High quality testing of grid style power gating

This paper shows that existing delay-based testing techniques for power gating exhibit fault coverage loss due to unconsidered delays introduced by the structure of the virtual voltage power-distribution-network (VPDN). To restore this loss, which could reach up to 70.3% on stuck-open faults, we propose a design-for-testability (DFT) logic that considers the impact of VPDN on fault coverage in order to constitute the proper interface between the VPDN and the DFT. The proposed logic can be easily implemented on-top of existing DFT solutions and its overhead is optimized by an algorithm that offers trade-off flexibility between test-application-time and hardware overhead. Through physical layout SPICE simulations, we show complete fault coverage recovery on stuck-open faults and 43.2% test-application-time improvement compared to a previously proposed DFT technique. To the best of our knowledge, this paper presents the first analysis of the VPDN impact on test qualit

Delay test for diagnosis of power switches

Power switches are used as part of power-gating technique to reduce leakage power of a design. To the best of our knowledge, this is the first work in open-literature to show a systematic diagnosis method for accurately diagnosingpower switches. The proposed diagnosis method utilizes recently proposed DFT solution for efficient testing of power switches in the presence of PVT variation. It divides power switches into segments such that any faulty power switch is detectable thereby achieving high diagnosis accuracy. The proposed diagnosis method has been validated through SPICE simulation using a number of ISCAS benchmarks synthesized with a 90-nm gate library. Simulation results show that when considering the influence of process variation, the worst case loss of accuracy is less than 4.5%; and the worst case loss of accuracy is less than 12% when considering VT (Voltage and Temperature) variations

A Cost-Effective Fault Tolerance Technique for Functional TSV in 3-D ICs

Regular and redundant through-silicon via (TSV) interconnects are used in fault tolerance techniques of 3-D IC. However, the fabrication process of TSVs results in defects that reduce the yield and reliability of TSVs. On the other hand, each TSV is associated with a significant amount of on-chip area overhead. Therefore, unlike the state-of-the-art fault tolerance architectures, here we propose the time division multiplexing access (TDMA)-based fault tolerance technique without using any redundant TSVs, which reduces the area overhead and enhances the yield. In the proposed technique, by means of TDMA, we reroute the signal through defect-free TSV. Subsequently, an architecture based on the proposed technique has been designed, evaluated, and validated on logic-on-logic 3-D IWLS'05 benchmark circuits using 130-nm technology node. The proposed technique is found to reduce the area overhead by 28.70%-40.60%, compared to the state-of-the-art architectures and results in a yield of 98.9%-99.8%

A Fast and Accurate Process Variation-aware Modeling Technique for Resistive Bridge Defects

Recent research has shown that tests generated without taking process variation into account may lead to loss of test quality. At present there is no efficient device-level modeling technique that models the effect of process variation on resistive bridge defects. This paper presents a fast and accurate technique to achieve this, including modeling the effect of voltage and temperature variation using BSIM4 transistor model. To speedup the computation time and without compromising simulation accuracy (achieved through BSIM4) two efficient voltage approximation algorithms are proposed for calculating logic threshold of driven gates and voltages on bridged lines of a fault-site to calculate bridge critical resistance. Experiments are conducted on a 65-nm gate library (for illustration purposes), and results show that on average the proposed modeling technique is more than 53 times faster and in the worst case, error in bridge critical resistance is 2.64% when compared with HSPICE