Coupling-Based Resistive-Open Defects in TAS-MRAM Architectures

International audienceThermally Assisted Switching Magnetic Random Access Memory (TAS-MRAM) is an emerging technology that offers several advantages compared to existing non-volatile memory technologies. In this paper we show how coupling faults induced by resistive-open defects impact the TAS-MRAM architecture. Results shows that read and write operations may be affected these defects and may induce single and double cell faulty behaviors