DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability

To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM) and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC) design have been explored. The existing modeling tools, however, cover only a few memory technologies, technology nodes and fabrication approaches. We present DESTINY, a tool for modeling 2D/3D memories designed using SRAM, resistive RAM (ReRAM), spin transfer torque RAM (STT-RAM), phase change RAM (PCM) and embedded DRAM (eDRAM) and 2D memories designed using spin orbit torque RAM (SOT-RAM), domain wall memory (DWM) and Flash memory. In addition to single-level cell (SLC) designs for all of these memories, DESTINY also supports modeling MLC designs for NVMs. We have extensively validated DESTINY against commercial and research prototypes of these memories. DESTINY is very useful for performing design-space exploration across several dimensions, such as optimizing for a target (e.g., latency, area or energy-delay product) for a given memory technology, choosing the suitable memory technology or fabrication method (i.e., 2D v/s 3D) for a given optimization target, etc. We believe that DESTINY will boost studies of next-generation memory architectures used in systems ranging from mobile devices to extreme-scale supercomputers. The latest source-code of DESTINY is available from the following git repository: https://bitbucket.org/sparsh_mittal/destiny_v2

A survey of emerging architectural techniques for improving cache energy consumption

The search goes on for another ground breaking phenomenon to reduce the ever-increasing disparity between the CPU performance and storage. There are encouraging breakthroughs in enhancing CPU performance through fabrication technologies and changes in chip designs but not as much luck has been struck with regards to the computer storage resulting in material negative system performance. A lot of research effort has been put on finding techniques that can improve the energy efficiency of cache architectures. This work is a survey of energy saving techniques which are grouped on whether they save the dynamic energy, leakage energy or both. Needless to mention, the aim of this work is to compile a quick reference guide of energy saving techniques from 2013 to 2016 for engineers, researchers and students

Improving Phase Change Memory Performance with Data Content Aware Access

A prominent characteristic of write operation in Phase-Change Memory (PCM) is that its latency and energy are sensitive to the data to be written as well as the content that is overwritten. We observe that overwriting unknown memory content can incur significantly higher latency and energy compared to overwriting known all-zeros or all-ones content. This is because all-zeros or all-ones content is overwritten by programming the PCM cells only in one direction, i.e., using either SET or RESET operations, not both. In this paper, we propose data content aware PCM writes (DATACON), a new mechanism that reduces the latency and energy of PCM writes by redirecting these requests to overwrite memory locations containing all-zeros or all-ones. DATACON operates in three steps. First, it estimates how much a PCM write access would benefit from overwriting known content (e.g., all-zeros, or all-ones) by comprehensively considering the number of set bits in the data to be written, and the energy-latency trade-offs for SET and RESET operations in PCM. Second, it translates the write address to a physical address within memory that contains the best type of content to overwrite, and records this translation in a table for future accesses. We exploit data access locality in workloads to minimize the address translation overhead. Third, it re-initializes unused memory locations with known all-zeros or all-ones content in a manner that does not interfere with regular read and write accesses. DATACON overwrites unknown content only when it is absolutely necessary to do so. We evaluate DATACON with workloads from state-of-the-art machine learning applications, SPEC CPU2017, and NAS Parallel Benchmarks. Results demonstrate that DATACON significantly improves system performance and memory system energy consumption compared to the best of performance-oriented state-of-the-art techniques.Comment: 18 pages, 21 figures, accepted at ACM SIGPLAN International Symposium on Memory Management (ISMM

Design Guidelines for High-Performance SCM Hierarchies

With emerging storage-class memory (SCM) nearing commercialization, there is evidence that it will deliver the much-anticipated high density and access latencies within only a few factors of DRAM. Nevertheless, the latency-sensitive nature of memory-resident services makes seamless integration of SCM in servers questionable. In this paper, we ask the question of how best to introduce SCM for such servers to improve overall performance/cost over existing DRAM-only architectures. We first show that even with the most optimistic latency projections for SCM, the higher memory access latency results in prohibitive performance degradation. However, we find that deployment of a modestly sized high-bandwidth 3D stacked DRAM cache makes the performance of an SCM-mostly memory system competitive. The high degree of spatial locality that memory-resident services exhibit not only simplifies the DRAM cache's design as page-based, but also enables the amortization of increased SCM access latencies and the mitigation of SCM's read/write latency disparity. We identify the set of memory hierarchy design parameters that plays a key role in the performance and cost of a memory system combining an SCM technology and a 3D stacked DRAM cache. We then introduce a methodology to drive provisioning for each of these design parameters under a target performance/cost goal. Finally, we use our methodology to derive concrete results for specific SCM technologies. With PCM as a case study, we show that a two bits/cell technology hits the performance/cost sweet spot, reducing the memory subsystem cost by 40% while keeping performance within 3% of the best performing DRAM-only system, whereas single-level and triple-level cell organizations are impractical for use as memory replacements.Comment: Published at MEMSYS'1