Characterization of Optical and Photoelectrical Properties of ZnO Crystals

We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are explained by defect-related and intrinsic mechanisms of recombination

Viral-Assisted Assembly and Photoelectric Response of Individual Au/CdSe Core–Shell Nanowires

Individual viral-templated Au/CdSe core–shell nanowires were synthesized and electrically characterized at room temperature. The Au nanowire cores were constructed using a genetically-modified filamentous M13 bacteriophage as a scaffold. Au nanoparticles were selectively bound to the viruses and used as seeds for electroless deposition, forming continuous Au nanowires. The nanocrystalline CdSe shell material which formed a coaxial heterojunction with the Au nanowire was created by electrodeposition. Electrical characterization of the Au nanowires revealed resistance variations associated with the viral-templated assembly process. The photoelectrical response of the core–shell nanowires was used to assess the interaction between the two component materials. A correlation was found between the dark current of the Au/CdSe core–shell nanowire and the magnitude of the collected photocurrent.Engineering and Applied Science

Improving the properties of Cu2O/ZnO heterojunction for photovoltaic application by graphene oxide

[EN] A p-Cu2O/n-ZnO heterojunction grown on fluorine-doped tin oxide (FTO) substrate is reported by a combined low-cost approach employing tape-casting of ZnO layer and subsequent electrochemical deposition of Cu2O layer. Graphene oxide (GO) nanosheets were employed as nanofiller for the ZnO matrix. Moreover, a ZnO buffer layer was inserted at the interface between the Cu2O and ZnO layers. The morphological, structural and photoelectrical characteristics of these heterojunction layers were investigated by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), Raman spectroscopy and photoelectrical current-voltage measurements. The results confirmed that the morphology and structure of ZnO layer were affected by the incorporation of GO nanosheets while the presence of buffer layer influenced the growth of Cu2O layer. This work shows the addition of GO and the use of ZnO buffer layer represent a viable approach towards improving the photoelectrical properties of the Cu2O/ZnO heterojunction cell.Financial support from Escuela Politecnica Nacional, Ecuador (project number PIMI 15-09) and Secretaria de Education Superior, Ciencia, Tecnologia e Innovation (SENESCYT) and Romanian National Authority for Scientific Research and Innovation, Romania CNCS - UEFISCDI (project number PN-III-P1-1.1-TE-2016-1544) is gratefully acknowledged.Rosas-Laverde, NM.; Pruna, AI.; Busquets Mataix, DJ.; Marí, B.; Cembrero Cil, J.; Salas Vicente, F.; Orozco-Messana, J. (2018). Improving the properties of Cu2O/ZnO heterojunction for photovoltaic application by graphene oxide. Ceramics International. 44(18):23045-23051. https://doi.org/10.1016/j.ceramint.2018.09.107S2304523051441

Flexible ultraviolet and ambient light sensor based on nanomaterial network fabricated by using selective and localized wet-chemical reactions

We report ZnO nanowire- and TiO_2 nanotube-based light sensors on flexible polymer substrates fabricated by localized hydrothermal synthesis and liquid phase deposition (LPD). This method realized simple and cost-effective in situ synthesis and integration of one-dimensional ZnO and TiO_2 nanomaterials. The fabricated sensor devices with ZnO nanowires and TiO_2 nanotubes show very high sensitivity and quick response to the ultraviolet (UV) and ambient light, respectively. In addition, our direct synthesis and integration method result in mechanical robustness under external loading such as static and cyclic bending because of the strong bonding between the nanomaterial and the electrode. By controlling the reaction time of the LPD process, the Ti/Zn ratio could be simply modulated and the spectral sensitivity to the light in the UV to visible range could be controlled

Synthesis And Characterization Of Zno Nanostructures Using Physical Vapor Deposition And Electrochemical Deposition For Optoelectronic Applications

