35 research outputs found

    Can deep-sub-micron device noise be used as the basis for probabilistic neural computation?

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    This thesis explores the potential of probabilistic neural architectures for computation with future nanoscale Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). In particular, the performance of a Continuous Restricted Boltzmann Machine {CRBM) implemented with generated noise of Random Telegraph Signal (RTS) and 1/ f form has been studied with reference to the 'typical' Gaussian implementation. In this study, a time domain RTS based noise analysis capability has been developed based upon future nanoscale MOSFETs, to represent the effect of nanoscale MOSFET noise on circuit implementation in particular the synaptic analogue multiplier which is subsequently used to implement stochastic behaviour of the CRBM. The result of this thesis indicates little degradation in performance from that of the typical Gaussian CRBM. Through simulation experiments, the CRBM with nanoscale MOSFET noise shows the ability to reconstruct training data, although it takes longer to converge to equilibrium. The results in this thesis do not prove that nanoscale MOSFET noise can be exploited in all contexts and with all data, for probabilistic computation. However, the result indicates, for the first time, that nanoscale MOSFET noise has the potential to be used for probabilistic neural computation hardware implementation. This thesis thus introduces a methodology for a form of technology-downstreaming and highlights the potential of probabilistic architecture for computation with future nanoscale MOSFETs

    Fiabilisation de convertisseurs analogique-numérique à modulation Sigma-Delta

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    This thesis concentrates on reliability-aware methodology development, reliability analysis based on simulation as well as failure prediction of CMOS 65nm analog and mixed signal (AMS) ICs. Sigma-Delta modulators are concerned as the object of reliability study at system level. A hierarchical statistical approach for reliability is proposed to analysis the performance of Sigma-Delta modulators under ageing effects and process variations. Statistical methods are combined into this analysis flow.Ce travail de thèse a porté sur des problèmes de fiabilité de circuits intégrés en technologie CMOS 65 nm, en particulier sur la conception en vue de la fiabilité, la simulation et l'amélioration de la fiabilité. Les mécanismes dominants de vieillissement HCI et NBTI ainsi que la variation du processus ont été étudiés et évalués quantitativement au niveau du circuit et au niveau du système. Ces méthodes ont été appliquées aux modulateurs Sigma-Delta afin de déterminer la fiabilité de ce type de composant qui est très utilisé

    Fiabilisation de Convertisseurs Analogique-Num´erique a Modulation Sigma-Delta

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    Due to the continuously scaling down of CMOS technology, system-on-chips (SoCs) reliability becomes important in sub-90 nm CMOS node. Integrated circuits and systems applied to aerospace, avionic, vehicle transport and biomedicine are highly sensitive to reliability problems such as ageing mechanisms and parametric process variations. Novel SoCs with new materials and architectures of high complexity further aggravate reliability as a critical aspect of process integration. For instance, random and systematic defects as well as parametric process variations have a large influence on quality and yield of the manufactured ICs, right after production. During ICs usage time, time-dependent ageing mechanisms such as negative bias temperature instability (NBTI) and hot carrier injection (HCI) can significantly degrade ICs performance.La fiabilit´e des ICs est d´efinie ainsi : la capacit´e d’un circuit ou un syst`eme int´egr´e `amaintenir ses param`etres durant une p´eriode donn´ee sous des conditions d´efinies. Les rapportsITRS 2011 consid`ere la fiabilit´e comme un aspect critique du processus d’int´egration.Par cons´equent, il faut faire appel des m´ethodologies innovatrices prenant en comptela fiabilit´e afin d’assurer la fonctionnalit´e du SoCs et la fiabilit´e dans les technologiesCMOS `a l’´echelle nanom´etrique. Cela nous permettra de d´evelopper des m´ethodologiesind´ependantes du design et de la technologie CMOS, en revanche, sp´ecialis´ees en fiabilit´e

    High-speed Low-voltage CMOS Flash Analog-to-Digital Converter for Wideband Communication System-on-a-Chip

