Theory of Orbital Kondo Effect with Assisted Hopping in Strongly Correlated Electron Systems: Parquet Equations, Superconductivity and Mass Enhancement

Orbital Kondo effect is treated in a model, where additional to the conduction band there are localized orbitals close to the Fermi energy. If the hopping between the conduction band and the localized heavy orbitals depends on the occupation of the atomic orbitals in the conduction band then orbital Kondo correlation occurs. The noncommutative nature of the coupling required for the Kondo effect is formally due to the form factors associated with the assisted hopping which in the momentum representation depends on the momenta of the conduction electrons involved. The leading logarithmic vertex corrections are due to the local Coulomb interaction between the electrons on the heavy orbital and in the conduction band. The renormalized vertex functions are obtained as a solution of a closed set of differential equations and they show power behavior. The amplitude of large renormalization is determined by an infrared cutoff due to finite energy and dispersion of the heavy particles. The enhanced assisted hopping rate results in mass enhancement and attractive interaction in the conduction band. The superconductivity transition temperature calculated is largest for intermediate mass enhancement, $m^*/m \approx 2-3$. For larger mass enhancement the small one particle weight ($Z$) in the Green's function reduces the transition temperature which may be characteristic for otherComment: 32 pages, RevTeX 3.0, figures on reques

Charge Transport in Manganites: Hopping Conduction, the Anomalous Hall Effect and Universal Scaling

The low-temperature Hall resistivity \rho_{xy} of La_{2/3}A_{1/3}MnO_3 single crystals (where A stands for Ca, Pb and Ca, or Sr) can be separated into Ordinary and Anomalous contributions, giving rise to Ordinary and Anomalous Hall effects, respectively. However, no such decomposition is possible near the Curie temperature which, in these systems, is close to metal-to-insulator transition. Rather, for all of these compounds and to a good approximation, the \rho_{xy} data at various temperatures and magnetic fields collapse (up to an overall scale), on to a single function of the reduced magnetization m=M/M_{sat}, the extremum of this function lying at m~0.4. A new mechanism for the Anomalous Hall Effect in the inelastic hopping regime, which reproduces these scaling curves, is identified. This mechanism, which is an extension of Holstein's model for the Ordinary Hall effect in the hopping regime, arises from the combined effects of the double-exchange-induced quantal phase in triads of Mn ions and spin-orbit interactions. We identify processes that lead to the Anomalous Hall Effect for localized carriers and, along the way, analyze issues of quantum interference in the presence of phonon-assisted hopping. Our results suggest that, near the ferromagnet-to-paramagnet transition, it is appropriate to describe transport in manganites in terms of carrier hopping between states that are localized due to combined effect of magnetic and non-magnetic disorder. We attribute the qualitative variations in resistivity characteristics across manganite compounds to the differing strengths of their carrier self-trapping, and conclude that both disorder-induced localization and self-trapping effects are important for transport.Comment: 29 pages, 20 figure