A fast and energy-efficient two-stage level shifter using the controlled Wilson current mirror

Multiple voltage domains are commonplace in modern SoCs and level shifter (LS) circuits allow different voltage domains to be interfaced with each other. As the reduced supply voltages are extensively used in digital blocks for low-power operation, the conversion of sub-threshold voltage levels to full VDD signal becomes a particular problem. In this paper we present a new LS structure for the fast and energy-efficient conversion of extremely low voltage levels. The proposed LS is a two-stage structure consisting of a controlled Wilson current mirror and eliminates the negative feedback mechanism. Inverted output of the second stage controls the current through the first stage. If the input signal is logical high (VDDL) then the circuit will produce high output (VDDH) and the first stage is prepared to conduct the current for logical 0 input (0V). This improves the slew rate problem and enables fast and energy-efficient operation. Considering process corners at a 90-nm technology node, the proposed design reliably converts 150-mV input signal into 1 V output signal. Post-layout results show that the proposed LS exhibits a propagation delay of 16 ns, a total energy per transition of only 79 fJ, and a static power dissipation of 16.6 nW for a 200 mV input signal at 1-MHz, while loading 100 fF of capacitive load

Development of Energy Models for Design Space Exploration of Embedded Many-Core Systems

This paper introduces a methodology to develop energy models for the design space exploration of embedded many-core systems. The design process of such systems can benefit from sophisticated models. Software and hardware can be specifically optimized based on comprehensive knowledge about application scenario and hardware behavior. The contribution of our work is an automated framework to estimate the energy consumption at an arbitrary abstraction level without the need to provide further information about the system. We validated our framework with the configurable many-core system CoreVA-MPSoC. Compared to a simulation of the CoreVA-MPSoC on gate level in a 28nm FD-SOI standard cell technology, our framework shows an average estimation error of about 4%.Comment: Presented at HIP3ES, 201

A 65 nm 32 b Subthreshold Processor With 9T Multi-Vt SRAM and Adaptive Supply Voltage Control

Lütkemeier S, Jungeblut T, Berge HKO, Aunet S, Porrmann M, Rückert U. A 65 nm 32 b Subthreshold Processor With 9T Multi-Vt SRAM and Adaptive Supply Voltage Control. IEEE Journal Of Solid-State Circuits. 2013;48(1):8-19.An energy-efficient SoC with 32 b subthreshold RISC processor cores, 32 kB conventional cache memory, and 9T ultra-low voltage (ULV) SRAM based on a flexible and extensible architecture was fabricated on a 2.7 mm(2) test chip in 65 nm low power CMOS. The processor cores are based on a custom standard cell library that was designed using a multiobjective approach to optimize noise margins, switching energy, and propagation delay simultaneously. The cores operate over a supply voltage range from 200 mV (best samples) to 1.2 V with clock frequencies from 10 kHz to 94 MHz at room temperature. The lowest energy consumption per cycle of 9.94 pJ is observed at 325 mV and 133 kHz. A 2 kb ULV SRAM macro achieves minimum energy per operation at averages of 321 mV (0.030 sigma/mu), 567 fJ (0.037 sigma/mu), and 730 kHz (0.184 sigma/mu), for equal number of 32 b read/write operations. The off-chip performance and power management subsystem provides dynamic voltage and frequency scaling (DVFS) combined with an adaptive supply voltage generation for dynamic PVT compensation

Subthreshold SRAM Design for Energy Efficient Applications in Nanometric CMOS Technologies

Embedded SRAM circuits are vital components in a modern system on chip (SOC) that can occupy up to 90% of the total area. Therefore, SRAM circuits heavily affect SOC performance, reliability, and yield. In addition, most of the SRAM bitcells are in standby mode and significantly contribute to the total leakage current and leakage power consumption. The aggressive demand in portable devices and billions of connected sensor networks requires long battery life. Therefore, careful design of SRAM circuits with minimal power consumption is in high demand. Reducing the power consumption is mainly achieved by reducing the power supply voltage in the idle mode. However, simply reducing the supply voltage imposes practical limitations on SRAM circuits such as reduced static noise margin, poor write margin, reduced number of cells per bitline, and reduced bitline sensing margin that might cause read/write failures. In addition, the SRAM bitcell has contradictory requirements for read stability and writability. Improving the read stability can cause difficulties in a write operation or vice versa. In this thesis, various techniques for designing subthreshold energy-efficient SRAM circuits are proposed. The proposed techniques include improvement in read margin and write margin, speed improvement, energy consumption reduction, new bitcell architecture and utilizing programmable wordline boosting. A programmable wordline boosting technique is exploited on a conventional 6T SRAM bitcell to improve the operational speed. In addition, wordline boosting can reduce the supply voltage while maintaining the operational frequency. The reduction of the supply voltage allows the memory macro to operate with reduced power consumption. To verify the design, a 16-kb SRAM was fabricated using the TSMC 65 nm CMOS technology. Measurement results show that the maximum operational frequency increases up to 33.3% when wordline boosting is applied. Besides, the supply voltage can be reduced while maintaining the same frequency. This allows reducing the energy consumption to be reduced by 22.2%. The minimum energy consumption achieved is 0.536 fJ/b at 400 mV. Moreover, to improve the read margin, a 6T bitcell SRAM with a PMOS access transistor is proposed. Utilizing a PMOS access transistor results in lower zero level degradation, and hence higher read stability. In addition, the access transistor connected to the internal node holding V DD acts as a stabilizer and counterbalances the effect of zero level degradation. In order to improve the writability, wordline boosting is exploited. Wordline boosting also helps to compensate for the lower speed of the PMOS access transistor compared to a NMOS transistor. To verify our design, a 2kb SRAM is fabricated in the TSMC 65 nm CMOS technology. Measurement results show that the maximum operating frequency of the test chip is at 3.34 MHz at 290 mV. The minimum energy consumption is measured as 1.1 fJ/b at 400 mV