ZnO nanostructures were grown by simple techniques to develop ZnO-based semiconductor photodetectors (PDs) for UV detection. This work employed two techniques, first, physical vapor deposition (PVD) and second, electrochemical deposition (ECD) techniques. In the PVD process, condensed Zn vapor is reacted with oxygen via vapor solid mechanism in three-zone tube furnace. The source material for PVD was pure Zn powder evaporated under different reaction conditions. Variations in the reaction time, substrates, and temperature in the furnace were found to control the growth mechanism and morphology of the ZnO nanostructures. For instance, high quality 1D ZnO nanostructures (Rods) were achieved on SiO2 using ZnO thin film as a buffer layer. Also, it was possible to grow tetrapods-like ZnO (TPs) and nanowires with different diameters and lengths as confirmed via SEM imaging. Photoluminescence (PL) measurements at room temperature showed a dominant peak related to a near-band-edge emission at approximately 376 nm with an additional peak related to green-band emission at approximately 520 nm.The highest near-band emission to green band emission ratio of 1D ZnO nanostructures grown on Si(111) could result from the high crystallinity of the fabricated nanostructure. Raman spectra measurements show four peaks, of which E2 high was the dominant peak. The shift in this dominant peak from 437 cm-1 provided accurate information of the stress in the ZnO film lattice

PAPER–BASED ZnO, ZnO:SnO2 AND SnO2 ULTRAVIOLET SENSORS

Three photoelectrical devices ZnO, ZnO:SnO2 and SnO2 are made on common pencil drawn circuit over a regular paper as substrate. These three sensors are well capable of detecting UV light and demonstrate features comparable to those of made with complex and expensive techniques. The responses of these sensors are different to the two UV spectra which are used as light sources. Explanation of sensors responses relates samples energy gap values with the UV wavelengths energies and intensities of the two applied UV spectra. Also the role of oxygen adsorption on the variations of samples resistances is discussed. Measurements comparing properties of the three sensors show better performance for ZnO sensor than the two other sensors; but with longer rise and fall times

Rendimiento de las celdas solares de heterounión ZnO/Cu2O modificadas con óxido de grafeno

