Modeling of magnetic sensitivity of the metal-oxide-semiconductor field-effect transistor with double gates

In this paper, we investigated the effect of magnetic field on the carrier transport phenomenon in metal-oxide-semiconductor field-effect transistor (MOSFET) with double gates by examining the behavior of the semiconductor under the Lorentz force and a constant magnetic field. Various behaviors within the channel have been simulated including the potential distribution, conduction and valence bands, total current density, total charge density and the magnetic field. The results obtained indicate that this modulation affects the electrical characteristics of the device such as on-state current (ION), subthreshold leakage current (IOF), threshold voltage (VTh), and the Hall voltage (VH) is induced by the magnetic field. The change in threshold voltage caused by the magnetic field has been observed to affect the switching characteristics of the device, such as speed and power loss, as well as the threshold voltage VTh and (ION/IOF) ratio. Note that it is reduced by 10-3 V. 102 for magnetic fields of ±6 and ±5.5 tesla respectively

A Simple Drain Current Model for MOS Transistors with the Lorentz Force Effect

A novel concept of drain current modelling in rectangular normal MOS transistors with the Lorentz force has been proposed for the first time. The single-drain MOS transistor is qualified as a magnetic sensor. To create the Lorentz force, a DC loop current is applied through an on-chip metal loop around the device, and the relation between the applied loop current and the created magnetic field is assumed to be linear in nature. The drain current of the MOS transistor is reduced with the applied Lorentz force from both directions. This change in the drain current is ascribed to a change in mobility in the strong inversion region, and a change in mobility of around 4.45% is observed. To model this change, a set of novel drain current equations, under the Lorentz force, for the strong inversion region has been proposed. A satisfactory agreement of an average error of less than 2% between the measured and the calculated drain currents under the magnetic field created by an on-chip metal loop is achieved