1,126 research outputs found

    A Wideband Inductorless CMOS Front-End for Software Defined

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    The number of wireless communication links is witnessing tremendous growth and new standards are being introduced at high pace. These standards heavily rely on digital signal processing, making CMOS the first technology of choice. However, RF CMOS circuit development is costly and time consuming due to mask costs and design iterations. This pleads for a Software Defined Radio approach, in which one piece of flexible radio hardware is re-used for different applications and standards, downloadable and under software control. To the best of our knowledge, little work has been done in this field based on CMOS technology. Recently, a bipolar downconverter front-end has been proposed [1]. In CMOS, only wideband low-noise amplifiers have been proposed, and some CMOS tuner ICs for satellite reception (which have less stringent noise requirements because they are preceded by an outdoor low-noise converter). This paper presents a wideband RF downconverter frontend in 0.18 um CMOS (also published in [2]), designed in the context of a research project exploring the feasibility of software defined radio, using a combined Bluetooth/WLAN receiver as a vehicle. Usually, RF receivers are optimised for low power consumption. In contrast, we have taken the approach to optimise for flexibility. The paper discusses the main system and circuit design choices, and assesses the achievable performance via measurements on a front-end implemented in 0.18um CMOS. The flexible design achieves a 0.2-2.2 GHz -3 dB bandwidth, a gain of 25 dB with 6 dB noise figure and +1 dBm IIP3

    A wideband high-linearity RF receiver front-end in CMOS

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    This paper presents a wideband high-linearity RF receiver-front-end, implemented in standard 0.18 /spl mu/m CMOS technology. The design employs a noise-canceling LNA in combination with two passive mixers, followed by lowpass-filtering and amplification at IF. The achieved bandwidth is >2 GHz, with a noise figure of 6.5 dB, +1 dBm IIP/sub 3/, +34.5 dBm IIP/sub 2/ and <50 kHz 1/f-noise corner frequency

    Architectures for ku-band broadband airborne satellite communication antennas

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    This paper describes different architectures for a broadband antenna for satellite communication on aircraft. The antenna is a steerable (conformal) phased array antenna in Ku-band (receive-only). First the requirements for such a system are addressed. Subsequently a number of potential architectures are discussed in detail: a) an architecture with only optical true time delays, b) an architecture with optical phase shifters and optical true time delays and c) an architecture with optical true time delays and RF phase\ud shifters (or RF true time delays). The last two architectures use sub-arrays to reduce complexity of the antenna system. The advantages and disadvantages of the different architectures are evaluated and an optimal architecture is selected

    Design and implementation of frequency synthesizers for 3-10 ghz mulitband ofdm uwb communication

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    The allocation of frequency spectrum by the FCC for Ultra Wideband (UWB) communications in the 3.1-10.6 GHz has paved the path for very high data rate Gb/s wireless communications. Frequency synthesis in these communication systems involves great challenges such as high frequency and wideband operation in addition to stringent requirements on frequency hopping time and coexistence with other wireless standards. This research proposes frequency generation schemes for such radio systems and their integrated implementations in silicon based technologies. Special emphasis is placed on efficient frequency planning and other system level considerations for building compact and practical systems for carrier frequency generation in an integrated UWB radio. This work proposes a frequency band plan for multiband OFDM based UWB radios in the 3.1-10.6 GHz range. Based on this frequency plan, two 11-band frequency synthesizers are designed, implemented and tested making them one of the first frequency synthesizers for UWB covering 78% of the licensed spectrum. The circuits are implemented in 0.25µm SiGe BiCMOS and the architectures are based on a single VCO at a fixed frequency followed by an array of dividers, multiplexers and single sideband (SSB) mixers to generate the 11 required bands in quadrature with fast hopping in much less than 9.5 ns. One of the synthesizers is integrated and tested as part of a 3-10 GHz packaged receiver. It draws 80 mA current from a 2.5 V supply and occupies an area of 2.25 mm2. Finally, an architecture for a UWB synthesizer is proposed that is based on a single multiband quadrature VCO, a programmable integer divider with 50% duty cycle and a single sideband mixer. A frequency band plan is proposed that greatly relaxes the tuning range requirement of the multiband VCO and leads to a very digitally intensive architecture for wideband frequency synthesis suitable for implementation in deep submicron CMOS processes. A design in 130nm CMOS occupies less than 1 mm2 while consuming 90 mW. This architecture provides an efficient solution in terms of area and power consumption with very low complexity