[EN] We report the fabrication of ZnO/Cu2O heterojunction solar cells by means of the electrodeposition technique. The effect of electrolyte medium for the ZnO deposition, annealing treatment and interface modification with graphene oxide (GO) layer on the photoelectrical properties was analyzed. The electrochemical results indicated a markedly dependent Cu2O film electrodeposition on the GO-modified ZnO films. The modification of ZnO/Cu2O interface with GO nanosheets and annealing treatment results in improved interface properties, varying morphology and defects in ZnO lattice that further lead to enhanced performance of the proposed heterojunction solar cells. While the obtained results indicate that the properties of GO coating need to be tailored for improved performance, a synergetic effect of the GO addition and annealing treatment on the photoelectric properties of the electrodeposited heterojunction is achieved. (C) 2019 SECV. Published by Elsevier Espana, S.L.U.[ES] Se presenta la fabricación de celdas solares de heterounión de ZnO/Cu2O obtenidas mediante la técnica de electrodeposición. Se analizó el efecto del electrolito utilizado para la deposición de ZnO, el tratamiento térmico aplicado y la modificación de la interfaz con una capa de óxido de grafeno (GO) sobre las propiedades fotoeléctricas. Los resultados electroquímicos indicaron que existe una marcada dependencia de electrodeposición de capa de Cu2O sobre las películas de ZnO modificadas con GO. La modificación de la interfaz ZnO/Cu2O con nanohojas de GO y el tratamiento térmico dan como resultado mejoras en las propiedades de la interfaz, una morfología variable y defectos en la red de ZnO que conducen a un mejor rendimiento de las celdas solares de heterounión propuestas. Si bien los resultados obtenidos indican que las propiedades del recubrimiento de GO deben adaptarse para mejorar el rendimiento, se logra un efecto sinérgico del tratamiento de adición y térmico de GO aplicados sobre las propiedades fotoeléctricas de la heterounión electrodepositada.Financial support from Escuela Politécnica Nacional (project number PIMI 15-09), Secretaría de Educación Superior, Ciencia, Tecnología e Innovación (SENESCYT) of Ecuador, Romanian National Authority for Scientific Research and Innovation CNCS ¿ UEFISCDI (project number PN-III-P1-1.1-TE-2016-1544), Spanish government MINECO (projects MAT2016-75586-C4-2-P and MAT2015-71070-REDC) and from Generalitat Valenciana (project PROMETEO 2018/123 ¿ EFIMAT) is gratefully acknowledged. In addition, authors would like to thank to the Microscopy Service of UPV and Dr. David Busquets-Mataix for useful advice.Rosas-Laverde, NM.; Pruna, AI.; Cembrero Gil, J.; Orozco-Messana, J.; Manjón, F. (2019). Performance of graphene oxide-modified electrodeposited ZnO/Cu2O heterojunction solar cells. Boletín de la Sociedad Española de Cerámica y Vidrio. 58(6):263-273. https://doi.org/10.1016/j.bsecv.2019.06.002S263273586Kathalingam, A., Vikraman, D., Kim, H.-S., & Park, H. J. (2017). Facile fabrication of n-ZnO nanorods/p-Cu 2 O heterojunction and its photodiode property. Optical Materials, 66, 122-130. doi:10.1016/j.optmat.2017.01.051Panigrahi, S., Nunes, D., Calmeiro, T., Kardarian, K., Martins, R., & Fortunato, E. (2017). Oxide-Based Solar Cell: Impact of Layer Thicknesses on the Device Performance. ACS Combinatorial Science, 19(2), 113-120. doi:10.1021/acscombsci.6b00154Makhlouf, H., Weber, M., Messaoudi, O., Tingry, S., Moret, M., Briot, O., … Bechelany, M. (2017). Study of Cu 2 O\ZnO nanowires heterojunction designed by combining electrodeposition and atomic layer deposition. Applied Surface Science, 426, 301-306. doi:10.1016/j.apsusc.2017.07.130Cheng, K., Li, Q., Meng, J., Han, X., Wu, Y., Wang, S., … Du, Z. (2013). Interface engineering for efficient charge collection in Cu2O/ZnO heterojunction solar cells with ordered ZnO cavity-like nanopatterns. Solar Energy Materials and Solar Cells, 116, 120-125. doi:10.1016/j.solmat.2013.04.021Perng, D.-C., Hong, M.-H., Chen, K.-H., & Chen, K.