Linearity vs. Power Consumption of CMOS LNAs in LTE Systems

This paper presents a study of linearity in wideband CMOS low noise amplifiers (LNA) and its relationship to power consumption in context of Long Term Evolution (LTE) system. Using proposed figure of merit to compare 35 state-of-the-art LNA circuits published in recent years, the paper shows a proportional but relatively weak dependence between amplifier performance (that is combined linearity, noise figure and gain) with power consumption. As a result, the predicted increase of LNA performance, necessary to satisfy stringent linearity specifications of LTE standard, may require a significant increase in power, a critical budget planning aspect for both handheld devices and base stations operating in small cells

HIGH LINEARITY UNIVERSAL LNA DESIGNS FOR NEXT GENERATION WIRELESS APPLICATIONS

Design of the next generation (4G) systems is one of the most active and important area of research and development in wireless communications. The 2G and 3G technologies will still co-exist with the 4G for a certain period of time. Other applications such as wireless LAN (Local Area Network) and RFID are also widely used. As a result, there emerges a trend towards integrating multiple wireless functionalities into a single mobile device. Low noise amplifier (LNA), the most critical component of the receiver front-end, determines the sensitivity and noise figure of the receiver and is indispensable for the complete system. To satisfy the need for higher performance and diversity of wireless communication systems, three LNAs with different structures and techniques are proposed in the thesis based on the 4G applications. The first LNA is designed and optimized specifically for LTE applications, which could be easily added to the existing system to support different standards. In this cascode LNA, the nonlinearity coming from the common source (CS) and common gate (CG) stages are analyzed in detail, and a novel linear structure is proposed to enhance the linearity in a relatively wide bandwidth. The LNA has a bandwidth of 900MHz with the linearity of greater than 7.5dBm at the central frequency of 1.2GHz. Testing results show that the proposed structure effectively increases and maintains linearity of the LNA in a wide bandwidth. However, a broadband LNA that covers multiple frequency ranges appears more attractive due to system simplicity and low cost. The second design, a wideband LNA, is proposed to cover multiple wireless standards, such as LTE, RFID, GSM, and CDMA. A novel input-matching network is proposed to relax the tradeoff among noise figure and bandwidth. A high gain (>10dB) in a wide frequency range (1-3GHz) and a minimum NF of 2.5dB are achieved. The LNA consumes only 7mW on a 1.2V supply. The first and second LNAs are designed mainly for the LTE standard because it is the most widely used standard in the 4G communication systems. However, WiMAX, another 4G standard, is also being widely used in many applications. The third design targets on covering both the LTE and the WiMAX. An improved noise cancelling technique with gain enhancing structure is proposed in this design and the bandwidth is enlarged to 8GHz. In this frequency range, a maximum power gain of 14.5dB and a NF of 2.6-4.3dB are achieved. The core area of this LNA is 0.46x0.67mm2 and it consumes 17mW from a 1.2V supply. The three designs in the thesis work are proposed for the multi-standard applications based on the realization of the 4G technologies. The performance tradeoff among noise, linearity, and broadband impedance matching are explored and three new techniques are proposed for the tradeoff relaxation. The measurement results indicate the techniques effectively extend the bandwidth and suppress the increase of the NF and nonlinearity at high frequencies. The three proposed structures can be easily applied to the wideband and multi-standard LNA design

ANALYSIS AND DESIGN OF SILICON-BASED MILLIMETER-WAVE AMPLIFIERS

Ph.DDOCTOR OF PHILOSOPH

Design of low power CMOS UWB transceiver ICs

Master'sMASTER OF ENGINEERIN

A Fully Integrated CMOS Receiver.

