ToPoliNano: Nanoarchitectures Design Made Real

Many facts about emerging nanotechnologies are yet to be assessed. There are still major concerns, for instance, about maximum achievable device density, or about which architecture is best fit for a specific application. Growing complexity requires taking into account many aspects of technology, application and architecture at the same time. Researchers face problems that are not new per se, but are now subject to very different constraints, that need to be captured by design tools. Among the emerging nanotechnologies, two-dimensional nanowire based arrays represent promising nanostructures, especially for massively parallel computing architectures. Few attempts have been done, aimed at giving the possibility to explore architectural solutions, deriving information from extensive and reliable nanoarray characterization. Moreover, in the nanotechnology arena there is still not a clear winner, so it is important to be able to target different technologies, not to miss the next big thing. We present a tool, ToPoliNano, that enables such a multi-technological characterization in terms of logic behavior, power and timing performance, area and layout constraints, on the basis of specific technological and topological descriptions. This tool can aid the design process, beside providing a comprehensive simulation framework for DC and timing simulations, and detailed power analysis. Design and simulation results will be shown for nanoarray-based circuits. ToPoliNano is the first real design tool that tackles the top down design of a circuit based on emerging technologie

Design of Adiabatic MTJ-CMOS Hybrid Circuits

Low-power designs are a necessity with the increasing demand of portable devices which are battery operated. In many of such devices the operational speed is not as important as battery life. Logic-in-memory structures using nano-devices and adiabatic designs are two methods to reduce the static and dynamic power consumption respectively. Magnetic tunnel junction (MTJ) is an emerging technology which has many advantages when used in logic-in-memory structures in conjunction with CMOS. In this paper, we introduce a novel adiabatic hybrid MTJ/CMOS structure which is used to design AND/NAND, XOR/XNOR and 1-bit full adder circuits. We simulate the designs using HSPICE with 32nm CMOS technology and compared it with a non-adiabatic hybrid MTJ/CMOS circuits. The proposed adiabatic MTJ/CMOS full adder design has more than 7 times lower power consumtion compared to the previous MTJ/CMOS full adder

Energy challenges for ICT

The energy consumption from the expanding use of information and communications technology (ICT) is unsustainable with present drivers, and it will impact heavily on the future climate change. However, ICT devices have the potential to contribute signi - cantly to the reduction of CO2 emission and enhance resource e ciency in other sectors, e.g., transportation (through intelligent transportation and advanced driver assistance systems and self-driving vehicles), heating (through smart building control), and manu- facturing (through digital automation based on smart autonomous sensors). To address the energy sustainability of ICT and capture the full potential of ICT in resource e - ciency, a multidisciplinary ICT-energy community needs to be brought together cover- ing devices, microarchitectures, ultra large-scale integration (ULSI), high-performance computing (HPC), energy harvesting, energy storage, system design, embedded sys- tems, e cient electronics, static analysis, and computation. In this chapter, we introduce challenges and opportunities in this emerging eld and a common framework to strive towards energy-sustainable ICT

Why area might reduce power in nanoscale CMOS

In this paper we explore the relationship between power and area. By exploiting parallelism (and thus using more area) one can reduce the switching frequency allowing a reduction in VDD which results in a reduction in power. Under a scaling regime which allows threshold voltage to increase as VDD decreases we find that dynamic and subthreshold power loss in CMOS exhibit a dependence on area proportional to A(s-3)s/ while gate leakage power ? A(s-6)s/, and short circuit power ? A(s-8)s/. Thus, with the large number of devices at our disposal we can exploit techniques such as spatial computing, tailoring the program directly to the hardware, to overcome the negative effects of scaling. The value of s describes the effectiveness of the technique for a particular circuit and/or algorithm - for circuits that exhibit a value of s =3, power will be a constant or reducing function of area. We briefly speculate on how s might be influenced by a move to nanoscale technology

Towards Energy-Efficient and Reliable Computing: From Highly-Scaled CMOS Devices to Resistive Memories

The continuous increase in transistor density based on Moore\u27s Law has led us to highly scaled Complementary Metal-Oxide Semiconductor (CMOS) technologies. These transistor-based process technologies offer improved density as well as a reduction in nominal supply voltage. An analysis regarding different aspects of 45nm and 15nm technologies, such as power consumption and cell area to compare these two technologies is proposed on an IEEE 754 Single Precision Floating-Point Unit implementation. Based on the results, using the 15nm technology offers 4-times less energy and 3-fold smaller footprint. New challenges also arise, such as relative proportion of leakage power in standby mode that can be addressed by post-CMOS technologies. Spin-Transfer Torque Random Access Memory (STT-MRAM) has been explored as a post-CMOS technology for embedded and data storage applications seeking non-volatility, near-zero standby energy, and high density. Towards attaining these objectives for practical implementations, various techniques to mitigate the specific reliability challenges associated with STT-MRAM elements are surveyed, classified, and assessed herein. Cost and suitability metrics assessed include the area of nanomagmetic and CMOS components per bit, access time and complexity, Sense Margin (SM), and energy or power consumption costs versus resiliency benefits. In an attempt to further improve the Process Variation (PV) immunity of the Sense Amplifiers (SAs), a new SA has been introduced called Adaptive Sense Amplifier (ASA). ASA can benefit from low Bit Error Rate (BER) and low Energy Delay Product (EDP) by combining the properties of two of the commonly used SAs, Pre-Charge Sense Amplifier (PCSA) and Separated Pre-Charge Sense Amplifier (SPCSA). ASA can operate in either PCSA or SPCSA mode based on the requirements of the circuit such as energy efficiency or reliability. Then, ASA is utilized to propose a novel approach to actually leverage the PV in Non-Volatile Memory (NVM) arrays using Self-Organized Sub-bank (SOS) design. SOS engages the preferred SA alternative based on the intrinsic as-built behavior of the resistive sensing timing margin to reduce the latency and power consumption while maintaining acceptable access time