A Hot Channel

This paper studies on-chip communication with non-ideal heat sinks. A channel model is proposed where the variance of the additive noise depends on the weighted sum of the past channel input powers. It is shown that, depending on the weights, the capacity can be either bounded or unbounded in the input power. A necessary condition and a sufficient condition for the capacity to be bounded are presented.Comment: to be presented at 2007 IEEE Information Theory Workshop (ITW), replaced with version that will appear in the proceeding

Impact Ionization and Hot-Electron Injection Derived Consistently from Boltzmann Transport

We develop a quantitative model of the impact-ionizationand hot-electron–injection processes in MOS devices from first principles. We begin by modeling hot-electron transport in the drain-to-channel depletion region using the spatially varying Boltzmann transport equation, and we analytically find a self consistent distribution function in a two step process. From the electron distribution function, we calculate the probabilities of impact ionization and hot-electron injection as functions of channel current, drain voltage, and floating-gate voltage. We compare our analytical model results to measurements in long-channel devices. The model simultaneously fits both the hot-electron- injection and impact-ionization data. These analytical results yield an energydependent impact-ionization collision rate that is consistent with numerically calculated collision rates reported in the literature

Noise thermometry in narrow 2D electron gas heat baths connected to a quasi-1D interferometer

Thermal voltage noise measurements are performed in order to determine the electron temperature in nanopatterned channels of a GaAs/AlGaAs heterostructure at bath temperatures of 4.2 and 1.4 K. Two narrow two-dimensional (2D) heating channels, close to the transition to the one-dimensional (1D) regime, are connected by a quasi-1D quantum interferometer. Under dc current heating of the electrons in one heating channel, we perform cross-correlated noise measurements locally in the directly heated channel and nonlocally in the other channel, which is indirectly heated by hot electron diffusion across the quasi-1D connection. We observe the same functional dependence of the thermal noise on the heating current. The temperature dependence of the electron energy-loss rate is reduced compared to wider 2D systems. In the quantum interferometer, we show the decoherence due to the diffusion of hot electrons from the heating channel into the quasi-1D system, which causes a thermal gradient.Comment: 6 pages, 5 figure

Microbial communities and arsenic biogeochemistry at the outflow of an alkaline sulfide-rich hot spring.

Alkaline sulfide-rich hot springs provide a unique environment for microbial community and arsenic (As) biogeochemistry. In this study, a representative alkaline sulfide-rich hot spring, Zimeiquan in the Tengchong geothermal area, was chosen to study arsenic geochemistry and microbial community using Illumina MiSeq sequencing. Over 0.26 million 16S rRNA sequence reads were obtained from 5-paired parallel water and sediment samples along the hot spring's outflow channel. High ratios of As(V)/AsSum (total combined arsenate and arsenite concentrations) (0.59-0.78), coupled with high sulfide (up to 5.87 mg/L), were present in the hot spring's pools, which suggested As(III) oxidation occurred. Along the outflow channel, AsSum increased from 5.45 to 13.86 μmol/L, and the combined sulfide and sulfate concentrations increased from 292.02 to 364.28 μmol/L. These increases were primarily attributed to thioarsenic transformation. Temperature, sulfide, As and dissolved oxygen significantly shaped the microbial communities between not only the pools and downstream samples, but also water and sediment samples. Results implied that the upstream Thermocrinis was responsible for the transformation of thioarsenic to As(III) and the downstream Thermus contributed to derived As(III) oxidation. This study improves our understanding of microbially-mediated As transformation in alkaline sulfide-rich hot springs

Microembossing of ultrafine grained Al: microstructural analysis and finite element modelling

Ultra fine grained (UFG) Al-1050 processed by equal channel angular pressing (ECAP) and UFG Al-Mg-Cu-Mn processed by high pressure torsion (HPT) were embossed at both room temperature and 300 °C, with the aim of producing micro-channels. The behaviour of Al alloys during the embossing process was analysed using finite element (FE) modelling. The cold embossing of both Al alloys is characterised by a partial pattern transfer, a large embossing force, channels with oblique sidewalls and a large failure rate of the mould. The hot embossing is characterised by straight channel sidewalls, fully transferred patterns and reduced loads which decrease the failure rate of the mould. Hot embossing of UFG Al-Mg-Cu-Mn produced by HPT shows a potential of fabrication of microelectromechanical system (MEMS) components with micro channels

Spontaneous current generation in gated nanostructures

We have observed an unusual dc current spontaneously generated in the conducting channel of a short-gated GaAs transistor. The magnitude and direction of this current critically depend upon the voltage applied to the gate. We propose that it is initiated by the injection of hot electrons from the gate that relax via phonon emission. The phonons then excite secondary electrons from asymmetrically distributed impurities in the channel, which leads to the observed current