Digitally-Enhanced Software-Defined Radio Receiver Robust to Out-of-Band Interference

A software-defined radio (SDR) receiver with improved robustness to out-of-band interference (OBI) is presented. Two main challenges are identified for an OBI-robust SDR receiver: out-of-band nonlinearity and harmonic mixing. Voltage gain at RF is avoided, and instead realized at baseband in combination with low-pass filtering to mitigate blockers and improve out-of-band IIP3. Two alternative “iterative” harmonic-rejection (HR) techniques are presented to achieve high HR robust to mismatch: a) an analog two-stage polyphase HR concept, which enhances the HR to more than 60 dB; b) a digital adaptive interference cancelling (AIC) technique, which can suppress one dominating harmonic by at least 80 dB. An accurate multiphase clock generator is presented for a mismatch-robust HR. A proof-of-concept receiver is implemented in 65 nm CMOS. Measurements show 34 dB gain, 4 dB NF, and 3.5 dBm in-band IIP3 while the out-of-band IIP3 is + 16 dBm without fine tuning. The measured RF bandwidth is up to 6 GHz and the 8-phase LO works up to 0.9 GHz (master clock up to 7.2 GHz). At 0.8 GHz LO, the analog two-stage polyphase HR achieves a second to sixth order HR > dB over 40 chips, while the digital AIC technique achieves HR > 80 dB for the dominating harmonic. The total power consumption is 50 mA from a 1.2 V supply

Saw-Less radio receivers in CMOS

Smartphones play an essential role in our daily life. Connected to the internet, we can easily keep in touch with family and friends, even if far away, while ever more apps serve us in numerous ways. To support all of this, higher data rates are needed for ever more wireless users, leading to a very crowded radio frequency spectrum. To achieve high spectrum efficiency while reducing unwanted interference, high-quality band-pass filters are needed. Piezo-electrical Surface Acoustic Wave (SAW) filters are conventionally used for this purpose, but such filters need a dedicated design for each new band, are relatively bulky and also costly compared to integrated circuit chips. Instead, we would like to integrate the filters as part of the entire wireless transceiver with digital smartphone hardware on CMOS chips. The research described in this thesis targets this goal. It has recently been shown that N-path filters based on passive switched-RC circuits can realize high-quality band-select filters on CMOS chips, where the center frequency of the filter is widely tunable by the switching-frequency. As CMOS downscaling following Moore’s law brings us lower clock-switching power, lower switch on-resistance and more compact metal-to-metal capacitors, N-path filters look promising. This thesis targets SAW-less wireless receiver design, exploiting N-path filters. As SAW-filters are extremely linear and selective, it is very challenging to approximate this performance with CMOS N-path filters. The research in this thesis proposes and explores several techniques for extending the linearity and enhancing the selectivity of N-path switched-RC filters and mixers, and explores their application in CMOS receiver chip designs. First the state-of-the-art in N-path filters and mixer-first receivers is reviewed. The requirements on the main receiver path are examined in case SAW-filters are removed or replaced by wideband circulators. The feasibility of a SAW-less Frequency Division Duplex (FDD) radio receiver is explored, targeting extreme linearity and compression Irequirements. A bottom-plate mixing technique with switch sharing is proposed. It improves linearity by keeping both the gate-source and gate-drain voltage swing of the MOSFET-switches rather constant, while halving the switch resistance to reduce voltage swings. A new N-path switch-RC filter stage with floating capacitors and bottom-plate mixer-switches is proposed to achieve very high linearity and a second-order voltage-domain RF-bandpass filter around the LO frequency. Extra out-of-band (OOB) rejection is implemented combined with V-I conversion and zero-IF frequency down-conversion in a second cross-coupled switch-RC N-path stage. It offers a low-ohmic high-linearity current path for out-of-band interferers. A prototype chip fabricated in a 28 nm CMOS technology achieves an in-band IIP3 of +10 dBm , IIP2 of +42 dBm, out-of-band IIP3 of +44 dBm, IIP2 of +90 dBm and blocker 1-dB gain-compression point of +13 dBm for a blocker frequency offset of 80 MHz. At this offset frequency, the measured desensitization is only 0.6 dB for a 0-dBm blocker, and 3.5 dB for a 10-dBm blocker at 0.7 GHz operating frequency (i.e. 6 and 9 dB blocker noise figure). The chip consumes 38-96 mW for operating frequencies of 0.1-2 GHz and occupies an active area of 0.49 mm2. Next, targeting to cover all frequency bands up to 6 GHz and achieving a noise figure lower than 3 dB, a mixer-first receiver with enhanced selectivity and high dynamic range is proposed. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off than the conventional up-converted real pole and reduced distortion. This thesis explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45 nm Partially Depleted Silicon on Insulator (PDSOI) technology achieves high linearity (in-band IIP3 of +3 dBm, IIP2 of +56 dBm, out-of-band IIP3 = +39 dBm, IIP2 = +88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz operating frequency. IIFinally, to demonstrate the performance of the implemented blocker-tolerant receiver chip designs, a test setup with a real mobile phone is built to verify the sensitivity of the receiver chip for different practical blocking scenarios