The rapidly growing wireless communication market is creating an increasing demand for low-cost highly-integrated radio frequency (RF) communication systems. This dissertation focuses on techniques to enable fully-integrated, wireless receivers incorporating all passive components, including the antenna, and also incorporating baseband synchronization on-chip. Not only is the receiver small in size and requires very low power, but it also delivers synchronized demodulated data. This research targets applications such as implantable neuroprosthetic devices and environmental wireless sensors, which need short range, low data-rate wireless communications but a long lifetime. To achieve these goals, the super-regenerative architecture is used, since power consumption with this architecture is low due to the simplified receiver architecture. This dissertation presents a 5GHz single chip receiver incorporating a compact on-chip 5 GHz slot antenna (50 times smaller than traditional dipole antennas) and a digital received data synchronization. A compact capacitively-loaded 5 GHz standing-wave resonator is used to improve the energy efficiency. An all-digital PLL timing scheme synchronizes the received data clock. A new type of low-power envelope detector is incorporated to increase the data rate and efficiency. The receiver achieves a data rate up to 1.2 Mb/s, dissipates 6.6 mW from a 1.5 V supply. The novel on-chip capacitively-loaded, transmission-line-standing-wave resonator is employed instead of a conventional low-Q on-chip inductor. The simulated quality factor of the resonator is very high (35), and is verified by phase-noise measurements of a prototype 5GHz Voltage Control Oscillator (VCO) incorporating this resonator. The prototype VCO, implemented in 0.13 µm CMOS, dissipates 3 mW from a 1.2 V supply, and achieves a measured phase noise of -117 dBc/Hz at a 1 MHz offset. In the on-chip antenna an efficient shielding technique is used to shield the antenna from the low-resistivity substrate underneath. Two standalone on-chip slot antenna prototypes were designed and fabricated in 0.13 µm CMOS. The 9 GHz prototype occupies a die area of only 0.3 mm2, has an active gain of -4.4 dBi and an efficiency of 9%. The second prototype occupies a die area of 0.47 mm2, and achieves a passive gain of approximately -17.0 dBi at 5 GHz.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/60739/1/shid_1.pd

A MOSFET-only wideband LNA exploiting thermal noise canceling and gain optimization

Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para a obtenção do grau de Mestre em Engenharia Electrotécnica e de ComputadoresIn this thesis a MOSFET-only implementation of a balun LNA is presended. This LNA is based on the combination of a common-gate and a common-source stage with canceling of the noise of the common-gate stage. In this circuit, resistors are replaced by transistors, to reduce area and cost, and minimize the e ect of process and supply variations and mismatches. In addition we obtain a higher gain for the same voltage drop. Thus, the LNA gain is optimized, and the noise gure(NF) is reduced. We derive equations for the gain, input matching, and NF. The performance of this new topology is compared with that of a conventional LNA with resistors. Simulation results with a 130 nm CMOS technology show that we obtain a balun LNA with a peak 20.2 dB gain (about 2 dB improvement), and a spot NF lower than 2.4 dB. The total power consumption is only 4.8 mW for a bandwidth wide than 5 GHz

Digitally-Assisted RF IC Design Techniques for Reliable Performance

Semiconductor industries have competitively scaled down CMOS devices to attain benefits of low cost, high performance, and high integration density in digital integrated circuits. On the other hand, deep scaled technologies inextricably accompany a large process variation, supply voltage scaling, and reduction in breakdown voltages of transistors. When it comes to RF/analog IC design, CMOS scaling adversely affects its reliability due to large performance variation and limited linearity. For addressing the issues related to variations and linearity, this research proposes the following digitally-assisted RF circuit design techniques: self-calibration system for RF phase shifters and wide dynamic range LNAs. Due to PVT variations in scaled technologies, RF phase shifter design becomes more challenging with device scaling. In the proposed self-calibration topology, we devised a novel phase sensing method and a pulsewidth-to-digital converter. The feedback controller is also designed in digital domain, which is robust to PVT variations. These unique techniques enable a sensing/control loop tolerant to PVT variations. The self-calibration loop was applied to a 7 to 13GHz phase shifter. With the calibration, the estimated phase error is less than 2 degrees. To overcome the linearity issue in scaled technologies, a digitally-controlled dual-mode LNA design is presented. A narrowband (5.1GHz) and a wideband (0.8 to 6GHz) LNA can be toggled between high-gain and high-linearity modes by digital control bits according to the input signal power. A compact design, which provides negligible performance degradation by additional circuitry, is achieved by sharing most of the components between the two operation modes. The narrowband and the wideband LNA achieves an input-referred P1dB of -1.8dBm and +4.2dBm, respectively

Survey on individual components for a 5 GHz receiver system using 130 nm CMOS technology