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    With higher-level integration driven by increasingly complex digital systems and downscaling CMOS processes available, system-on-a-chip (SoC) is an emerging technology of low power, high cost effectiveness and high reliability and is exceedingly attractive for applications in high-speed data conversion wireless and wideband communication systems. This research presents a novel ADC comparator design methodology; the speed and performance of which is not restricted by the supply voltage reduction and device linearity deterioration in scaling-down CMOS processes. By developing a dynamic offset suppression technique and a circuit optimization method, the comparator can achieve a 3 dB frequency of 2 GHz in 130 nanometer (nm) CMOS process. Combining this new comparator design and a proposed pipelined thermometer-Gray- binary encoder designed by the DCVSPG logic, a high-speed, low-voltage clocked-digital- comparator (CDC) pipelined CMOS flash ADC architecture is proposed for wideband communication SoC. This architecture has advantages of small silicon area, low power, and low cost. Three CDC-based pipelined CMOS flash ADCs were implemented in 130 nm CMOS process and their experimental results are reported: 1. 4-b, 2.5-GSPS ADC: SFDR of 21.48-dB, SNDR of 15.99-dB, ENOB of 2.4-b, ERBW of 1-GHz, power of 7.9-mW, and area of 0.022-mm2. 2. 4-b, 4-GSPS ADC: SFDR of 25-dB, SNDR of 18.6-dB, ENOB of 2.8-b, ERBW of 2-GHz, power of 11-mW. 3. 6-b, 4-GSPS ADC: SFDR of 48-dB at a signal frequency of 11.72-MHz, SNDR of 34.43-dB, ENOB of 5.4-b, power of 28-mW. An application of the proposed CDC-based pipelined CMOS flash ADC is 1-GHz bandwidth, 2.5-GSPS digital receiver on a chip. To verify the performance of the receiver, a mixed-signal block-level simulation and verification flow was built in Cadence AMS integrated platform. The verification results of the digital receiver using a 4-b 2.5-GSPS CDC-based pipelined CMOS ADC, a 256-point, 12-point kernel function FFT and a frequency detection logic show that two tone signals up to 1125 MHz can be detected and discriminated. A notable contribution of this research is that the proposed ADC architecture and the comparator design with dynamic offset suppression and optimization are extremely suitable for future VDSM CMOS processes and make all-digital receiver SoC design practical

    A Framework for Noise Analysis and Verification of Analog Circuits

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    Analog circuit design and verification face significant challenges due to circuit complexity and short market windows. In particular, the influence of technology parameters on circuits, noise modeling and verification still remain a priority for many applications. Noise could be due to unwanted interaction between the various circuit blocks or it could be inherited from the circuit elements. Current industrial designs rely heavily on simulation techniques, but ensuring the correctness of such designs under all circumstances usually becomes impractically expensive. In this PhD thesis, we propose a methodology for modeling and verification of analog designs in the presence of noise and process variation using run-time verification methods. Verification based on run-time techniques employs logical or statistical monitors to check if an execution (simulation) of the design model violates the design specifications (properties). In order to study the random behavior of noise, we propose an approach based on modeling the designs using stochastic differential equations (SDE) in the time domain. Then, we define assertion and statistical verification methods in a MATLAB SDE simulation framework for monitoring properties of interest in order to detect errors. In order to overcome some of the drawbacks associated with monitoring techniques, we define a pattern matching based verification method for qualitative estimation of the simulation traces. We illustrate the efficiency of the proposed methods on different benchmark circuits

    Journal of Telecommunications and Information Technology, 2005, nr 1

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    A Dual-Point technique for the entire ID-VG characterization into subthreshold region under Random Telegraph Noise condition

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    A simple Dual-Point technique to measure the entire transfer characteristics (ID-VG) down to sub-threshold region in the nano-scaled MOSFET under Random Telegraph Noise (RTN) condition with either capturing or emitting one elementary charge by a trap in the gate dielectric is proposed. Its compatibility with the commercial semiconductor analyzer makes it a readily-usable tool for future RTN study. In this work, we use this technique to explore the VG dependence of RTN induced by a single trapped carrier in both n- and p- FETs
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