-H. (2017). Enhancement of short-circuit current density in Cu2O/ZnO heterojunction solar cells. Journal of Alloys and Compounds, 695, 549-554. doi:10.1016/j.jallcom.2016.11.119Zamzuri, M., Sasano, J., Mohamad, F. B., & Izaki, M. (2015). Substrate type -Cu2O/-ZnO photovoltaic device prepared by photo-assisted electrodeposition. Thin Solid Films, 595, 136-141. doi:10.1016/j.tsf.2015.10.054Zhou, X., Xie, Y., Ma, J., Mi, H., Yang, J., Cheng, J., & Hoang, T. K. A. (2017). Synthesis of hierarchical structure cuprous oxide by a novel two-step hydrothermal method and the effect of its addition on the photovoltaic properties of ZnO-based dye-sensitized solar cells. Journal of Alloys and Compounds, 721, 8-17. doi:10.1016/j.jallcom.2017.05.334Messaoudi, O., Makhlouf, H., Souissi, A., Ben assaker I., Amiri, G., Bardaoui, A., … Chtourou, R. (2015). Synthesis and characterization of ZnO/Cu2O core–shell nanowires grown by two-step electrodeposition method. Applied Surface Science, 343, 148-152. doi:10.1016/j.apsusc.2015.03.045Jiang, X., Lin, Q., Zhang, M., He, G., & Sun, Z. (2015). Microstructure, optical properties, and catalytic performance of Cu2O-modified ZnO nanorods prepared by electrodeposition. Nanoscale Research Letters, 10(1). doi:10.1186/s11671-015-0755-0Hussain, S., Cao, C., Nabi, G., Khan, W. S., Usman, Z., & Mahmood, T. (2011). Effect of electrodeposition and annealing of ZnO on optical and photovoltaic properties of the p-Cu2O/n-ZnO solar cells. Electrochimica Acta, 56(24), 8342-8346. doi:10.1016/j.electacta.2011.07.017Kang, D., Lee, D., & Choi, K.-S. (2016). Electrochemical Synthesis of Highly Oriented, Transparent, and Pinhole-Free ZnO and Al-Doped ZnO Films and Their Use in Heterojunction Solar Cells. Langmuir, 32(41), 10459-10466. doi:10.1021/acs.langmuir.6b01902Kaur, J., Bethge, O., Wibowo, R. A., Bansal, N., Bauch, M., Hamid, R., … Dimopoulos, T. (2017). All-oxide solar cells based on electrodeposited Cu2O absorber and atomic layer deposited ZnMgO on precious-metal-free electrode. Solar Energy Materials and Solar Cells, 161, 449-459. doi:10.1016/j.solmat.2016.12.017Niu, W., Zhou, M., Ye, Z., & Zhu, L. (2016). Photoresponse enhancement of Cu2O solar cell with sulfur-doped ZnO buffer layer to mediate the interfacial band alignment. Solar Energy Materials and Solar Cells, 144, 717-723. doi:10.1016/j.solmat.2015.10.013Fujimoto, K., Oku, T., & Akiyama, T. (2013). Fabrication and Characterization of ZnO/Cu2O Solar Cells Prepared by Electrodeposition. Applied Physics Express, 6(8), 086503. doi:10.7567/apex.6.086503Bai, Z., Liu, J., Liu, F., & Zhang, Y. (2017). Enhanced photoresponse performance of self-powered UV–visible photodetectors based on ZnO/Cu2O/electrolyte heterojunctions via graphene incorporation. Journal of Alloys and Compounds, 726, 803-809. doi:10.1016/j.jallcom.2017.08.035Ke, N. H., Trinh, L. T. T., Phung, P. K., Loan, P. T. K., Tuan, D. A., Truong, N. H., … Hung, L. V. T. (2016). Changing the thickness of two layers: i-ZnO nanorods, p-Cu2O and its influence on the carriers transport mechanism of the p-Cu2O/i-ZnO nanorods/n-IGZO heterojunction. SpringerPlus, 5(1). doi:10.1186/s40064-016-2468-yGuo, D., & Ju, Y. (2016). Preparation of Cu2O/ZnO p-n Junction by Thermal Oxidation Method for Solar Cell Application. Materials Today: Proceedings, 3(2), 350-353. doi:10.1016/j.matpr.2016.01.019Jeong, S. S., Mittiga, A., Salza, E., Masci, A., & Passerini, S. (2008). Electrodeposited ZnO/Cu2O heterojunction solar cells. Electrochimica Acta, 53(5), 2226-2231. doi:10.1016/j.electacta.2007.09.030Wu, X., Liu, J., Huang, P., Huang, Z., Lai, F., Chen, G., … Qu, Y. (2017). Engineering crystal orientation of p-Cu2O on heterojunction solar cells. Surface Engineering, 33(7), 542-547. doi:10.1080/02670844.2017.1288342Rosas-Laverde, N. M., Pruna, A., Busquets-Mataix, D., Marí, B., Cembrero, J., Salas Vicente, F., & Orozco-Messana, J. (2018). Improving the properties of Cu2O/ZnO heterojunction for photovoltaic application by graphene oxide. Ceramics International, 44(18), 23045-23051. doi:10.1016/j.ceramint.2018.09.107Lin, Y., Li, X., Xie, D., Feng, T., Chen, Y., Song, R., … Zhu, H. (2013). Graphene/semiconductor heterojunction solar cells with modulated antireflection and graphene work function. Energy Environ. Sci., 6(1), 108-115. doi:10.1039/c2ee23538bPruna, A., Reyes-Tolosa, M. D., Pullini, D., Hernandez-Fenollosa, M. A., & Busquets-Mataix, D. (2015). Seed-free electrodeposition of ZnO bi-pods on electrophoretically-reduced graphene oxide for optoelectronic applications. Ceramics International, 41(2), 2381-2388. doi:10.1016/j.ceramint.2014.10.052Li, D., Cui, J., Li, H., Huang, D., Wang, M., & Shen, Y. (2016). Graphene oxide modified hole transport layer for CH3NH3PbI3 planar heterojunction solar cells. Solar Energy, 131, 176-182. doi:10.1016/j.solener.2016.02.049Riveros, G., Ramírez, D., Tello, A., Schrebler, R., Henríquez, R., & Gómez, H. (2012). Electrodeposition of ZnO from DMSO solution: influence of anion nature and its concentration in the nucleation and growth mechanisms. Journal of the Brazilian Chemical Society, 23(3), 