2 research outputs found

    ์ „์› ์žก์Œ์— ๋‘”๊ฐํ•œ ๊ณ ๋ฆฌ ๋ฐœ์ง„๊ธฐ์™€ ๋””์ง€ํ„ธ ์œ„์ƒ ๋™๊ธฐ ํšŒ๋กœ ์„ค๊ณ„

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    ํ•™์œ„๋…ผ๋ฌธ(์„์‚ฌ) -- ์„œ์šธ๋Œ€ํ•™๊ต๋Œ€ํ•™์› : ๊ณต๊ณผ๋Œ€ํ•™ ์ „๊ธฐยท์ •๋ณด๊ณตํ•™๋ถ€, 2023. 2. ์ •๋•๊ท .One of the critical blocks integrated into the PAM4-binary bridge, bridging the high-speed DRAM and the low-speed DRAM Tester, is an All-Digital Phase-Locked Loop (ADPLL). Since the transmitter and receiver operate based on the clock signal, whose frequency is doubled compared to the clock signal transmitted from the memory tester by the ADPLL, the ADPLL needs to have a low RMS jitter and high Process-Voltage-Temperature (PVT) tolerance characteristics. However, due to the complex bridge circuit sharing the supply power with the ADPLL, power supply noise (PSN) is the main challenge for the Ring Oscillator (RO) based ADPLL. This thesis presents a Supply Noise-Insensitive RO-based ADPLL. A supply noise absorbing shunt regulator composed of 31-bit NMOS transistors Array is embedded parallel to the RO. Output codes from the Digital Loop Filter (DLF) not only control the Digitally-Controlled Resistor (DCR) but also the transconductance of the NMOS transistor Array. The proposed ADPLL is fabricated in the 40-nm CMOS technology. The ADPLL occupies an active area of 0.06 mm2 and consumes power 13.5 mW, while the proposed scheme only takes 6.6% and 2.8% of it, respectively. At 8 GHz operation, the proposed ADPLL achieves an RMS jitter of 3.255 ps with 1-MHz 40-mVpp sinusoidal noise injected into the supply voltage. With the Supply Noise-Insensitive technique, the RMS jitter lowers to 1.268 ps.๊ณ ์† DRAM๊ณผ ์ €์† ๊ฒ€์‚ฌ ์žฅ๋น„๋ฅผ ์—ฐ๊ฒฐํ•˜๋Š” 4๋‹จ๊ณ„ ํŽ„์Šค ์ง„ํญ ๋ณ€์กฐ-2์ง„๋ฒ• ๋ธŒ๋ฆฌ์ง€ ์นฉ์˜ ์ฃผ์š” ๊ตฌ์„ฑ ํšŒ๋กœ ์ค‘์— ๋””์ง€ํ„ธ ์œ„์ƒ ๋™๊ธฐ ํšŒ๋กœ๊ฐ€ ์žˆ๋‹ค. ์ด ํšŒ๋กœ๊ฐ€ ๊ฒ€์‚ฌ ์žฅ๋น„์—์„œ ์˜จ ์ฐธ์กฐ ํด๋ฝ์˜ ์ง„๋™์ˆ˜๋ฅผ 2๋ฐฐ๋กœ ๋น ๋ฅด๊ฒŒ ํ•˜์—ฌ ์ถœ๋ ฅํ•˜๊ณ , ๊ทธ ํด๋ฝ์„ ๊ธฐ์ค€์œผ๋กœ ์นฉ์˜ ์†ก์ˆ˜์‹  ํšŒ๋กœ๋“ค์ด ๋™์ž‘ํ•˜๊ธฐ ๋•Œ๋ฌธ์— ๋‚ฎ์€ RMS ์ง€ํ„ฐ์™€ ๊ณต์ •-์ „์••-์˜จ๋„ ๋ณ€ํ™”์— ๋‘”๊ฐํ•œ ์„ฑ๋Šฅ์ด ์š”๊ตฌ๋œ๋‹ค. ํ•˜์ง€๋งŒ, ์นฉ์˜ ๋ณต์žกํ•œ ํšŒ๋กœ๋“ค ๋•Œ๋ฌธ์— ๊ณ ๋ฆฌ ๋ฐœ์ง„๊ธฐ๋ฅผ ๊ธฐ๋ฐ˜์œผ๋กœ ํ•œ ์ด ํšŒ๋กœ์—๊ฒŒ ์ „์› ์ „์•• ์žก์Œ์ด ๊ฐ€์žฅ ํฐ ๋ฌธ์ œ์ ์ด ๋œ๋‹ค. ๋ณธ ๋…ผ๋ฌธ์€ ์ „์› ์žก์Œ์— ๋‘”๊ฐํ•œ ๊ณ ๋ฆฌ ๋ฐœ์ง„๊ธฐ๋ฅผ ๊ธฐ๋ฐ˜์œผ๋กœ ํ•œ ๋””์ง€ํ„ธ ์œ„์ƒ ๋™๊ธฐ ํšŒ๋กœ๋ฅผ ์ œ์•ˆํ•œ๋‹ค. ์ „์› ์žก์Œ์„ ํก์ˆ˜ํ•˜๋Š” ๋‹จ๋ฝ ๋ ˆ๊ทค๋ ˆ์ดํ„ฐ ์—ญํ• ์˜ 31-๋น„ํŠธNMOS ํŠธ๋žœ์ง€์Šคํ„ฐ ๋ฐฐ์—ด์ด ๊ณ ๋ฆฌ ๋ฐœ์ง„๊ธฐ์™€ ํ‰ํ–‰ํ•˜๊ฒŒ ๊ตฌํ˜„๋˜์—ˆ๋‹ค. ๋””์ง€ํ„ธ ์ œ์–ด ์ €ํ•ญ์„ ์กฐ์ ˆํ•˜๋Š” ๋””์ง€ํ„ธ ๋ฃจํ”„ ํ•„ํ„ฐ์—์„œ ์˜จ ํ–‰ ์กฐ์ • ๋น„ํŠธ๋“ค์ด NMOS ํŠธ๋žœ์ง€์Šคํ„ฐ ๋ฐฐ์—ด์˜ ํŠธ๋žœ์Šค์ปจ๋•ํ„ด์Šค๋„ ์กฐ์ ˆํ•˜๊ฒŒ ๋””์ž์ธํ•˜์˜€๋‹ค. ์ œ์•ˆ๋œ ๋””์ง€ํ„ธ ์œ„์ƒ ๋™๊ธฐ ํšŒ๋กœ๋Š” 40-nm CMOS ๊ณต์ •์œผ๋กœ ์ œ์ž‘๋˜์—ˆ๋‹ค. 0.06 mm2 ์˜ ๋ฉด์ ์„ ์ฐจ์ง€ํ•˜๊ณ  13.5 mW์˜ ์ „๋ ฅ์„ ์†Œ๋ชจํ•˜๋ฉฐ, ๊ณ ์•ˆ๋œ ์ „์› ์žก์Œ ํก์ˆ˜ ํšŒ๋กœ๋Š” ๊ฐ๊ฐ 0.0017 mm2์™€ 0.9mW, ์ฆ‰, ์ „์ฒด์˜ 6.6%์™€ 2.8%๋งŒ ์ฐจ์ง€ํ•˜์˜€๋‹ค. 8GHz ๋™์ž‘์—์„œ, ์ œ์•ˆ๋œ ํšŒ๋กœ๋Š” 1-MHz 40-mVpp ์‚ฌ์ธํŒŒ ์ „์› ์žก์Œ ์•„๋ž˜์—์„œ 3.255 ps์˜ RMS ์ง€ํ„ฐ๋ฅผ ๋ณด์˜€์ง€๋งŒ, ๊ณ ์•ˆ๋œ ํšŒ๋กœ์˜ ๋™์ž‘๊ณผ ํ•จ๊ป˜ 1.268 ps๋กœ ์ค„์—ˆ๋‹ค.CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 THESIS ORGANIZATION 4 CHAPTER 2 BACKGROUNDS 5 2.1 OVERVIEW 5 2.2 COMPOSITIONS OF THE ADPLL 8 2.2.1 TIME-TO-DIGITAL CONVERTER 8 2.2.2 DIGITAL LOOP FILTER 11 2.2.3 DIGITALLY CONTROLLED OSCILLATOR 14 2.2.4 PRIOR WORKS OF SUPPLY NOISE CANCELLATION 19 2.3 ADPLL LOOP ANALYSIS 21 2.3.1 LOOP TRANSFER FUNCTION 21 2.3.2 NOISE MODELING 23 CHAPTER 3 DESIGN OF SUPPLY NOISE-INSENSITIVE ADPLL 26 3.1 DESIGN CONSIDERATION 26 3.2 OVERALL ARCHITECTURE 28 3.3 PROPOSED CIRCUIT IMPLEMENTATION 30 3.3.1 PFD-TDC AND DIGITAL BLOCK 30 3.3.2 PROPOSED DCO WITH DCR 33 3.3.3 NMOS SHUNT REGULATOR ARRAY 37 3.3.4 SUPPLY SENSING AMPLIFIER 39 3.3.5 SUPPLY NOISE-INSENSITIVE TECHNIQUE 41 CHAPTER 4 MEASUREMENT RESULTS 43 4.1 CHIP PHOTOMICROGRAPH 43 4.2 MEASUREMENT SETUP 45 4.3 MEASUREMENT RESULTS 46 4.3.1 FREE-RUNNING DCO 46 4.3.2 CLOSED-LOOP PERFORMANCE 47 4.4 PERFORMANCE SUMMARY 49 CHAPTER 5 CONCLUSION 51 BIBLIOGRAPHY 52 ์ดˆ ๋ก 55์„

    ์ € ์žก์Œ ๋””์ง€ํ„ธ ์œ„์ƒ๋™๊ธฐ๋ฃจํ”„์˜ ํ•ฉ์„ฑ

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    ํ•™์œ„๋…ผ๋ฌธ (๋ฐ•์‚ฌ)-- ์„œ์šธ๋Œ€ํ•™๊ต ๋Œ€ํ•™์› : ์ „๊ธฐยท์ปดํ“จํ„ฐ๊ณตํ•™๋ถ€, 2014. 2. ์ •๋•๊ท .As a device scaling proceeds, Charge Pump PLL has been confronted by many design challenges. Especially, a leakage current in loop filter and reduced dynamic range due to a lower operating voltage make it difficult to adopt a conventional analog PLL architecture for a highly scaled technology. To solve these issues, All Digital PLL (ADPLL) has been widely studied recently. ADPLL mitigates a filter leakage and a reduced dynamic range issues by replacing the analog circuits with digital ones. However, it is still difficult to get a low jitter under low supply voltage. In this thesis, we propose a dual loop architecture to achieve a low jitter even with a low supply voltage. And bottom-up based multi-step TDC and DCO are proposed to meet both fine resolution and wide operation range. In the aspect of design methodology, ADPLL has relied on a full custom design method although ADPLL is fully described in HDL (Hardware Description Language). We propose a new cell based layout technique to automatically synthesize the whole circuit and layout. The test chip has no linearity degradation although it is fully synthesized using a commercially available auto P&R tool. We has implemented an all digital pixel clock generator using the proposed dual loop architecture and the cell based layout technique. The entire circuit is automatically synthesized using 28nm CMOS technology. And s-domain linear