Low-power low-voltage chopped transconductance amplifier for noise and offset reduction

This paper describes the principle and design of a CMOS low-power, low-voltage, chopped transconductance amplifier, for noise and offset reduction in mixed analogue digital applications. The operation is based on chopping and dynamic element matching, to reduce noise and offset, without excessive increase of the charge injection residual offset. Experimental results show residual offsets of less than 150µV at 100kHz chopping frequency, a signal to noise ratio of 95dB, in audio band, for 100KHz chopping and a THD of -89dB. The power consumption is 594µW

A 24-GHz CMOS Front-End

This paper reports the first 24-GHz CMOS front-end in a 0.18-µm process. It consists of a low-noise amplifier (LNA) and a mixer and downconverts an RF input at 24GHz to an IF of 5 GHz. It has a power gain of 27.5 dB and an overall noise figure of 7.7 dB with an input return loss, S[sub]11 of 21 dB consuming 20 mA from a 1.5-V supply. The LNA achieves a power gain of 15 dB and a noise figure of 6 dB on 16 mA of dc current. The LNA’s input stage utilizes a common-gate with resistive feedthrough topology. The performance analysis of this topology predicts the experimental results with good accuracy

A 1.2-V 10- µW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From 70 °C to 125 °C

An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 ◦C (3¾) and a trimmed inaccuracy of ±0.2 ◦C (3¾) over the temperature range from −70 ◦C to 125 ◦C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 μA from a 1.2-V supply and occupies an area of 0.1 mm2

A 3 Gb/s optical detector in standard CMOS for 850 nm optical communication

This paper presents a monolithic optical detector, consisting of an integrated photodiode and a preamplifier in a standard 0.18-/spl mu/m CMOS technology. A data rate of 3 Gb/s at BER <10/sup -11/ was achieved for /spl lambda/=850 nm with 25-/spl mu/W peak-peak optical power. This data rate is more than four times than that of current state-of-the-art optical detectors in standard CMOS reported so far. High-speed operation is achieved without reducing circuit responsivity by using an inherently robust analog equalizer that compensates (in gain and phase) for the photodiode roll-off over more than three decades. The presented solution is applicable to various photodiode structures, wavelengths, and CMOS generations

A fully integrated 24-GHz phased-array transmitter in CMOS

This paper presents the first fully integrated 24-GHz phased-array transmitter designed using 0.18-/spl mu/m CMOS transistors. The four-element array includes four on-chip CMOS power amplifiers, with outputs matched to 50 /spl Omega/, that are each capable of generating up to 14.5 dBm of output power at 24 GHz. The heterodyne transmitter has a two-step quadrature up-conversion architecture with local oscillator (LO) frequencies of 4.8 and 19.2 GHz, which are generated by an on-chip frequency synthesizer. Four-bit LO path phase shifting is implemented in each element at 19.2 GHz, and the transmitter achieves a peak-to-null ratio of 23 dB with raw beam-steering resolution of 7/spl deg/ for radiation normal to the array. The transmitter can support data rates of 500 Mb/s on each channel (with BPSK modulation) and occupies 6.8 mm /spl times/ 2.1 mm of die area

Integrated phased array systems in silicon

Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-μm silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-μm CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications

A mixed-signal integrated circuit for FM-DCSK modulation

This paper presents a mixed-signal application-specific integrated circuit (ASIC) for a frequency-modulated differential chaos shift keying (FM-DCSK) communication system. The chip is conceived to serve as an experimental platform for the evaluation of the FM-DCSK modulation scheme, and includes several programming features toward this goal. The operation of the ASIC is herein illustrated for a data rate of 500 kb/s and a transmission bandwidth in the range of 17 MHz. Using signals acquired from the test platform, bit error rate (BER) estimations of the overall FM-DCSK communication link have been obtained assuming wireless transmission at the 2.4-GHz ISM band. Under all tested propagation conditions, including multipath effects, the system obtains a BER = 10-3 for Eb/No lower than 28 dB.Ministerio de Ciencia y Tecnología TIC2003-0235