    Efficient and Linear CMOS Power Amplifier and Front-end Design for Broadband Fully-Integrated 28-GHz 5G Phased Arrays

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    Demand for data traffic on mobile networks is growing exponentially with time and on a global scale. The emerging fifth-generation (5G) wireless standard is being developed with millimeter-wave (mm-Wave) links as a key technological enabler to address this growth by a 2020 time frame. The wireless industry is currently racing to deploy mm-Wave mobile services, especially in the 28-GHz band. Previous widely-held perceptions of fundamental propagation limitations were overcome using phased arrays. Equally important for success of 5G is the development of low-power, broadband user equipment (UE) radios in commercial-grade technologies. This dissertation demonstrates design methodologies and circuit techniques to tackle the critical challenge of key phased array front-end circuits in low-cost complementary metal oxide semiconductor (CMOS) technology. Two power amplifier (PA) proof-of-concept prototypes are implemented in deeply scaled 28- nm and 40-nm CMOS processes, demonstrating state-of-the-art linearity and efficiency for extremely broadband communication signals. Subsequently, the 40 nm PA design is successfully embedded into a low-power fully-integrated transmit-receive front-end module. The 28 nm PA prototype in this dissertation is the first reported linear, bulk CMOS PA targeting low-power 5G mobile UE integrated phased array transceivers. An optimization methodology is presented to maximizing power added efficiency (PAE) in the PA output stage at a desired error vector magnitude (EVM) and range to address challenging 5G uplink requirements. Then, a source degeneration inductor in the optimized output stage is shown to further enable its embedding into a two-stage transformer-coupled PA. The inductor helps by broadening inter-stage impedance matching bandwidth, and helping to reduce distortion. Designed and fabricated in 1P7M 28 nm bulk CMOS and using a 1 V supply, the PA achieves +4.2 dBm/9% measured Pout/PAE at −25 dBc EVM for a 250 MHz-wide, 64-QAM orthogonal frequency division multiplexing (OFDM) signal with 9.6 dB peak-to-average power ratio (PAPR). The PA also achieves 35.5%/10% PAE for continuous wave signals at saturation/9.6dB back-off from saturation. To the best of the author’s knowledge, these are the highest measured PAE values among published K- and K a-band CMOS PAs to date. To drastically extend the communication bandwidth in 28 GHz-band UE devices, and to explore the potential of CMOS technology for more demanding access point (AP) devices, the second PA is demonstrated in a 40 nm process. This design supports a signal radio frequency bandwidth (RFBW) >3× the state-of-the-art without degrading output power (i.e. range), PAE (i.e. battery life), or EVM (i.e. amplifier fidelity). The three-stage PA uses higher-order, dual-resonance transformer matching networks with bandwidths optimized for wideband linearity. Digital gain control of 9 dB range is integrated for phased array operation. The gain control is a needed functionality, but it is largely absent from reported high-performance mm-Wave PAs in the literature. The PA is fabricated in a 1P6M 40 nm CMOS LP technology with 1.1 V supply, and achieves Pout/PAE of +6.7 dBm/11% for an 8×100 MHz carrier aggregation 64-QAM OFDM signal with 9.7 dB PAPR. This PA therefore is the first to demonstrate the viability of CMOS technology to address even the very challenging 5G AP/downlink signal bandwidth requirement. Finally, leveraging the developed PA design methodologies and circuits, a low power transmit-receive phased array front-end module is fully integrated in 40 nm technology. In transmit-mode, the front-end maintains the excellent performance of the 40 nm PA: achieving +5.5 dBm/9% for the same 8×100 MHz carrier aggregation signal above. In receive-mode, a 5.5 dB noise figure (NF) and a minimum third-order input intercept point (IIP₃) of −13 dBm are achieved. The performance of the implemented CMOS frontend is comparable to state-of-the-art publications and commercial products that were very recently developed in silicon germanium (SiGe) technologies for 5G communication
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