the achieved electro-optical performance. Finally, the on going and short-term coming activities of the team are discussed