Design of Ultra Low Power Integrated PLL using Ring VCO

The design of an ultra low power Phase Locked Loop (PLL) is presented in this paper. The proposed PLL consists of a phase detector, a charge pump, low pass filter, and a ring oscillator based voltage controlled oscillator (VCO). The performance of Voltage Controlled Oscillator is of great importance for PLL. The circuit is designed using 0.13µm CMOS technology with the supply voltage of 1V and has a power consumption of 254µW. Keywords: Charge Pump, CMOS Technology, Low Pass Filter, Phase Detector, Phase Locked Loop, Voltage Controlled Oscillator

Phase Noise in CMOS Phase-Locked Loop Circuits

Phase-locked loops (PLLs) have been widely used in mixed-signal integrated circuits. With the continuously increasing demand of market for high speed, low noise devices, PLLs are playing a more important role in communications. In this dissertation, phase noise and jitter performances are investigated in different types of PLL designs. Hot carrier and negative bias temperature instability effects are analyzed from simulations and experiments. Phase noise of a CMOS phase-locked loop as a frequency synthesizer circuit is modeled from the superposition of noises from its building blocks: voltage-controlled oscillator, frequency divider, phase-frequency detector, loop filter and auxiliary input reference clock. A linear time invariant model with additive noise sources in frequency domain is presented to analyze the phase noise. The modeled phase noise results are compared with the corresponding experimentally measured results on phase-locked loop chips fabricated in 0.5 m n-well CMOS process. With the scaling of CMOS technology and the increase of electrical field, MOS transistors have become very sensitive to hot carrier effect (HCE) and negative bias temperature instability (NBTI). These two reliability issues pose challenges to designers for designing of chips in deep submicron CMOS technologies. A new strategy of switchable CMOS phase-locked loop frequency synthesizer is proposed to increase its tuning range. The switchable PLL which integrates two phase-locked loops with different tuning frequencies are designed and fabricated in 0.5 µm CMOS process to analyze the effects under HCE and NBTI. A 3V 1.2 GHz programmable phase-locked loop frequency synthesizer is designed in 0.5 μm CMOS technology. The frequency synthesizer is implemented using LC voltage-controlled oscillator (VCO) and a low power dual-modulus prescaler. The LC VCO working range is from 900MHz to 1.4GHz. Current mode logic (CML) is used in designing high speed D flip-flop in the dual-modulus prescaler circuits for low power consumption. The power consumption of the PLL chip is under 30mW. Fully differential LC VCO is used to provide high oscillation frequency. A new design of LC VCO using carbon nanotube (CNT) wire inductor has been proposed. The PLL design using CNT-LC VCO shows significant improvement in phase noise due to high-Q LC circuit

Phase Noise Analyses and Measurements in the Hybrid Memristor-CMOS Phase-Locked Loop Design and Devices Beyond Bulk CMOS

Phase-locked loop (PLLs) has been widely used in analog or mixed-signal integrated circuits. Since there is an increasing market for low noise and high speed devices, PLLs are being employed in communications. In this dissertation, we investigated phase noise, tuning range, jitter, and power performances in different architectures of PLL designs. More energy efficient devices such as memristor, graphene, transition metal di-chalcogenide (TMDC) materials and their respective transistors are introduced in the design phase-locked loop. Subsequently, we modeled phase noise of a CMOS phase-locked loop from the superposition of noises from its building blocks which comprises of a voltage-controlled oscillator, loop filter, frequency divider, phase-frequency detector, and the auxiliary input reference clock. Similarly, a linear time-invariant model that has additive noise sources in frequency domain is used to analyze the phase noise. The modeled phase noise results are further compared with the corresponding phase-locked loop designs in different n-well CMOS processes. With the scaling of CMOS technology and the increase of the electrical field, the problem of short channel effects (SCE) has become dominant, which causes decay in subthreshold slope (SS) and positive and negative shifts in the threshold voltages of nMOS and pMOS transistors, respectively. Various devices are proposed to continue extending Moore\u27s law and the roadmap in semiconductor industry. We employed tunnel field effect transistor owing to its better performance in terms of SS, leakage current, power consumption etc. Applying an appropriate bias voltage to the gate-source region of TFET causes the valence band to align with the conduction band and injecting the charge carriers. Similarly, under reverse bias, the two bands are misaligned and there is no injection of carriers. We implemented graphene TFET and MoS2 in PLL design and the results show improvements in phase noise, jitter, tuning range, and frequency of operation. In addition, the power consumption is greatly reduced due to the low supply voltage of tunnel field effect transistor