Flexible Receivers in CMOS for Wireless Communication

Consumers are pushing for higher data rates to support more services that are introduced in mobile applications. As an example, a few years ago video-on-demand was only accessed through landlines, but today wireless devices are frequently used to stream video. To support this, more flexible network solutions have merged in 4G, introducing new technical problems to the mobile terminal. New techniques are thus needed, and this dissertation explores five different ideas for receiver front-ends, that are cost-efficient and flexible both in performance and operating frequency. All ideas have been implemented in chips fabricated in 65 nm CMOS technology and verified by measurements. Paper I explores a voltage-mode receiver front-end where sub-threshold positive feedback transistors are introduced to increase the linearity in combination with a bootstrapped passive mixer. Paper II builds on the idea of 8-phase harmonic rejection, but simplifies it to a 6-phase solution that can reject noise and interferers at the 3rd order harmonic of the local oscillator frequency. This provides a good trade-off between the traditional quadrature mixer and the 8- phase harmonic rejection mixer. Furthermore, a very compact inductor-less low noise amplifier is introduced. Paper III investigates the use of global negative feedback in a receiver front-end, and also introduces an auxiliary path that can cancel noise from the main path. In paper IV, another global feedback based receiver front-end is designed, but with positive feedback instead of negative. By introducing global positive feedback, the resistance of the transistors in a passive mixer-first receiver front-end can be reduced to achieve a lower noise figure, while still maintaining input matching. Finally, paper V introduces a full receiver chain with a single-ended to differential LNA, current-mode downconversion mixers, and a baseband circuity that merges the functionalities of the transimpedance amplifier, channel-select filter, and analog-to-digital converter into one single power-efficient block

Advances in Integrated Circuit Design and Implementation for New Generation of Wireless Transceivers

User’s everyday outgrowing demand for high-data and high performance mobile devices pushes industry and researchers into more sophisticated systems to fulfill those expectations. Besides new modulation techniques and new system designs, significant improvement is required in the transceiver building blocks to handle higher data rates with reasonable power efficiency. In this research the challenges and solution to improve the performance of wireless communication transceivers is addressed. The building block that determines the efficiency and battery life of the entire mobile handset is the power amplifier. Modulations with large peak to average power ratio severely degrade efficiency in the conventional fixed-biased power amplifiers (PAs). To address this challenge, a novel PA is proposed with an adaptive load for the PA to improve efficiency. A nonlinearity cancellation technique is also proposed to improve linearity of the PA to satisfy the EVM and ACLR specifications. Ultra wide-band (UWB) systems are attractive due to their ability for high data rate, and low power consumption. In spite of the limitation assigned by the FCC, the coexistence of UWB and NB systems are still an unsolved challenge. One of the systems that is majorly affected by the UWB signal, is the 802.11a system (5 GHz Wi-Fi). A new analog solution is proposed to minimize the interference level caused by the impulse Radio UWB transmitter to nearby narrowband receivers. An efficient 400 Mpulse/s IR-UWB transmitter is implemented that generates an analog UWB pulse with in-band notch that covers the majority of the UWB spectrum. The challenge in receiver (RX) design is the over increasing out of blockers in applications such as cognitive and software defined radios, which are required to tolerate stronger out-of-band (OB) blockers. A novel RX is proposed with a shunt N-path high-Q filter at the LNA input to attenuate OB-blockers. To further improve the linearity, a novel baseband blocker filtering techniques is proposed. A new TIA has been designed to maintain the good linearity performance for blockers at large frequency offsets. As a result, a +22 dBm IIP3 with 3.5 dB NF is achieved. Another challenge in the RX design is the tough NF and linearity requirements for high performance systems such as carrier aggregation. To improve the NF, an extra gain stage is added after the LNA. An N-path high-Q band-pass filter is employed at the LNA output together with baseband blocker filtering technique to attenuate out-of-band blockers and improve the linearity. A noise-cancellation technique based on the frequency translation has been employed to improve the NF. As a result, a 1.8dB NF with +5 dBm IIP3 is achieved. In addition, a new approach has been proposed to reject out of band blockers in carrier aggregation scenarios. The proposed solution also provides carrier to carrier isolation compared to typical solution for carrier aggregation

