A low-voltage RF-CMOS receiver front-end for a wireless fall detection microsystem

Dissertação para obtenção do Grau de Mestre em Engenharia Eletrotécnica e de Computadores, pela Universidade Nova de Ciências e TecnologiaIn this thesis a Low Noise Amplifier-Mixer, the LM, is presented. In the Low Noise Amplifier a common-gate, a common-source and a buffer were used and the last one with the target to work in single-end configuration. A typical structure common-gate was used in the Mixer. The development of this structure had as goal, the implementation of a circuit capable to be used in a fall detection system for disable patients, monitoring the state and behavior remotely by an hospital. The conception of this circuit did not have only the objective, the prevention of falls, but also the contribute for the Medicine enrichment, as well as the research in several institutions. It was developed to cover ISM and WMTS frequency bands since 400 to 900MHz and to operate at low voltage in a range values between 0.6 and 1.2 V. The system was totally implemented with MOSFETs without reactive elements using the UMC CMOS 130 nm technology. Some techniques are used in design and optimizing with the target of low voltage and low consumption. The circuit present a total consumption of 11.5 mW extracted from a supply voltage of 1.2 V and a consumption of 3.5 mW extracted from a supply voltage of 0.6 V

A 2.3-dB NF CMOS low voltage LNA optimized for medical applications at 600MHz

In this paper it is presented a balun LNA, with voltage gain control that combines a common-gate and common-source stage, in which transistors biased in triode region replace the resistive loads. This last approach in conjunction with a dynamic threshold reduction technique allows a low supply voltage operation. Furthermore, a significant chip area reduction can be exploited by adopting an inductor-less configuration. Simulations results with a 130 nm CMOS technology show that the gain is up to 19.3 dB and the NF is below 2.3 dB. The total dissipation is 4 mW, leading to an FOM of 2.26 for 0.6 V supply