Discrete-Time Mixing Receiver Architecture for RF-Sampling Software-Defined Radio

A discrete-time (DT) mixing architecture for RF-sampling receivers is presented. This architecture makes RF sampling more suitable for software-defined radio (SDR) as it achieves wideband quadrature demodulation and wideband harmonic rejection. The paper consists of two parts. In the first part, different downconversion techniques are classified and compared, leading to the definition of a DT mixing concept. The suitability of CT-mixing and RF-sampling receivers to SDR is also discussed. In the second part, we elaborate the DT-mixing architecture, which can be realized by de-multiplexing. Simulation shows a wideband 90° phase shift between I and Q outputs without systematic channel bandwidth limitation. Oversampling and harmonic rejection relaxes RF pre-filtering and reduces noise and interference folding. A proof-of-concept DT-mixing downconverter has been built in 65 nm CMOS, for 0.2 to 0.9 GHz RF band employing 8-times oversampling. It can reject 2nd to 6th harmonics by 40 dB typically and without systematic channel bandwidth limitation. Without an LNA, it achieves a gain of -0.5 to 2.5 dB, a DSB noise figure of 18 to 20 dB, an IIP3 = +10 dBm, and an IIP2 = +53 dBm, while consuming less than 19 mW including multiphase clock generation

Digitally-Enhanced Software-Defined Radio Receiver Robust to Out-of-Band Interference

A software-defined radio (SDR) receiver with improved robustness to out-of-band interference (OBI) is presented. Two main challenges are identified for an OBI-robust SDR receiver: out-of-band nonlinearity and harmonic mixing. Voltage gain at RF is avoided, and instead realized at baseband in combination with low-pass filtering to mitigate blockers and improve out-of-band IIP3. Two alternative “iterative” harmonic-rejection (HR) techniques are presented to achieve high HR robust to mismatch: a) an analog two-stage polyphase HR concept, which enhances the HR to more than 60 dB; b) a digital adaptive interference cancelling (AIC) technique, which can suppress one dominating harmonic by at least 80 dB. An accurate multiphase clock generator is presented for a mismatch-robust HR. A proof-of-concept receiver is implemented in 65 nm CMOS. Measurements show 34 dB gain, 4 dB NF, and 3.5 dBm in-band IIP3 while the out-of-band IIP3 is + 16 dBm without fine tuning. The measured RF bandwidth is up to 6 GHz and the 8-phase LO works up to 0.9 GHz (master clock up to 7.2 GHz). At 0.8 GHz LO, the analog two-stage polyphase HR achieves a second to sixth order HR > dB over 40 chips, while the digital AIC technique achieves HR > 80 dB for the dominating harmonic. The total power consumption is 50 mA from a 1.2 V supply

High Speed Integrated Circuits for High Speed Coherent Optical Communications

With the development of (sub) THz transistor technologies, high speed integrated circuits up to sub-THz frequencies are now feasible. These high speed and wide bandwidth ICs can improve the performance of optical components, coherent optical fiber communication, and imaging systems. In current optical systems, electrical ICs are used primarily as driving amplifiers for optical modulators, and in receiver chains including TIAs, AGCs, LPFs, ADCs and DSPs. However, there are numerous potential applications in optics using high speed ICs, and different approaches may be required for more efficient, compact and flexible optical systems.This dissertation will discuss three different approaches for optical components and communication systems using high speed ICs: a homodyne optical phase locked loop (OPLL), a heterodyne OPLL, and a new WDM receiver architecture.The homodyne OPLL receiver is designed for short-link optical communication systems using coherent modulation for high spectral efficiency. The phase-locked coherent receiver can recover the transmitted data without requiring complex back-end digital signal processing to recover the phase of the received optical carrier. The main components of the homodyne OPLL are a photonic IC (PIC), an electrical IC (EIC), and a loop filter. One major challenge in OPLL development is loop bandwidth; this must be of order 1 GHz in order for the loop to adequately track and suppress the phase fluctuations of the locked laser, yet a 1 GHz loop bandwidth demands small (<100 ps) propagation delays if the loop is to be stable. Monolithic integration of the high-speed loop components into one electrical and one photonic IC decreases the total loop delay. We have designed and demonstrated an OPLL with a compact size of 10 × 10 mm2, stably operating with a loop bandwidth of 1.1 GHz, a loop delay of 120 ps, a pull-in time of 0.55 μs and lock time of <10 ns. The coherent receiver can receive 40 Gb/s BPSK data with a bit error rate (BER) of <10-7, and operates up to 35 Gb/s with BER 10-12.The thesis also describes heterodyne OPLLs. These can be used to synthesize optical wavelengths of a broad bandwidth (optical wavelength synthesis) with narrow linewidth and with fast frequency switching. There are many applications of such narrow linewidth optical signal sources, including low phase noise mm-wave and THz-signal sources, wavelength-division-multiplexed optical transmitters, and coherent imaging and sensor systems. The heterodyne OPLL also has the same stability issues (loop delay and sensitivity) as the homodyne OPLL. In the EIC, a single sideband mixer operating using digital design principles (DSSBM) enables precisely controlled sweeping of the frequency of the locked laser, with control of the sign of the frequency offset. The loop's phase and frequency difference detector (PFD) uses digital design techniques to make the OPLL loop parameters only weakly sensitive to optical signal levels or optical or electrical component gains. The heterodyne OPLL operates stably with a loop bandwidth of 550 MHz and loop delay of <200 ps. An initial OPLL design exhibited optical frequency (wavelength) synthesis from -6 GHz to -2 GHz and from 2 GHz to 9 GHz. An improved OPLL reached frequency tuning up to 25 GHz. The homodyne OPLL exhibits -110 dBc/Hz phase noise at 10 MHz offset and -80 dBc/Hz at 5 kHz offset.Finally, the thesis describes a new WDM receiver architecture using broadband electrical ICs. In the proposed WDM receiver, a set of received signals at different optical wavelengths are mixed against a single optical local oscillator. This mixing converts the WDM channels to electrical signals in the receiver photocurrent, with each WDM signal being converted to an RF sub-carrier of different frequency. An electrical IC then separately converts each sub-carrier signal to baseband using single-sideband mixers and quadrature local oscillators. The proposed receiver needs less complex hardware than the arrays of wavelength-sensitive receivers now used for WDM, and can readily adjust to changes in the WDM channel frequencies. The proposed WDM receiver concept was demonstrated through several system experiments. Image rejection of greater than 25 dB, adjacent channel suppression of greater than 20 dB, operation with gridless channels, and six-channel data reception at a total 15 Gb/s (2.5 Gb/s BPSK × 6-channels) were demonstrated