High Performance RF and Basdband Analog-to-Digital Interface for Multi-standard/Wideband Applications

The prevalence of wireless standards and the introduction of dynamic standards/applications, such as software-defined radio, necessitate the next generation wireless devices that integrate multiple standards in a single chip-set to support a variety of services. To reduce the cost and area of such multi-standard handheld devices, reconfigurability is desirable, and the hardware should be shared/reused as much as possible. This research proposes several novel circuit topologies that can meet various specifications with minimum cost, which are suited for multi-standard applications. This doctoral study has two separate contributions: 1. The low noise amplifier (LNA) for the RF front-end; and 2. The analog-to-digital converter (ADC). The first part of this dissertation focuses on LNA noise reduction and linearization techniques where two novel LNAs are designed, taped out, and measured. The first LNA, implemented in TSMC (Taiwan Semiconductor Manufacturing Company) 0.35Cm CMOS (Complementary metal-oxide-semiconductor) process, strategically combined an inductor connected at the gate of the cascode transistor and the capacitive cross-coupling to reduce the noise and nonlinearity contributions of the cascode transistors. The proposed technique reduces LNA NF by 0.35 dB at 2.2 GHz and increases its IIP3 and voltage gain by 2.35 dBm and 2dB respectively, without a compromise on power consumption. The second LNA, implemented in UMC (United Microelectronics Corporation) 0.13Cm CMOS process, features a practical linearization technique for high-frequency wideband applications using an active nonlinear resistor, which obtains a robust linearity improvement over process and temperature variations. The proposed linearization method is experimentally demonstrated to improve the IIP3 by 3.5 to 9 dB over a 2.5–10 GHz frequency range. A comparison of measurement results with the prior published state-of-art Ultra-Wideband (UWB) LNAs shows that the proposed linearized UWB LNA achieves excellent linearity with much less power than previously published works. The second part of this dissertation developed a reconfigurable ADC for multistandard receiver and video processors. Typical ADCs are power optimized for only one operating speed, while a reconfigurable ADC can scale its power at different speeds, enabling minimal power consumption over a broad range of sampling rates. A novel ADC architecture is proposed for programming the sampling rate with constant biasing current and single clock. The ADC was designed and fabricated using UMC 90nm CMOS process and featured good power scalability and simplified system design. The programmable speed range covers all the video formats and most of the wireless communication standards, while achieving comparable Figure-of-Merit with customized ADCs at each performance node. Since bias current is kept constant, the reconfigurable ADC is more robust and reliable than the previous published works

High Performance LNAs and Mixers for Direct Conversion Receivers in BiCMOS and CMOS Technologies