ULTRALOW-POWER, LOW-VOLTAGE DIGITAL CIRCUITS FOR BIOMEDICAL SENSOR NODES

Ph.DDOCTOR OF PHILOSOPH

Clock Generator Circuits for Low-Power Heterogeneous Multiprocessor Systems-on-Chip

In this work concepts and circuits for local clock generation in low-power heterogeneous multiprocessor systems-on-chip (MPSoCs) are researched and developed. The targeted systems feature a globally asynchronous locally synchronous (GALS) clocking architecture and advanced power management functionality, as for example fine-grained ultra-fast dynamic voltage and frequency scaling (DVFS). To enable this functionality compact clock generators with low chip area, low power consumption, wide output frequency range and the capability for ultra-fast frequency changes are required. They are to be instantiated individually per core. For this purpose compact all digital phase-locked loop (ADPLL) frequency synthesizers are developed. The bang-bang ADPLL architecture is analyzed using a numerical system model and optimized for low jitter accumulation. A 65nm CMOS ADPLL is implemented, featuring a novel active current bias circuit which compensates the supply voltage and temperature sensitivity of the digitally controlled oscillator (DCO) for reduced digital tuning effort. Additionally, a 28nm ADPLL with a new ultra-fast lock-in scheme based on single-shot phase synchronization is proposed. The core clock is generated by an open-loop method using phase-switching between multi-phase DCO clocks at a fixed frequency. This allows instantaneous core frequency changes for ultra-fast DVFS without re-locking the closed loop ADPLL. The sensitivity of the open-loop clock generator with respect to phase mismatch is analyzed analytically and a compensation technique by cross-coupled inverter buffers is proposed. The clock generators show small area (0.0097mm2 (65nm), 0.00234mm2 (28nm)), low power consumption (2.7mW (65nm), 0.64mW (28nm)) and they provide core clock frequencies from 83MHz to 666MHz which can be changed instantaneously. The jitter performance is compliant to DDR2/DDR3 memory interface specifications. Additionally, high-speed clocks for novel serial on-chip data transceivers are generated. The ADPLL circuits have been verified successfully by 3 testchip implementations. They enable efficient realization of future low-power MPSoCs with advanced power management functionality in deep-submicron CMOS technologies.In dieser Arbeit werden Konzepte und Schaltungen zur lokalen Takterzeugung in heterogenen Multiprozessorsystemen (MPSoCs) mit geringer Verlustleistung erforscht und entwickelt. Diese Systeme besitzen eine global-asynchrone lokal-synchrone Architektur sowie Funktionalität zum Power Management, wie z.B. das feingranulare, schnelle Skalieren von Spannung und Taktfrequenz (DVFS). Um diese Funktionalität zu realisieren werden kompakte Taktgeneratoren benötigt, welche eine kleine Chipfläche einnehmen, wenig Verlustleitung aufnehmen, einen weiten Bereich an Ausgangsfrequenzen erzeugen und diese sehr schnell ändern können. Sie sollen individuell pro Prozessorkern integriert werden. Dazu werden kompakte volldigitale Phasenregelkreise (ADPLLs) entwickelt, wobei eine bang-bang ADPLL Architektur numerisch modelliert und für kleine Jitterakkumulation optimiert wird. Es wird eine 65nm CMOS ADPLL implementiert, welche eine neuartige Kompensationsschlatung für den digital gesteuerten Oszillator (DCO) zur Verringerung der Sensitivität bezüglich Versorgungsspannung und Temperatur beinhaltet. Zusätzlich wird eine 28nm CMOS ADPLL mit einer neuen Technik zum schnellen Einschwingen unter Nutzung eines Phasensynchronisierers realisiert. Der Prozessortakt wird durch ein neuartiges Phasenmultiplex- und Frequenzteilerverfahren erzeugt, welches es ermöglicht die Taktfrequenz sofort zu ändern um schnelles DVFS zu realisieren. Die Sensitivität dieses Frequenzgenerators bezüglich Phasen-Mismatch wird theoretisch analysiert und durch Verwendung von kreuzgekoppelten Taktverstärkern kompensiert. Die hier entwickelten Taktgeneratoren haben eine kleine Chipfläche (0.0097mm2 (65nm), 0.00234mm2 (28nm)) und Leistungsaufnahme (2.7mW (65nm), 0.64mW (28nm)). Sie stellen Frequenzen von 83MHz bis 666MHz bereit, welche sofort geändert werden können. Die Schaltungen erfüllen die Jitterspezifikationen von DDR2/DDR3 Speicherinterfaces. Zusätzliche können schnelle Takte für neuartige serielle on-Chip Verbindungen erzeugt werden. Die ADPLL Schaltungen wurden erfolgreich in 3 Testchips erprobt. Sie ermöglichen die effiziente Realisierung von zukünftigen MPSoCs mit Power Management in modernsten CMOS Technologien