model is utilized to optimize the jitter of the dual-loop PLL. Test chip occupies 0.032mm2, and achieves a 15ps_rms integrated jitter although it has extremely low input reference clock of 100 kHz. The whole circuit operates at 1.0V and consumes only 3.1mW.Abstract i Lists of Figures vii Lists of Tables xiii 1. Introduction 1 1.1 Thesis Motivation and Organization 1 1.1.1 Motivation 1 1.1.2 Thesis Organization 2 1.2 PLL Design Issues in Scaled CMOS Technology 3 1.2.1 Low Supply Voltage 4 1.2.2 High Leakage Current 6 1.2.3 Device Reliability: NBTI, HCI, TDDB, EM 8 1.2.4 Mismatch due to Proximity Effects: WPE, STI 11 1.3 Overview of Clock Synthesizers 14 1.3.1 Dual Voltage Charge Pump PLL 14 1.3.2 DLL Based Edge Combining Clock Multiplier 16 1.3.3 Recirculation DLL 17 1.3.4 Reference Injected PLL 18 1.3.5 All Digital PLL 19 1.3.6 Flying Adder Clock Synthesizer 20 1.3.7 Dual Loop Hybrid PLL 21 1.3.8 Comparisons 23 2. Tutorial of ADPLL Design 25 2.1 Introduction 25 2.1.1 Motivation for a pure digital 25 2.1.2 Conversion to digital domain 26 2.2 Functional Blocks 26 2.2.1 TDC, and PFD/Charge Pump 26 2.2.2 Digital Loop Filter and Analog R/C Loop Filter 29 2.2.3 DCO and VCO 34 2.2.4 S-domain Model of the Whole Loop 34 2.2.5 ADPLL Loop Design Flow 36 2.3 S-domain Noise Model 41 2.3.1 Noise Transfer Functions 41 2.3.2 Quantization Noise due to Limited TDC Resolution 45 2.3.3 Quantization Noise due to Divider ฮ”ฮฃ Noise 46 2.3.4 Quantization Noise due to Limited DCO Resolution 47 2.3.5 Quantization Noise due to DCO ฮ”ฮฃ Dithering 48 2.3.6 Random Noise of DCO and Input Clock 50 2.3.7 Over-all Phase Noise 50 3. Synthesizable All Digital Pixel Clock PLL Design 53 3.1 Overview 53 3.1.1 Introduction of Pixel Clock PLL 53 3.1.1 Design Specifications 55 3.2 Proposed Architecture 60 3.2.1 All Digital Dual Loop PLL 60 3.2.2 2-step controlled TDC 61 3.2.3 3-step controlled DCO 64 3.2.4 Digital Loop Filter 76 3.3 S-domain Noise Model 78 3.4 Loop Parameter Optimization Based on the s-domain Model 85 3.5 RTL and Gate Level Circuit Design 88 3.5.1 Overview of the design flow 88 3.5.2 Behavioral Simulation and Gate level synthesis 89 3.5.1 Preventing a meta-stability 90 3.5.1 Reusable Coding Style 92 3.6 Layout Synthesis 94 3.6.1 Auto P&R 94 3.6.2 Design of Unit Cells 97 3.6.3 Linearity Degradation in Synthesized TDC 98 3.6.4 Linearity Degradation in Synthesized DCO 106 3.7 Experiment Results 109 3.7.1 DCO measurement 109 3.7.2 PLL measurement 113 3.8 Conclusions 117 A. Device Technology Scaling Trends 118 A.1. Motivation for Technology Scaling 118 A.2. Constant Field Scaling 120 A.3. Quasi Constant Voltage Scaling 123 A.4. Device Technology Trends in Real World 124 B. Spice Simulation Tip for a DCO 137 C. Phase Noise to Jitter Conversion 141 Bibliography 144 ์ดˆ๋ก 151Docto
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