IGBT Avalanche Current Filamentaion Ratio: Precise Simulations on Mesh and Structure Effect

Current filamentaion effect with dynamic avalanche during turn-off transient in IGBT has been discussed for years. In the prior papers, the possibility of device failure has been reported based on TCAD simulation and simulation results have shown that variety of filamentation phenomena exist for conditions assumed in each simulation. It is discussed in this paper, for the first time, that the relationship of filamentation current concentration strength to device design parameters and categorizes filamentation phenomena, introducing current filamentation ratio (CFR). In the paper, guidelines for appropriate mesh pattern selection are also described to ensure the validity of simulation results.ISPSD 2016 28th International Symposium on Power Semiconductor Devices and ICs., Jun 12-16, 2016, Žofín Palace, Prague, Czech Republi

IGBT Avalanche Current Filamentaion Ratio: Precise Simulations on Mesh and Structure Effect

ISPSD 2016 28th International Symposium on Power Semiconductor Devices and ICs., Jun 12-16, 2016, Žofín Palace, Prague, Czech RepublicCurrent filamentaion effect with dynamic avalanche during turn-off transient in IGBT has been discussed for years. In the prior papers, the possibility of device failure has been reported based on TCAD simulation and simulation results have shown that variety of filamentation phenomena exist for conditions assumed in each simulation. It is discussed in this paper, for the first time, that the relationship of filamentation current concentration strength to device design parameters and categorizes filamentation phenomena, introducing current filamentation ratio (CFR). In the paper, guidelines for appropriate mesh pattern selection are also described to ensure the validity of simulation results