3 research outputs found
A CMOS hall sensor modelling with readout circuitry and microcontroller processing for magnetic detection
A Hall sensor array system for magnetic field detection and analysis is realized in X-FAB 0.18 μm CMOS technology. Magnetic field detection is attributed to the magnetization of metal coils to metal particles and the sensing characteristics of the Hall sensor array. The system puts forward a complete solution from Hall sensors, analog front-end circuit, analog-to-digital converter (ADC) to microcontroller unit. Using Ansoft Maxwell and COMSOL Multiphysics software for simulation verification, the minimum diameter of magnetic particles that can be detected in the system is 2 μm. The measured signal to noise and distortion ratio, spurious free dynamic range, and effective number of bits of the proposed ADC are 70.61 dB, 90.08 dB, and 11.44-bit, respectively. The microsystem based on STM32 combines hardware and software design, which can effectively adjust the motion parameters and realize the real-time display in the LCD screen of the magnetic field and voltage information. Compared to the prior system, the portability, cost, and efficiency have been considerably improved, which is aimed at the rapid measurement of heavy metal particles such as Fe, Co, and Ni in ambient air and blood
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Low power VCO-based analog-to-digital conversion
textThis dissertation presents novel two stage ADC architecture with a VCO based second stage. With the scaling of the supply voltages in modern CMOS process it is difficult to design high gain operational amplifiers needed for traditional voltage domain two-stage analog to digital converters. However time resolution continues to improve with the advancement in CMOS technology making VCO-based ADC more attractive. The nonlinearity in voltage-to-frequency transfer function is the biggest challenge in design of VCO based ADC. The hybrid approach used in this work uses a voltage domain first stage to determine the most significant bits and uses a VCO based second stage to quantize the small residue obtained from first stage. The architecture relaxes the gain requirement on the the first stage opamp and also relaxes the linearity requirements on the second stage VCO. The prototype ADC built in 65nm CMOS process achieves 63.7dB SNDR in 10MHz bandwidth while only consuming 1.1mW of power. The performance of the prototype chip is comparable to the state-of-art in terms of figure-of-merit but this new architecture uses significantly less circuit area.Electrical and Computer Engineerin
Digital Intensive Mixed Signal Circuits with In-situ Performance Monitors
University of Minnesota Ph.D. dissertation.November 2016. Major: Electrical/Computer Engineering. Advisor: Chris Kim. 1 computer file (PDF); x, 137 pages.Digital intensive circuit design techniques of different mixed-signal systems such as data converters, clock generators, voltage regulators etc. are gaining attention for the implementation of modern microprocessors and system-on-chips (SoCs) in order to fully utilize the benefits of CMOS technology scaling. Moreover different performance improvement schemes, for example, noise reduction, spur cancellation, linearity improvement etc. can be easily performed in digital domain. In addition to that, increasing speed and complexity of modern SoCs necessitate the requirement of in-situ measurement schemes, primarily for high volume testing. In-situ measurements not only obviate the need for expensive measurement equipments and probing techniques, but also reduce the test time significantly when a large number of chips are required to be tested. Several digital intensive circuit design techniques are proposed in this dissertation along with different in-situ performance monitors for a variety of mixed signal systems. First, a novel beat frequency quantization technique is proposed in a two-step VCO quantizer based ADC implementation for direct digital conversion of low amplitude bio- potential signals. By direct conversion, it alleviates the requirement of the area and power consuming analog-frontend (AFE) used in a conventional ADC designs. This prototype design is realized in a 65nm CMOS technology. Measured SNDR is 44.5dB from a 10mVpp, 300Hz signal and power consumption is only 38μW. Next, three different clock generation circuits, a phase-locked loop (PLL), a multiplying delay-locked loop (MDLL) and a frequency-locked loop (FLL) are presented. First a 0.4-to-1.6GHz sub-sampling fractional-N all digital PLL architecture is discussed that utilizes a D-flip-flop as a digital sub-sampler. Measurement results from a 65nm CMOS test-chip shows 5dB lower phase noise at 100KHz offset frequency, compared to a conventional architecture. The Digital PLL (DPLL) architecture is further extended for a digital MDLL implementation in order to suppress the VCO phase noise beyond the DPLL bandwidth. A zero-offset aperture phase detector (APD) and a digital- to-time converter (DTC) are employed for static phase-offset (SPO) cancellation. A unique in-situ detection circuitry achieves a high resolution SPO measurement in time domain. A 65nm test-chip shows 0.2-to-1.45GHz output frequency range while reducing the phase-noise by 9dB compared to a DPLL. Next, a frequency-to-current converter (FTC) based fractional FLL is proposed for a low accuracy clock generation in an extremely low area for IoT application. High density deep-trench capacitors are used for area reduction. The test-chip is fabricated in a 32nm SOI technology that takes only 0.0054mm2 active area. A high-resolution in-situ period jitter measurement block is also incorporated in this design. Finally, a time based digital low dropout (DLDO) regulator architecture is proposed for fine grain power delivery over a wide load current dynamic range and input/output voltage in order to facilitate dynamic voltage and frequency scaling (DVFS). High- resolution beat frequency detector dynamically adjusts the loop sampling frequency for ripple and settling time reduction due to load transients. A fixed steady-state voltage offset provides inherent active voltage positioning (AVP) for ripple reduction. Circuit simulations in a 65nm technology show more than 90% current efficiency for 100X load current variation, while it can operate for an input voltage range of 0.6V – 1.2V