The trend in cellular chipset design today is to incorporate support for a larger number of frequency bands for each new chipset generation. If the chipset also supports receiver diversity two low noise amplifiers (LNAs) are required for each frequency band. This is however associated with an increase of off-chip components, i.e. matching components for the LNA inputs, as well as complex routing of the RF input signals. If balanced LNAs are implemented the routing complexity is further increased. The first presented work in this thesis is a novel multiband low noise single ended LNA and mixer architecture. The mixer has a novel feedback loop suppressing both second order distortion as well as DC-offset. The performance, verified by Monte Carlo simulations, is sufficient for a WCDMA application. The second presented work is a single ended multiband LNA with programmable integrated matching. The LNA is connected to an on-chip tunable balun generating differential RF signals for a differential mixer. The combination of the narrow band input matching and narrow band balun of the presented LNA is beneficial for suppressing third harmonic downconversion of a WLAN interferer. The single ended architecture has great advantages regarding PCB routing of the RF input signals but is on the other hand more sensitive to common mode interferers, e.g. ground, supply and substrate noise. An analysis of direct conversion receiver requirements is presented together with an overview of different LNA and mixer architectures in both BiCMOS and CMOS technology

Reconfigurable Receiver Front-Ends for Advanced Telecommunication Technologies

The exponential growth of converging technologies, including augmented reality, autonomous vehicles, machine-to-machine and machine-to-human interactions, biomedical and environmental sensory systems, and artificial intelligence, is driving the need for robust infrastructural systems capable of handling vast data volumes between end users and service providers. This demand has prompted a significant evolution in wireless communication, with 5G and subsequent generations requiring exponentially improved spectral and energy efficiency compared to their predecessors. Achieving this entails intricate strategies such as advanced digital modulations, broader channel bandwidths, complex spectrum sharing, and carrier aggregation scenarios. A particularly challenging aspect arises in the form of non-contiguous aggregation of up to six carrier components across the frequency range 1 (FR1). This necessitates receiver front-ends to effectively reject out-of-band (OOB) interferences while maintaining high-performance in-band (IB) operation. Reconfigurability becomes pivotal in such dynamic environments, where frequency resource allocation, signal strength, and interference levels continuously change. Software-defined radios (SDRs) and cognitive radios (CRs) emerge as solutions, with direct RF-sampling receivers offering a suitable architecture in which the frequency translation is entirely performed in digital domain to avoid analog mixing issues. Moreover, direct RF- sampling receivers facilitate spectrum observation, which is crucial to identify free zones, and detect interferences. Acoustic and distributed filters offer impressive dynamic range and sharp roll off characteristics, but their bulkiness and lack of electronic adjustment capabilities limit their practicality. Active filters, on the other hand, present opportunities for integration in advanced CMOS technology, addressing size constraints and providing versatile programmability. However, concerns about power consumption, noise generation, and linearity in active filters require careful consideration.This thesis primarily focuses on the design and implementation of a low-voltage, low-power RFFE tailored for direct sampling receivers in 5G FR1 applications. The RFFE consists of a balun low-noise amplifier (LNA), a Q-enhanced filter, and a programmable gain amplifier (PGA). The balun-LNA employs noise cancellation, current reuse, and gm boosting for wideband gain and input impedance matching. Leveraging FD-SOI technology allows for programmable gain and linearity via body biasing. The LNA's operational state ranges between high-performance and high-tolerance modes, which are apt for sensitivityand blocking tests, respectively. The Q-enhanced filter adopts noise-cancelling, current-reuse, and programmable Gm-cells to realize a fourth-order response using two resonators. The fourth-order filter response is achieved by subtracting the individual response of these resonators. Compared to cascaded and magnetically coupled fourth-order filters, this technique maintains the large dynamic range of second-order resonators. Fabricated in 22-nm FD-SOI technology, the RFFE achieves 1%-40% fractional bandwidth (FBW) adjustability from 1.7 GHz to 6.4 GHz, 4.6 dB noise figure (NF) and an OOB third-order intermodulation intercept point (IIP3) of 22 dBm. Furthermore, concerning the implementation uncertainties and potential variations of temperature and supply voltage, design margins have been considered and a hybrid calibration scheme is introduced. A combination of on-chip and off-chip calibration based on noise response is employed to effectively adjust the quality factors, Gm-cells, and resonance frequencies, ensuring desired bandpass response. To optimize and accelerate the calibration process, a reinforcement learning (RL) agent is used.Anticipating future trends, the concept of the Q-enhanced filter extends to a multiple-mode filter for 6G upper mid-band applications. Covering the frequency range from 8 to 20 GHz, this RFFE can be configured as a fourth-order dual-band filter, two bandpass filters (BPFs) with an OOB notch, or a BPF with an IB notch. In cognitive radios, the filter’s transmission zeros can be positioned with respect to the carrier frequencies of interfering signals to yield over 50 dB blocker rejection