La intención de esta tesis es recopilar información desde un punto de vista general sobre los diferentes tipos de componentes utilizados en un receptor de señales a 5 GHz utilizando tecnología CMOS. Se ha realizado una descripción y análisis de cada uno de los componentes que forman el sistema, destacando diferentes tipos de configuraciones, figuras de mérito y otros parámetros. Se muestra una tabla resumen al final de cada sección, comparando algunos diseños que se han ido presentando a lo largo de los años en conferencias internacionales de la IEEE.The intention of this thesis is to gather information from an overview point about the different types of components used in a 5 GHz receiver using CMOS technology. A review of each of the components that form the system has been made, highlighting different types of configurations, figure of merits and parameters. A summary table is shown at the end of each section, comparing many designs that have been presented over the years at international conferences of the IEEE.Departamento de Ingeniería Energética y FluidomecánicaGrado en Ingeniería en Electrónica Industrial y Automátic

CMOS Wide Tuning Gilbert Mixer with Controllable IF Bandwidth in Upcoming RF Front End for Multi-Band Multi-Standard Applications

The current global system for mobile communications, wireless local area, Bluetooth, and ultra-wideband demands a multi-band/multi-standard RF front end that can access all the available bandwidth specifications. Trade-offs occur between power consumption, noise figure, and linearity in CMOS Gilbert mixer wide tuning designs. Besides, it is preferable to have a constant IF bandwidth for different gain settings as the bandwidth varies with the load impedance when an RF receiver is tuned to a higher frequency. My dissertation consists of three parts. First, a tunable constant IF bandwidth Gilbert mixer is introduced for multi-band standard wireless applications such as 802.11 a/b/g WLAN and 802.16a WMAN, followed by a design synthesis approach to optimize the mixer to meet the design center frequency range, constant IF bandwidth, and power. A synthesized Gilbert mixer with effective prototype inductors, designed in 180 nm CMOS process, is presented in this dissertation with the tunability of 200 MHz IF, a constant IF bandwidth of 50 MHz, a conversion gain of 13.75 dB, a noise figure of 2.9dB, 1-dB compression point of -15.19 dBm, IIP3 of -5.8 dBm, and a power of 9 mW. Next, mixer inductor loss and equivalent electronic circuit analysis are presented to optimize the approach to offset center frequency and bandwidth inaccuracy due to the inductance loss between the actual and ideal prototype inductor. The proposed tunable Gilbert mixer simulations present a tunable IF of 177.8 MHz, an IF bandwidth of 87.57 MHz, a conversion gain of 7.4 dB, a noise figure of 3.14 dB, 1-dB compression point of -17.1 dBm, and IIP3 of -19.8 dBm. Last, a CMOS integrated wide frequency span CMOS low noise amplifier is integrated with the tunable Gilbert mixer to achieve a 27.68 dB conversion gain, a 3.47 dB low noise figure, -14.6 dBm 1-dB compression point, and -18.6 dBm IIP3

CMOS design enhancement techniques for RF receivers. Analysis, design and implementation of RF receivers with component enhancement and component reduction for improved sensitivity and reduced cost, using CMOS technology.

Silicon CMOS Technology is now the preferred process for low power wireless communication devices, although currently much noisier and slower than comparable processes such as SiGe Bipolar and GaAs technologies. However, due to ever-reducing gate sizes and correspondingly higher speeds, higher Ft CMOS processes are increasingly competitive, especially in low power wireless systems such as Bluetooth, Wireless USB, Wimax, Zigbee and W-CDMA transceivers. With the current 32 nm gate sized devices, speeds of 100 GHz and beyond are well within the horizon for CMOS technology, but at a reduced operational voltage, even with thicker gate oxides as compensation. This thesis investigates newer techniques, both from a systems point of view and at a circuit level, to implement an efficient transceiver design that will produce a more sensitive receiver, overcoming the noise disadvantage of using CMOS Silicon. As a starting point, the overall components and available SoC were investigated, together with their architecture. Two novel techniques were developed during this investigation. The first was a high compression point LNA design giving a lower overall systems noise figure for the receiver. The second was an innovative means of matching circuits with low Q components, which enabled the use of smaller inductors and reduced the attenuation loss of the components, the resulting smaller circuit die size leading to smaller and lower cost commercial radio equipment. Both these techniques have had patents filed by the University. Finally, the overall design was laid out for fabrication, taking into account package constraints and bond-wire effects and other parasitic EMC effects