Novel RF CMOS Integrated Circuits and Systems for Broadband Dielectric Spectroscopy

Broadband dielectric spectroscopy has proven to be a valuable technique for characterization of chemicals and biomaterials. It has the great potential to become an indispensable and cost-effective tool in point-of-care medical applications due to its label-free and non-invasive operation. However, most of the existing dielectric spectroscopy instruments require bulky, heavy and expensive measurement set-up, restricting their use to only special applications in industry and laboratories. Therefore, integrated dielectric spectroscopy on silicon capable of direct detection of chemicals/biomaterials' complex permittivity can yield significant cost and size reduction, system integration, portability, enormous processing, and high throughput. A CMOS wideband dielectric spectroscopy system is proposed for chemical and biological material characterization. The complex permittivity detection is performed using a configurable harmonic-rejecting receiver capable of indirectly measuring the complex admittance of sensing capacitor exposed to the material-under-test (MUT) and subject to RF signal excitation with a frequency range of 0.62-10 GHz. The sensing capacitor is embedded in a voltage divider topology with a fixed capacitor and the relative variations in the magnitude and phase of the voltages across the capacitors are used to find the real and imaginary parts of the permittivity. The sensor achieves an rms permittivity error of less than 1% over the entire operation bandwidth. Using a sub-harmonic mixing scheme, the system can perform complex permittivity measurements from 0.62 to 10 GHz while requiring an input signal source with frequency range of only from 5 to 10 GHz. Thereby, the permittivity measurement system can be easily made self-sustained by implementing a 5-10 GHz frequency synthesizer on the same chip. One of the key building blocks in such a frequency synthesizer is the voltage-controlled oscillator (VCO) which has to cover an octave of frequency range. A novel low-phase-noise wide-tuning range VCO is presented using a triple-band LC resonator. The implemented VCO in 0.18μm CMOS technology achieves a continuous tuning range of 86.7% from 5.12 GHz to 12.95 GHz while drawing 5 to 10 mA current from 1-V supply. The measured phase noise at 1 MHz offset from carrier frequencies of 5.9, 9.12 and 12.25 GHz is -122.9, -117.1 and -110.5 dBc/Hz, respectively. Also, a dual-band quadrature voltage-controlled oscillator (QVCO) is presented using a transformer-based high-order LC-ring resonator which inherently provides quadrature signals without requiring noisy coupling transistors as in traditional approaches. The proposed resonator shows two possible oscillation frequencies which are exploited to realize a wide-tuning range QVCO employing a mode-switching transistor network. Due to the use of transformers, the oscillator has minimal area penalty compared to the conventional designs. The implemented prototype in a 65-nm CMOS process achieves a continuous tuning range of 77.8% from 2.75 GHz to 6.25 GHz while consuming 9.7 to 15.6 mA current from 0.6-V supply. The measured phase noise figure-of-merit (FoM) at 1 MHz offset ranges from 184 dB to 188.2 dB throughout the entire tuning range. The QVCO also exhibits good quadrature accuracy with 1.5º maximum phase error and occupies a relatively small silicon area of 0.35 mm^2