90,461 research outputs found
Radiation tests of the Silicon Drift Detectors for LOFT
During the three years long assessment phase of the LOFT mission, candidate
to the M3 launch opportunity of the ESA Cosmic Vision programme, we estimated
and measured the radiation damage of the silicon drift detectors (SDDs) of the
satellite instrumentation. In particular, we irradiated the detectors with
protons (of 0.8 and 11 MeV energy) to study the increment of leakage current
and the variation of the charge collection efficiency produced by the
displacement damage, and we "bombarded" the detectors with hypervelocity dust
grains to measure the effect of the debris impacts. In this paper we describe
the measurements and discuss the results in the context of the LOFT mission.Comment: Proc. SPIE 9144, Space Telescopes and Instrumentation 2014:
Ultraviolet to Gamma Ray, 91446
Analog Circuits in Ultra-Deep-Submicron CMOS
Modern and future ultra-deep-submicron (UDSM) technologies introduce several new problems in analog design. Nonlinear output conductance in combination with reduced voltage gain pose limits in linearity of (feedback) circuits. Gate-leakage mismatch exceeds conventional matching tolerances. Increasing area does not improve matching any more, except if higher power consumption is accepted or if active cancellation techniques are used. Another issue is the drop in supply voltages. Operating critical parts at higher supply voltages by exploiting combinations of thin- and thick-oxide transistors can solve this problem. Composite transistors are presented to solve this problem in a practical way. Practical rules of thumb based on measurements are derived for the above phenomena
Modeling the Temperature Bias of Power Consumption for Nanometer-Scale CPUs in Application Processors
We introduce and experimentally validate a new macro-level model of the CPU
temperature/power relationship within nanometer-scale application processors or
system-on-chips. By adopting a holistic view, this model is able to take into
account many of the physical effects that occur within such systems. Together
with two algorithms described in the paper, our results can be used, for
instance by engineers designing power or thermal management units, to cancel
the temperature-induced bias on power measurements. This will help them gather
temperature-neutral power data while running multiple instance of their
benchmarks. Also power requirements and system failure rates can be decreased
by controlling the CPU's thermal behavior.
Even though it is usually assumed that the temperature/power relationship is
exponentially related, there is however a lack of publicly available physical
temperature/power measurements to back up this assumption, something our paper
corrects. Via measurements on two pertinent platforms sporting nanometer-scale
application processors, we show that the power/temperature relationship is
indeed very likely exponential over a 20{\deg}C to 85{\deg}C temperature range.
Our data suggest that, for application processors operating between 20{\deg}C
and 50{\deg}C, a quadratic model is still accurate and a linear approximation
is acceptable.Comment: Submitted to SAMOS 2014; International Conference on Embedded
Computer Systems: Architectures, Modeling, and Simulation (SAMOS XIV
Measurement of the effect of Non Ionising Energy Losses on the leakage current of Silicon Drift Detector prototypes for the LOFT satellite
The silicon drift detectors are at the basis of the instrumentation aboard
the Large Observatory For x-ray Timing (LOFT) satellite mission, which
underwent a three year assessment phase within the "Cosmic Vision 2015 - 2025"
long-term science plan of the European Space Agency. Silicon detectors are
especially sensitive to the displacement damage, produced by the non ionising
energy losses of charged and neutral particles, leading to an increase of the
device leakage current and thus worsening the spectral resolution.
During the LOFT assessment phase, we irradiated two silicon drift detectors
with a proton beam at the Proton Irradiation Facility in the accelerator of the
Paul Scherrer Institute and we measured the increase in leakage current. In
this paper we report the results of the irradiation and we discuss the impact
of the radiation damage on the LOFT scientific performance.Comment: 21 pages, 7 figures, 2 tables. Accepted for publication by Journal of
Instrumentation (JINST
Measuring Information Leakage in Website Fingerprinting Attacks and Defenses
Tor provides low-latency anonymous and uncensored network access against a
local or network adversary. Due to the design choice to minimize traffic
overhead (and increase the pool of potential users) Tor allows some information
about the client's connections to leak. Attacks using (features extracted from)
this information to infer the website a user visits are called Website
Fingerprinting (WF) attacks. We develop a methodology and tools to measure the
amount of leaked information about a website. We apply this tool to a
comprehensive set of features extracted from a large set of websites and WF
defense mechanisms, allowing us to make more fine-grained observations about WF
attacks and defenses.Comment: In Proceedings of the 2018 ACM SIGSAC Conference on Computer and
Communications Security (CCS '18
The effect of the displacement damage on the Charge Collection Efficiency in Silicon Drift Detectors for the LOFT satellite
The technology of Silicon Drift Detectors (SDDs) has been selected for the
two instruments aboard the Large Observatory For X-ray Timing (LOFT) space
mission. LOFT underwent a three year long assessment phase as candidate for the
M3 launch opportunity within the "Cosmic Vision 2015 -- 2025" long-term science
plan of the European Space Agency. During the LOFT assessment phase, we studied
the displacement damage produced in the SDDs by the protons trapped in the
Earth's magnetosphere. In a previous paper we discussed the effects of the Non
Ionising Energy Losses from protons on the SDD leakage current. In this paper
we report the measurement of the variation of Charge Collection Efficiency
produced by displacement damage caused by protons and the comparison with the
expected damage in orbit.Comment: 17 pages, 7 figures. Accepted for publication by Journal of
Instrumentatio
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