Configurable circuits and their impact on multi-standard RF front-end architectures

This thesis studies configurable circuits and their impact on multi-standard RF front-end architectures. In particular, low-voltage low-power linear LNA and mixer topologies suitable for implementation in multi-standard front-ends are subject of the investigation. With respect to frequency and bandwidth, multi-standard front-ends can be implemented using either tunable or wideband LNA and mixer topologies. Based on the type of the LNA and mixer(s), multi-standard receiver RF front-ends can be divided into three groups. They can be (tunable) narrow-band, wide-band or combined. The advantages and disadvantages of the different multi-standard receiver RF front-ends have been discussed in detail. The partitioning between off-chip selectivity, on-chip selectivity provided by the LNA and mixer, linearity, power consumption and occupied chip area in each multi-standard RF front-end group are thoroughly investigated. A Figure of Merit (FOM) for the multi-standard receiver RF front-end has been introduced. Based on this FOM the most suitable multi-standard RF front-end group in terms of cost-effectiveness can be selected. In order to determine which multi-standard RF front-end group is the most cost-effective for a practical application, a GSM850/E-GSM/DCS/PCS/Bluetooth/WLANa/b/g multi-standard receiver RF front-end is chosen as a demonstrator. These standards are the most frequently used standards in wireless communication, and this combination of standards allows to users almost "anytime-anywhere" voice and data transfer. In order to verify these results, three demonstrators have been defined, designed and implemented, two wideband RF front-end circuits in 90nm CMOS and 65nm CMOS, and one combined multi-standard RF front-end circuit in 65nm CMOS. The proposed multi-standard demonstrators have been compared with the state-of the art narrow-band, wide-band and combined multi-standard RF front-ends. On the proposed multi-standard RF front-ends and the state-of the art multi-standard RF front-ends the proposed FOM have been applied. The comparison shows that the combined multi-standard RF front-end group is the most cost effective multi-standard group for this application

Continuous-time low-pass filters for integrated wideband radio receivers

This thesis concentrates on the design and implementation of analog baseband continuous-time low-pass filters for integrated wideband radio receivers. A total of five experimental analog baseband low-pass filter circuits were designed and implemented as a part of five single-chip radio receivers in this work. After the motivation for the research work presented in this thesis has been introduced, an overview of analog baseband filters in radio receivers is given first. In addition, a review of the three receiver architectures and the three wireless applications that are adopted in the experimental work of this thesis is presented. The relationship between the integrator non-idealities and integrator Q-factor, as well as the effect of the integrator Q-factor on the filter frequency response, are thoroughly studied on the basis of a literature review. The theoretical study that is provided is essential for the gm-C filter synthesis with non-ideal lossy integrators that is presented after the introduction of different techniques to realize integrator-based continuous-time low-pass filters. The filter design approach proposed for gm-C filters is original work and one of the main points in this thesis, in addition to the experimental IC implementations. Two evolution versions of fourth-order 10-MHz opamp-RC low-pass filters designed and implemented for two multicarrier WCDMA base-station receivers in a 0.25-µm SiGe BiCMOS technology are presented, along with the experimental results of both the low-pass filters and the corresponding radio receivers. The circuit techniques that were used in the three gm-C filter implementations of this work are described and a common-mode induced even-order distortion in a pseudo-differential filter is analyzed. Two evolution versions of fifth-order 240-MHz gm-C low-pass filters that were designed and implemented for two single-chip WiMedia UWB direct-conversion receivers in a standard 0.13-µm and 65-nm CMOS technology, respectively, are presented, along with the experimental results of both the low-pass filters and the second receiver version. The second UWB filter design was also embedded with an ADC into the baseband of a 60-GHz 65-nm CMOS radio receiver. In addition, a third-order 1-GHz gm-C low-pass filter was designed, rather as a test structure, for the same receiver. The experimental results of the receiver and the third gm-C filter implementation are presented