488 research outputs found
RowHammer: Reliability Analysis and Security Implications
As process technology scales down to smaller dimensions, DRAM chips become
more vulnerable to disturbance, a phenomenon in which different DRAM cells
interfere with each other's operation. For the first time in academic
literature, our ISCA paper exposes the existence of disturbance errors in
commodity DRAM chips that are sold and used today. We show that repeatedly
reading from the same address could corrupt data in nearby addresses. More
specifically: When a DRAM row is opened (i.e., activated) and closed (i.e.,
precharged) repeatedly (i.e., hammered), it can induce disturbance errors in
adjacent DRAM rows. This failure mode is popularly called RowHammer. We tested
129 DRAM modules manufactured within the past six years (2008-2014) and found
110 of them to exhibit RowHammer disturbance errors, the earliest of which
dates back to 2010. In particular, all modules from the past two years
(2012-2013) were vulnerable, which implies that the errors are a recent
phenomenon affecting more advanced generations of process technology.
Importantly, disturbance errors pose an easily-exploitable security threat
since they are a breach of memory protection, wherein accesses to one page
(mapped to one row) modifies the data stored in another page (mapped to an
adjacent row).Comment: This is the summary of the paper titled "Flipping Bits in Memory
Without Accessing Them: An Experimental Study of DRAM Disturbance Errors"
which appeared in ISCA in June 201
Architectural Techniques to Enable Reliable and Scalable Memory Systems
High capacity and scalable memory systems play a vital role in enabling our
desktops, smartphones, and pervasive technologies like Internet of Things
(IoT). Unfortunately, memory systems are becoming increasingly prone to faults.
This is because we rely on technology scaling to improve memory density, and at
small feature sizes, memory cells tend to break easily. Today, memory
reliability is seen as the key impediment towards using high-density devices,
adopting new technologies, and even building the next Exascale supercomputer.
To ensure even a bare-minimum level of reliability, present-day solutions tend
to have high performance, power and area overheads. Ideally, we would like
memory systems to remain robust, scalable, and implementable while keeping the
overheads to a minimum. This dissertation describes how simple cross-layer
architectural techniques can provide orders of magnitude higher reliability and
enable seamless scalability for memory systems while incurring negligible
overheads.Comment: PhD thesis, Georgia Institute of Technology (May 2017
An Experimental Analysis of RowHammer in HBM2 DRAM Chips
RowHammer (RH) is a significant and worsening security, safety, and
reliability issue of modern DRAM chips that can be exploited to break memory
isolation. Therefore, it is important to understand real DRAM chips' RH
characteristics. Unfortunately, no prior work extensively studies the RH
vulnerability of modern 3D-stacked high-bandwidth memory (HBM) chips, which are
commonly used in modern GPUs.
In this work, we experimentally characterize the RH vulnerability of a real
HBM2 DRAM chip. We show that 1) different 3D-stacked channels of HBM2 memory
exhibit significantly different levels of RH vulnerability (up to 79%
difference in bit error rate), 2) the DRAM rows at the end of a DRAM bank (rows
with the highest addresses) exhibit significantly fewer RH bitflips than other
rows, and 3) a modern HBM2 DRAM chip implements undisclosed RH defenses that
are triggered by periodic refresh operations. We describe the implications of
our observations on future RH attacks and defenses and discuss future work for
understanding RH in 3D-stacked memories.Comment: To appear at DSN Disrupt 202
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