A Process Variation Tolerant Self-Compensation Sense Amplifier Design

As we move under the aegis of the Moore\u27s law, we have to deal with its darker side with problems like leakage and short channel effects. Once we go beyond 45nm regime process variations also have emerged as a significant design concern.Embedded memories uses sense amplifier for fast sensing and typically, sense amplifiers uses pair of matched transistors in a positive feedback environment. A small difference in voltage level of applied input signals to these matched transistors is amplified and the resulting logic signals are latched. Intra die variation causes mismatch between the sense transistors that should ideally be identical structures. Yield loss due to device and process variations has never been so critical to cause failure in circuits. Due to growth in size of embedded SRAMs as well as usage of sense amplifier based signaling techniques, process variations in sense amplifiers leads to significant loss of yield for that we need to come up with process variation tolerant circuit styles and new devices. In this work impact of transistor mismatch due to process variations on sense amplifier is evaluated and this problem is stated. For the solution of the problem a novel self compensation scheme on sense amplifiers is presented on different technology nodes up to 32nm on conventional bulk MOSFET technology. Our results show that the self compensation technique in the conventional bulk MOSFET latch type sense amplifier not just gives improvement in the yield but also leads to improvement in performance for latch type sense amplifiers. Lithography related CD variations, fluctuations in dopant density, oxide thickness and parametric variations of devices are identified as a major challenge to the classical bulk type MOSFET. With the emerging nanoscale devices, SIA roadmap identifies FinFETs as a candidate for post-planar end-of-roadmap CMOS device. With current technology scaling issues and with conventional bulk type MOSFET on 32nm node our technique can easily be applied to Double Gate devices. In this work, we also develop the model of Double Gate MOSFET through 3D Device Simulator Damocles and TCAD simulator. We propose a FinFET based process variation tolerant sense amplifier design that exploits the back gate of FinFET devices for dynamic compensation against process variations. Results from statistical simulation show that the proposed dynamic compensation is highly effective in restoring yield at a level comparable to that of sense amplifiers without process variations. We created the 32nm double gate models generated from Damocles 3-D device simulations [25] and Taurus Device Simulator available commercially from Synopsys [47] and use them in the nominal latch type sense amplifier design and on the Independent Gate Self Compensation Sense Amplifier Design (IGSSA) to compare the yield and performance benefits of sense amplifier design on FinFET technology over the conventional bulk type CMOS based sense amplifier on 32nm technology node effective in restoring yield at a level comparable to that of sense amplifiers without process variations. We created the 32nm double gate models generated from Damocles 3-D device simulations [25] and Taurus Device Simulator available commercially from Synopsys [47] and use them in the nominal latch type sense amplifier design and on the Independent Gate Self Compensation Sense Amplifier Design (IGSSA) to compare the yield and performance benefits of sense amplifier design on FinFET technology over the conventional bulk type CMOS based sense amplifier on 32nm technology node

SRAM Read-Assist Scheme for Low Power High Performance Applications

Semiconductor technology scaling resulted in a considerable reduction in the transistor cost and an astonishing enhancement in the performance of VLSI (very large scale integration) systems. These nanoscale technologies have facilitated integration of large SRAMs which are now very popular for both processors and system-on-chip (SOC) designs. The density of SRAM array had a quadratic increase with each generation of CMOS technology. However, these nanoscale technologies unveiled few significant challenges to the design of high performance and low power embedded memories. First, process variation has become more significant in these technologies which threaten reliability of sensing circuitry. In order to alleviate this problem, we need to have larger signal swings on the bitlines (BLs) which degrade speed as well as power dissipation. The second challenge is due to the variation in the cell current which will reduce the worst case cell current. Since this cell current is responsible for discharging BLs, this problem will translate to longer activation time for the wordlines (WLs). The longer the WL pulse width is, the more likely is the cell to be unstable. A long WL pulse width can also degrade noise margin. Furthermore, as a result of continuous increase in the size of SRAMs, the BL capacitance has increased significantly which will deteriorate speed as well as power dissipation. The aforementioned problems require additional techniques and treatment such as read-assist techniques to insure fast, low power and reliable read operation in nanoscaled SRAMs. In this research we address these concerns and propose a read-assist sense amplifier (SA) in 65nm CMOS technology that expedites the process of developing differential voltage to be sensed by sense amplifier while reducing voltage swing on the BLs which will result in increased sensing speed, lower power and shorter WL activation time. A complete comparison is made between the proposed scheme, conventional SA and a state of the art design which shows speed improvement and power reduction of 56.1% and 25.9%, respectively over the conventional scheme at the expense of negligible area overhead. Also, the proposed scheme enables us to reduce cell VDD for having the same sensing speed which results in considerable reduction in leakage power dissipation