3 research outputs found
Energy Saving Techniques for Phase Change Memory (PCM)
In recent years, the energy consumption of computing systems has increased
and a large fraction of this energy is consumed in main memory. Towards this,
researchers have proposed use of non-volatile memory, such as phase change
memory (PCM), which has low read latency and power; and nearly zero leakage
power. However, the write latency and power of PCM are very high and this,
along with limited write endurance of PCM present significant challenges in
enabling wide-spread adoption of PCM. To address this, several
architecture-level techniques have been proposed. In this report, we review
several techniques to manage power consumption of PCM. We also classify these
techniques based on their characteristics to provide insights into them. The
aim of this work is encourage researchers to propose even better techniques for
improving energy efficiency of PCM based main memory.Comment: Survey, phase change RAM (PCRAM
Architectural Techniques for Multi-Level Cell Phase Change Memory Based Main Memory
Phase change memory (PCM) recently has emerged as a promising technology to meet the fast growing demand for large capacity main memory in modern computing systems. Multi-level cell (MLC) PCM storing multiple bits in a single cell offers high density with low per-byte fabrication cost. However, PCM suffers from long write latency, short cell endurance, limited write throughput and high peak power, which makes it challenging to be integrated in the memory hierarchy.
To address the long write latency, I propose write truncation to reduce the number of write iterations with the assistance of an extra error correction code (ECC). I also propose form switch (FS) to reduce the storage overhead of the ECC. By storing highly compressible lines in single level cell (SLC) form, FS improves read latency as well.
To attack the short cell endurance and large peak power, I propose elastic RESET (ER) to construct triple-level cell PCM. By reducing RESET energy, ER significantly reduces peak power and prolongs PCM lifetime.
To improve the write concurrency, I propose fine-grained write power budgeting (FPB) observing a global power budget and regulates power across write iterations according to the step-down power demand of each iteration. A global charge pump is also integrated onto a DIMM to boost power for hot PCM chips while staying within the global power budget.
To further reduce the peak power, I propose intra-write RESET scheduling distributing cell RESET initializations in the whole write operation duration, so that the on-chip charge pump size can also be reduced