A Low Noise Sub-Sampling PLL in Which Divider Noise Is Eliminated and PD-CP Noise Is not multiplied by N^2

This paper presents a 2.2-GHz low jitter sub-sampling based PLL. It uses a phase-detector/charge-pump (PD/CP)that sub-samples the VCO output with the reference clock. In contrast to what happens in a classical PLL, the PD/CP noise is not multiplied by N2 in this sub-sampling PLL, resulting in a low noise contribution from the PD/CP. Moreover, no frequency divider is needed in the locked state and hence divider noise and power can be eliminated. An added frequency locked loop guarantees correct frequency locking without degenerating jitter performance when in lock. The PLL is implemented in a standard 0.18- m CMOS process. It consumes 4.2 mA from a 1.8 V supply and occupies an active area of 0.4 X 0.45 m

Low-Jitter Clock Multiplication: a Comparioson between PLLs and DLLs

This paper shows that, for a given power budget, a practical phase-locked loop (PLL)-based clock multiplier generates less jitter than a delay-locked loop (DLL) equivalent. This is due to the fact that the delay cells in a PLL ring-oscillator can consume more power per cell than their counterparts in the DLL. We can show that this effect is stronger than the notorious jitter accumulation effect that occurs in the voltage-controlled oscillator (VCO) of a PLL. First, an analysis of the stochastic-output jitter of the architectures, due to the most important noise sources, is presented. Then, another important source of jitter in a DLL-based clock multiplier is treated, namely the stochastic mismatch in the delay cells which compose the DLL voltage-controlled delay line (VCDL). An analysis is presented that relates the stochastic spread of the delay of the cells to the output jitter of the clock multiplier. A circuit design technique, called impedance level scaling, is then presented which allows the designer to optimize the noise and mismatch behavior of a circuit, independently from other specifications such as speed and linearity. Applying this technique on a delay cell design yields a direct tradeoff between noise induced jitter and power usage, and between stochastic mismatch induced jitter and power usage

A PLL Exploiting Sub-Sampling of the VCO Output to Reduce In-band Phase Noise

Abstract— In this paper, we present a 2.2-GHz low jitter PLL based on sub-sampling. It uses a phase-detector/charge-pump (PD/CP) that sub-samples the VCO output with the reference clock. In contrast to what happens in a classical PLL, the PD/CP noise is not multiplied by N2 in this sub-sampling PLL. Moreover, no frequency divider is needed in the locked state and hence divider noise and power can be eliminated. A frequency locked loop guarantees correct frequency locking without degenerating jitter performance. The PLL implemented in a standard 0.18-μm CMOS process consumes 4.2 mA from a 1.8 V supply and occupies an active area of 0.4 × 0.45 mm2. The in-band phase noise at 200 kHz offset is measured to be -126 dBc/Hz and the rms PLL output jitter integrated from 10 kHz to 40 MHz is 0.15 ps

Noise shaping Asynchronous SAR ADC based time to digital converter

Time-to-digital converters (TDCs) are key elements for the digitization of timing information in modern mixed-signal circuits such as digital PLLs, DLLs, ADCs, and on-chip jitter-monitoring circuits. Especially, high-resolution TDCs are increasingly employed in on-chip timing tests, such as jitter and clock skew measurements, as advanced fabrication technologies allow fine on-chip time resolutions. Its main purpose is to quantize the time interval of a pulse signal or the time interval between the rising edges of two clock signals. Similarly to ADCs, the performance of TDCs are also primarily characterized by Resolution, Sampling Rate, FOM, SNDR, Dynamic Range and DNL/INL. This work proposes and demonstrates 2nd order noise shaping Asynchronous SAR ADC based TDC architecture with highest resolution of 0.25 ps among current state of art designs with respect to post-layout simulation results. This circuit is a combination of low power/High Resolution 2nd Order Noise Shaped Asynchronous SAR ADC backend with simple Time to Amplitude converter (TAC) front-end and is implemented in 40nm CMOS technology. Additionally, special emphasis is given on the discussion on various current state of art TDC architectures.Electrical and Computer Engineerin