505-512. doi:10.1590/s0103-50532012000300018Yilmaz, C., & Unal, U. (2017). Hydrothermal–electrochemical growth of heterogeneous ZnO: Co films. Applied Nanoscience, 7(7), 343-354. doi:10.1007/s13204-017-0579-6GÓMEZ, H., CANTILLANA, S., F.A., C., ALTAMIRANO, H., & BURGOS, A. (2014). TEMPLATE ASSISTED ELECTRODEPOSITION OF HIGHLY ORIENTED ZnO NANOWIRE ARRAYS AND THEIR INTEGRATION IN DYE SENSITIZED SOLAR CELLS. Journal of the Chilean Chemical Society, 59(2), 2447-2450. doi:10.4067/s0717-97072014000200010Cembrero, J., Perales, M., Mollar, M., & Marí, B. (2003). Obtención de columnas de ZnO. Variables a controlar (I). Boletín de la Sociedad Española de Cerámica y Vidrio, 42(6), 379-387. doi:10.3989/cyv.2003.v42.i6.626Oliveira, F. F., Proenca, M. P., Araújo, J. P., & Ventura, J. (2016). Electrodeposition of ZnO thin films on conducting flexible substrates. Journal of Materials Science, 51(12), 5589-5597. doi:10.1007/s10853-016-9850-6Londhe, P. U., & Chaure, N. B. (2017). Effect of pH on the properties of electrochemically prepared ZnO thin films. Materials Science in Semiconductor Processing, 60, 5-15. doi:10.1016/j.mssp.2016.12.005Mezine, Z., Kadri, A., Hamadou, L., Benbrahim, N., & Chaouchi, A. (2018). Electrodeposition of copper oxides (CuxOy) from acetate bath. Journal of Electroanalytical Chemistry, 817, 36-47. doi:10.1016/j.jelechem.2018.03.055Perng, D.-C., Chen, J.-W., Kao, T.-T., & Chang, R.-P. (2013). Cu 2 O growth characteristics on an array of ZnO nanorods for the nano-structured solar cells. Surface and Coatings Technology, 231, 261-266. doi:10.1016/j.surfcoat.2012.05.054Venkatesan, A., & Kannan, E. S. (2017). Highly ordered copper oxide (Cu 2 O) nanopillar arrays using template assisted electrodeposition technique and their temperature dependent electrical characteristics. Current Applied Physics, 17(5), 806-812. doi:10.1016/j.cap.2017.03.005Scharifker, B., & Hills, G. (1983). Theoretical and experimental studies of multiple nucleation. Electrochimica Acta, 28(7), 879-889. doi:10.1016/0013-4686(83)85163-9Lahmar, H., Setifi, F., Azizi, A., Schmerber, G., & Dinia, A. (2017). On the electrochemical synthesis and characterization of p-Cu2O/n-ZnO heterojunction. Journal of Alloys and Compounds, 718, 36-45. doi:10.1016/j.jallcom.2017.05.054Septina, W., Ikeda, S., Khan, M. A., Hirai, T., Harada, T., Matsumura, M., & Peter, L. M. (2011). Potentiostatic electrodeposition of cuprous oxide thin films for photovoltaic applications. Electrochimica Acta, 56(13), 4882-4888. doi:10.1016/j.electacta.2011.02.075Shi, B., Liu, B., Luo, J., Li, Y., Zheng, C., Yao, X., … Zhang, X. (2017). Enhanced light absorption of thin perovskite solar cells using textured substrates. Solar Energy Materials and Solar Cells, 168, 214-220. doi:10.1016/j.solmat.2017.04.038Pullini, D., Pruna, A., Zanin, S., & Mataix, D. B. (2011). High-Efficiency Electrodeposition of Large Scale ZnO Nanorod Arrays for Thin Transparent Electrodes. Journal of The Electrochemical Society, 159(2), E45-E51. doi:10.1149/2.093202jesPruna, A., Shao, Q., Kamruzzaman, M., Zapien, J. A., & Ruotolo, A. (2016). Optimized properties of ZnO nanorod arrays grown on graphene oxide seed layer by combined chemical and electrochemical approach. Ceramics International, 42(15), 17192-17201. doi:10.1016/j.ceramint.2016.08.011Manjón, F. J., Syassen, K., & Lauck, R. (2002). Effect of Pressure on Phonon Modes in Wurtzite Zinc Oxide. High Pressure Research, 22(2), 299-304. doi:10.1080/08957950212798Marí, B., Manjón, F. J., Mollar, M., Cembrero, J., & Gómez, R. (2006). Photoluminescence of thermal-annealed nanocolumnar ZnO thin films grown by electrodeposition. Applied Surface Science, 252(8), 2826-2831. doi:10.1016/j.apsusc.2005.04.024Kundu, S. (2014). A facile route for the formation of shape-selective ZnO nanoarchitectures with superior photo-catalytic activity. Colloids and Surfaces A: Physicochemical and Engineering Aspects, 446, 199-212. doi:10.1016/j.colsurfa.2013.12.035Pruna, A., Wu, Z., Zapien, J. A., Li, Y. Y., & Ruotolo, A. (2018). Enhanced photocatalytic performance of ZnO nanostructures by electrochemical hybridization with graphene oxide. Applied Surface Science, 441, 936-944. doi:10.1016/j.apsusc.2018.02.117Pan, X., Yang, M.-Q., & Xu, Y.-J. (2014). Morphology control, defect engineering and photoactivity tuning of ZnO crystals by graphene oxide – a unique 2D macromolecular surfactant. Physical Chemistry Chemical Physics, 16(12), 5589. doi:10.1039/c3cp55038aManjón, F. J., Marí, B., Serrano, J., & Romero, A. H. (2005). Silent Raman modes in zinc oxide and related nitrides. Journal of Applied Physics, 97(5), 053516. doi:10.1063/1.185622

