Automated characterization of TAS-MRAM test arrays

In this work the characterization results of 1kbit TAS-MRAM arrays obtained through RIFLE Automated Test Equipment of 1Kbit array are reported. Such ATE, ensuring flexibility in terms of signals and timing, allowed evaluating hysteresis and to perform 50k write cycles in a very limited time, getting a first insight on TAS-MRAM arrays performance and reliability

Reliability and Cell-to-Cell Variability of TAS-MRAM arrays under cycling conditions

The impact of 500k write cycles on 1kbits TASMRAM arrays has been evaluated by extracting a set of characteristic parameters describing the technology in terms of cell-to cell variability and switching reliability. The relationship between switching voltages and cell resistances has been investigated in order to define the most reliable working conditions