Digital Phase Locked-Loop With Wide Tuning Range And Dynamic Phase Shift

For decades, Phase Lock Loop (PLL) has been widely used in numerous systems, such as telecommunications and digital design, where it plays significant role in improving overall system timing. Moving forward, with the latest revolution towards System-on-chip technology (SOC), the need of PLL in the form of Integrated Circuits has been growing tremendously. Core of this research is to design a PLL with wide tuning range and dynamic phase shift feature, which is implemented in the Integrated Circuits level. In line with fierce competition and fast-paced semiconductor industry, PLL design with above features are definitely most sought after, as it will tremendously reduce turn-around time, cost and effort for a project. Wide tuning range is achieved by introducing new Voltage Control Oscillator architecture, which will be able to provide wide tuning range without using very high KVCO. The new architecture proposed in this project is in differential input structure and consists of MOSFETs and capacitors; thus the area of implementation is small.Besides, extra feature which is proposed in this PLL is Dynamic Phase Shift feature. Dynamically tunable phase shift is important since the accuracy of the phase could be adjusted without having to reprogram the PLL, thus saving a lot of time. Dynamic Phase Shift feature is a new idea, which its design is implemented by using UP/DOWN counters, OR and AND gates. The complete design includes synchronous system design work such as state machine, diagram and truth table for system simplification. This proposed design achieved all specifications with wide-tuning range of 600MHz to 1300MHz is achieved with control voltage swing of 0.9V to 1.5V. Besides, the maximum static phase error measured in the simulation is 66ps, which is smaller than 200ps specification. Highest Period Jitter is 181ps while Cycle-to-Cycle Jitter is 55ps. Both types of jitter are within specification; lower than 300ps. Dynamic Phase Shift also successfully implemented where the UP/DN signal as the control to indicate either the phase is to be shifted up or down

A STUDY ON LOW-PHASE-NOISE 77-GHZ CMOS TRANSMITTER FOR FMCW RADAR

학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2017. 2. 남상욱.This thesis presents design methodology and experimental verification of a low-phase-noise 77-GHz CMOS FMCW (Frequency Modulated Continuous Wave) radar transmitter. It is quite difficult to design a low-phase-noise signal generator at millimeter-wave frequencies in CMOS because gain of CMOS transistors is extremely low at those frequencies. When using a frequency multiplier, it is relatively advantageous to design a low-phase-noise signal source because a VCO can be designed at lower frequency band where gain of active devices is high. When using multiple stage frequency multipliers to achieve low-phase-noise performance, the operating frequency range can be reduced and DC power consumption can be increased. Therefore, in this thesis, two methods for realizing 77-GHz CMOS low-phase-noise signal source have been proposed. One method is to combine a ×6 frequency multiplier and a 12.8-GHz FMCW signal generator. In this case, a VCO, an injection-locked VCO buffer, a ×3 frequency multiplier (tripler), and a ×2 frequency multiplier (doubler) constituting the 77-GHz signal generator are designed as a four-stage coupled injection-locked oscillator (ILO) chain which is oscillated and injected into the output signal of the preceding stage. The VCO used in the 12.8-GHz PLL (phase locked loop) was designed using linearized transconductance (LiT: Linearized Transconductance) technology to have low phase noise characteristics and was designed to be simpler than the existing LiT VCO using a 3:2 transformer. Since the PLL is designed as the integer-N type, an external frequency modulated triangular reference signal must be injected into the phase frequency detector (PFD) of the PLL to generate the FMCW signal. The fabricated transmitter chip supports FMCW output signals in the 76.81-77.95 GHz band when supplied with the external reference triangular signal from 50.00 to 50.75 MHz. The RF output power is about 8.9 dBm and consumes 116.7 mW of DC power. The measured phase noise is -91.16 dBc/Hz at the 1-MHz offset of the 76.81-GHz carrier frequency, which is the lowest phase noise characteristic of the previously announced 77-GHz CMOS transmitter and transceiver. A transmitter module for 77-GHz radar performance measurement was fabricated by combining the transmitter chip with the on-chip feeder that can solve the millimeter-wave packaging problem. The other is a method of combining a ×28 frequency multiplier and a 2.75-GHz FMCW signal generator. As in the previous method, the VCO, a ×7 multiplier, and two ×2 multipliers constituting the 77-GHz signal generator are each designed as a 4-stage ILO chain. The VCO used in the 2.75-GHz PLL is designed as a class-C type that improves the startup problem to have low-phase-noise characteristics. As in the previous case, an integer-N type PLL is used. The fabricated transmitter chip supports FMCW output signals in the 76.26-78.23 GHz band when supplied with the external reference triangular signal from 42.55 to 43.65 MHz. The RF output power is about -18 dBm and consumes 195.4 mW of DC power. The measured phase noise is -93.64 dBc/Hz at the 1-MHz offset of the 78.13-GHz carrier frequency, which is even lower phase noise characteristic than the ×6 frequency multiplier based transmitter chip.Chapter 1. Introduction 1 1.1 Types and Applications of Automotive Radars 2 1.1 Research Strategy 7 Chapter 2. Frequency and Architecture selection 12 2.1 LiT VCO 14 2.2 Class-C VCO 19 2.3 Injection-Locked Oscillator Chain 24 2.4 Summary 29 Chapter 3. 77-GHz FMCW Radar Transmitter with 12.8-GHz PLL and 6 Frequency Multiplier 30 3.1 Proposed LiT VCO 33 3.2 6 Multiplier and Power Amplifier 40 3.3 Measurement Results 46 3.3.1 LiT VCO Measurement Results 46 3.3.2 77-GHz Transmitter (v1) Measurement Results 49 3.4 Summary 60 Chapter 4. 77-GHz FMCW Radar Transmitter with 2.75-GHz PLL and 28 Frequency Multiplier 62 4.1 Proposed class-C VCO 65 4.2 28 Multiplier and Power Amplifier 73 4.3 Measurement Results 80 4.3.1 Class-C VCO Measurement Results 80 4.3.2 77-GHz Transmitter (v2) Measurement Results 83 4.4 Summary 90 Chapter 5. Conclusion 92 Bibliography 94 Abstract 97Docto

A 6.7-to-9.2GHz 55nm CMOS hybrid Class-B/Class-C cellular TX VCO

The design of very-wide-band CMOS voltage-controlled oscillators (VCOs) compliant with the phase-noise specifications of cellular transmitters is non-trivial, especially considering the GSM standard, where the phase noise exhibited by the local oscillator (LO, generated by the cascade of VCO, buffers, and usually frequency dividers) should be several dB below -162dBc/Hz at 20MHz frequency offset from the carrier. As shown in [1], challenging phase-noise requirements can embrace the WCDMA transmitter as well (e.g. -166dBc/Hz at 45MHz frequency offset for WCDMA band VIII), if cheap antenna duplexers are chosen to minimize costs. In such scenarios, and particularly in the very relevant case of WCDMA transmitting at moderate power levels, the LO power efficiency is still one of the limiting factors for a long-lasting battery life, motivating the ongoing quest for VCO power optimization. © 2012 IEEE