Growth And Characterization Of Vertically Aligned Zno Nanorods Synthesized By Chemical Bath Deposition For Uv Photodetector Applications

The objectives of this study are to grow and characterize the structural, optical, and electrical properties of aligned ZnO nanorods, and to develop ultraviolet (UV) photodetectors using these ZnO nanorod arrays grown with optimized growth parameters. The study employed two different substrates for growing ZnO nanorod arrays; first, flexible polyethylene naphthalate (PEN) seeded ZnO and second, porous silicon (PS) seeded ZnO. Well-aligned ZnO nanorod arrays were grown on flexible PEN substrates at a low temperature by using the chemical bath deposition (CBD). The control of the diameter, length, density, and optical and structural properties of the ZnO nanorod arrays were systematically investigated by modifying the growth parameters, including the precursor concentration and growth duration. Vertically aligned ZnO nanorod arrays grown using a 0.050 M precursor concentration and 5 h growth duration had diameters ranging from 10 nm to 40 nm and exhibited the sharpest and most intense UV peak in the room temperature photoluminescence (PL) results compared with other samples. Next, high quality ZnO nanorod arrays were synthesized through the optimization of precursor concentration and growth duration by using CBD method on PS substrates, which were prepared via the photo electrochemical etching (PECE) method. The aligned ZnO nanorods grew perpendicular to the PS substrates and had average diameters and lengths ranging from 13 nm to 69 nm and from 85 nm to 208 nm, respectively

