Noise shaping Asynchronous SAR ADC based time to digital converter

Time-to-digital converters (TDCs) are key elements for the digitization of timing information in modern mixed-signal circuits such as digital PLLs, DLLs, ADCs, and on-chip jitter-monitoring circuits. Especially, high-resolution TDCs are increasingly employed in on-chip timing tests, such as jitter and clock skew measurements, as advanced fabrication technologies allow fine on-chip time resolutions. Its main purpose is to quantize the time interval of a pulse signal or the time interval between the rising edges of two clock signals. Similarly to ADCs, the performance of TDCs are also primarily characterized by Resolution, Sampling Rate, FOM, SNDR, Dynamic Range and DNL/INL. This work proposes and demonstrates 2nd order noise shaping Asynchronous SAR ADC based TDC architecture with highest resolution of 0.25 ps among current state of art designs with respect to post-layout simulation results. This circuit is a combination of low power/High Resolution 2nd Order Noise Shaped Asynchronous SAR ADC backend with simple Time to Amplitude converter (TAC) front-end and is implemented in 40nm CMOS technology. Additionally, special emphasis is given on the discussion on various current state of art TDC architectures.Electrical and Computer Engineerin

A fully integrated 24-GHz phased-array transmitter in CMOS

This paper presents the first fully integrated 24-GHz phased-array transmitter designed using 0.18-/spl mu/m CMOS transistors. The four-element array includes four on-chip CMOS power amplifiers, with outputs matched to 50 /spl Omega/, that are each capable of generating up to 14.5 dBm of output power at 24 GHz. The heterodyne transmitter has a two-step quadrature up-conversion architecture with local oscillator (LO) frequencies of 4.8 and 19.2 GHz, which are generated by an on-chip frequency synthesizer. Four-bit LO path phase shifting is implemented in each element at 19.2 GHz, and the transmitter achieves a peak-to-null ratio of 23 dB with raw beam-steering resolution of 7/spl deg/ for radiation normal to the array. The transmitter can support data rates of 500 Mb/s on each channel (with BPSK modulation) and occupies 6.8 mm /spl times/ 2.1 mm of die area

A 300-800MHz Tunable Filter and Linearized LNA applied in a Low-Noise Harmonic-Rejection RF-Sampling Receiver

A multiband flexible RF-sampling receiver aimed at software-defined radio is presented. The wideband RF sampling function is enabled by a recently proposed discrete-time mixing downconverter. This work exploits a voltage-sensing LNA preceded by a tunable LC pre-filter with one external coil to demonstrate an RF-sampling receiver with low noise figure (NF) and high harmonic rejection (HR). The second-order LC filter provides voltage pre-gain and attenuates the source noise aliasing, and it also improves the HR ratio of the sampling downconverter. The LNA consists of a simple amplifier topology built from inverters and resistors to improve the third-order nonlinearity via an enhanced voltage mirror technique. The RF-sampling receiver employs 8 times oversampling covering 300 to 800 MHz in two RF sub-bands. The chip is realized in 65 nm CMOS and the measured gain across the band is between 22 and 28 dB, while achieving a NF between 0.8 to 4.3 dB. The IIP2 varies between +38 and +49 dBm and the IIP3 between -14 dBm and -9 dBm, and the third and fifth order HR ratios are more than 60 dB. The LNA and downconverter consumes 6 mW, and the clock generator takes 12 mW at 800 MHz RF.\ud \u

Integrated phased array systems in silicon

Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-μm silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-μm CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications

A 1.2-V 10- µW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From 70 °C to 125 °C

An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 ◦C (3¾) and a trimmed inaccuracy of ±0.2 ◦C (3¾) over the temperature range from −70 ◦C to 125 ◦C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 μA from a 1.2-V supply and occupies an area of 0.1 mm2

Reconfigurable time interval measurement circuit incorporating a programmable gain time difference amplifier

