DDFV Schemes for semiconductors energy-transport models

International audienceWe propose a Discrete Duality Finite Volume scheme (DDFV for short) for an energy transport model for semiconductors. As in the continuous case, thanks to a change of variables into the so-called "entropic variables", we are able to prove a discrete entropy-dissipation estimate, which gives a priori estimates for the problem. We perform some numerical tests for the 2D ballistic diode, by comparing the Chen model and the Lyumkis model

DDFV Schemes for semiconductors energy-transport models

International audienceWe propose a Discrete Duality Finite Volume scheme (DDFV for short) for an energy transport model for semiconductors. As in the continuous case, thanks to a change of variables into the so-called "entropic variables", we are able to prove a discrete entropy-dissipation estimate, which gives a priori estimates for the problem. We perform some numerical tests for the 2D ballistic diode, by comparing the Chen model and the Lyumkis model

Numerical schemes for semiconductors energy- transport models

International audienceWe introduce some finite volume schemes for unipolar energy-transportmodels. Using a reformulation in dual entropy variables, we can show the decay ofa discrete entropy with control of the discrete entropy dissipation

A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors

Energy-transport models describe the flow of electrons through a semiconductor device, influenced by diffusive, electrical, and thermal effects. They consist of the continuity equations for the mass and energy, coupled with Poisson's equation for the electrostatic potential. The energy-transport model can be written in a drift-diffusion formulation which is used for the numerical approximation. The stationary equations are discretized with an exponential fitting mixed finite-element method in two space dimensions. Numerical simulations of a ballistic diode are performed and numerical convergence rates are computed. Furthermore, a two-dimensional MESFET device with parabolic band structure is simulated

A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors

Energy-transport models describe the flow of electrons through a semiconductor device, influenced by diffusive, electrical, and thermal effects. They consist of the continuity equations for the mass and energy, coupled with Poisson\u27s equation for the electrostatic potential. The energy-transport model can be written in a drift-diffusion formulation which is used for the numerical approximation. The stationary equations are discretized with an exponential fitting mixed finite-element method in two space dimensions. Numerical simulations of a ballistic diode are performed and numerical convergence rates are computed. Furthermore, a two-dimensional MESFET device with parabolic band structure is simulated