Characterisation and optimisation of hybrid polymer/metal oxide photovoltaic devices

Imperial Users onl

Development of solar cells based on AllnN/Si heterojunctions growth by RF-Sputtering

Hoy en día, los semiconductores III-Nitruros se están proponiendo para su aplicación en dispositivos electrónicos y optoelectrónicos debido a sus características únicas, como son su energía de gap, su alta estabilidad térmica y alta resistencia a la radiación. En ese sentido, las aleaciones de nitruro de aluminio e indio (AlInN) ofrecen un gran potencial para su uso como dispositivos fotovoltaicos dado que su energía de gap puede cubrir un amplio rango del espectro solar, yendo desde 0.7 eV (InN) hasta 6.2 eV (AlN), y además de las ya mencionadas resistencia a altas temperaturas y a la radiación. Además, a lo largo de las últimas décadas, los compuestos del grupo III-V se han desarrollado utilizando diferentes técnicas de crecimiento, como el crecimiento epitaxial por haces moleculares (MBE), la epitaxia en fase de vapor con precursores metalorgánicos (MOVPE) o la pulverización catódica. Esta tesis se centra en esta última técnica, que permite obtener dispositivos más baratos y con mayor área que otras técnicas de depósito y también permite el crecimiento en un amplio rango de temperaturas (en nuestro caso desde temperatura ambiente hasta valores por debajo de 650 ° C) y sustratos. A lo largo de esta tesis, se ha estudiado la influencia de varios parámetros de la heterounión basada en el AlInN y el silicio, como son la energía de gap del AlInN, su espesor y concentración de portadores, la recombinación en la superficie del silicio, densidad de defectos en la intercara y la calidad de oblea de Si, en sus propiedades fotoeléctricas mediante el uso del software Pc1d, con el objetivo de explorar su potencial como células solares a través del análisis y la optimización de dichos parámetros Además de ello, se ha estudiado el efecto de varios parámetros de depósito, como la temperatura de crecimiento o la potencia aplicada a los blancos de indio y aluminio, sobre las propiedades estructurales, morfológicas, eléctricas y ópticas de los compuestos AlxIn1-xN crecidos sobre sustratos de Si (111), Si (100) y zafiro; mostrando propiedades similares en ambos sustratos de silicio, independientemente de la orientación. Tras ello, se han estudiado las propiedades fotoeléctricas de los dispositivos basados en heterouniones AlxIn1-xN / Si en función de la temperatura de crecimiento y la potencia aplicada al blanco de Al. La curva I-V de los dispositivos revela la alta influencia de la temperatura de crecimiento en la eficiencia de conversión de los dispositivos.Nowadays III-Nitrides semiconductors are being proposed for electronic and optoelectronic devices due to their unique material characteristics, such as their wide direct bandgap, high thermal stability and high radiation hardness. Particularly, Aluminum Indium Nitride (AlInN) alloys offer great potential for photovoltaic devices thanks to their wide direct bandgap energy that covers the solar spectrum from 0.7 eV (InN) to 6.2 eV (AlN), and their superior resistance to high temperatures and high-energy particles. Besides, III-nitrides compounds has been grown using different deposition techniques, such as Molecular Beam Epitaxy (MBE), Metalorganic vapour phase epitaxy-(MOVPE) or Radio Frequency (RF) Sputtering. This thesis is focused on this latest technique, which allows obtaining cheaper and larger devices than other deposition techniques and also deposition in a wide range of temperatures (from room temperature to values below 650°C in our case) and substrates. Along this thesis, the influence of several parameters, such as AlInN bandgap energy, AlInN thickness and carrier concentration, silicon surface recombination, interface defects and Si wafer quality, on the photovoltaic properties of AlInN on silicon heterojunctions has been carried out using the Pc1d software, with the aim to explore their potential for solar cell devices through the analysis and optimization of the aforementioned parameters. Besides, the effect of several growth parameters, such as the deposition temperature or the power supply applied to the In and the Al targets, on the structural, morphological, electrical and optical properties of AlxIn1-xN compounds deposited on Si (111), Si (100) and sapphire substrates has been studied, showing similar properties of the AlxIn1-xN layers growth on both silicon substrates regardless the orientation. After that, the photoelectrical properties of solar cell devices based on AlxIn1-xN/Si heterojunctions has been studied as a function of the growth temperature and the Al power supply. Their J-V curve of the devices reveals the high influence of the growth temperature on the conversion efficiency of the devices