PhD ThesisAs further advances are made in semiconductor manufacturing technology the performance of circuits is continuously increasing. Unfortunately, as the technology node descends deeper into the nanometre region, achieving the potential performance gain is becoming more of a challenge; due not only to the effects of process variation but also to the reduced timing margins between signals within the circuit creating timing problems. Production Standard Automatic Test Equipment (ATE) is incapable of performing internal timing measurements due, first to the lack of accessibility and second to the overall timing accuracy of the tester which is grossly inadequate. To address these issue ‘on-chip’ time measurement circuits have been developed in a similar way that built in self-test (BIST) evolved for ‘on-chip’ logic testing. This thesis describes the design and analysis of three time amplifier circuits. The analysis undertaken considers the operational aspects related to gain and input dynamic range, together with the robustness of the circuits to the effects of process, voltage and temperature (PVT) variations. The design which had the best overall performance was subsequently compared to a benchmark design, which used the ‘buffer delay offset’ technique for time amplification, and showed a marked 6.5 times improvement on the dynamic range extending this from 40 ps to 300ps. The new design was also more robust to the effects of PVT variations. The new time amplifier design was further developed to include an adjustable gain capability which could be varied in steps of approximately 7.5 from 4 to 117. The time amplifier was then connected to a 32-stage tapped delay line to create a reconfigurable time measurement circuit with an adjustable resolution range from 15 down to 0.5 ps and a dynamic range from 480 down to 16 ps depending upon the gain setting. The overall footprint of the measurement circuit, together with its calibration module occupies an area of 0.026 mm2 The final circuit, overall, satisfied the main design criteria for ‘on-chip’ time measurement circuitry, namely, it has a wide dynamic range, high resolution, robust to the effects of PVT and has a small area overhead.Umm Al-Qura University

A 6.0-mW 10.0-Gb/s Receiver With Switched-Capacitor Summation DFE

A low-power receiver with a one-tap decision feedback equalization (DFE) was fabricated in 90-nm CMOS technology. The speculative equalization is performed using switched-capacitor-based addition at the front-end sample-hold circuit. In order to further reduce the power consumption, an analog multiplexer is used in the speculation technique implementation. A quarter-rate-clocking scheme facilitates the use of low-power front-end circuitry and CMOS clock buffers. The receiver was tested over channels with different levels of ISI. The signaling rate with BER<10^-12 was significantly increased with the use of DFE for short- to medium-distance PCB traces. At 10-Gb/s data rate, the receiver consumes less than 6.0 mW from a 1.0-V supply. This includes the power consumed in all quarter-rate clock buffers, but not the power of a clock recovery loop. The input clock phase and the DFE taps are adjusted externally

TIME-DIFFERENCE CIRCUITS: METHODOLOGY, DESIGN, AND DIGITAL REALIZATION

This thesis presents innovations for a special class of circuits called Time Difference (TD) circuits. We introduce a signal processing methodology with TD signals that alters the target signal from a magnitude perspective to time interval between two time events and systematically organizes the primary TD functions abstracted from existing TD circuits and systems. The TD circuits draw attention from a broad range of application fields. In addition, highly evolved complementary metal-oxide-semiconductor (CMOS) technology suffers from various problems related to voltage and current amplitude signal processing methods. Compared to traditional analog and digital circuits, TD circuits bring several compelling features: high-resolution, high-throughput, and low-design complexity with digital integration capability. Further, the fabrication technology is advancing into the nanometer regime; the reduction in voltage headroom limits the performance of traditional analog/mixed-signal designs. All-digital design of time-difference circuit needs to be stressed to adapt to the low-cost, low-power, and high-portability applications. We focus on Time-to-Digital Converters (TDC), one of the crucial building blocks in TD circuits. A novel algorithmic architecture is proposed based on a binary search algorithm and validated with both simulation and fabricated silicon. An all-digital structure Time-difference Amplifier (TDA) is designed and implemented to make FPGA and other all-digital implementations for TDC and related TD circuits feasible. Besides, we propose an all-digital timing measurement circuit based on the process variation from CMOS fabrication: PVTMC, which achieves a high measurement resolution: