226 research outputs found

    Trends and Challenges in CMOS Design for Emerging 60 GHz WPAN Applications

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    International audienceThe extensive growth of wireless communications industry is creating a big market opportunity. Wireless operators are currently searching for new solutions which would be implemented into the existing wireless communication networks to provide the broader bandwidth, the better quality and new value-added services. In the last decade, most commercial efforts were focused on the 1-10 GHz spectrum for voice and data applications for mobile phones and portable computers (Niknejad & Hashemi, 2008). Nowadays, the interest is growing in applications that use high rate wireless communications. Multigigabit- per-second communication requires a very large bandwidth. The Ultra-Wide Band (UWB) technology was basically used for this issue. However, this technology has some shortcomings including problems with interference and a limited data rate. Furthermore, the 3-5 GHz spectrum is relatively crowded with many interferers appearing in the WiFi bands (Niknejad & Hashemi, 2008). The use of millimeter wave frequency band is considered the most promising technology for broadband wireless. In 2001, the Federal Communications Commission (FCC) released a set of rules governing the use of spectrum between 57 and 66 GHz (Baldwin, 2007). Hence, a large bandwidth coupled with high allowable transmit power equals high possible data rates. Traditionally the implementation of 60 GHz radio technology required expensive technologies based on III-V compound semiconductors such as InP and GaAs (Smulders et al., 2007). The rapid progress of CMOS technology has enabled its application in millimeter wave applications. Currently, the transistors became small enough, consequently fast enough. As a result, the CMOS technology has become one of the most attractive choices in implementing 60 GHz radio due to its low cost and high level of integration (Doan et al., 2005). Despite the advantages of CMOS technology, the design of 60 GHz CMOS transceiver exhibits several challenges and difficulties that the designers must overcome. This chapter aims to explore the potential of the 60 GHz band in the use for emergent generation multi-gigabit wireless applications. The chapter presents a quick overview of the state-of-the-art of 60 GHz radio technology and its potentials to provide for high data rate and short range wireless communications. The chapter is organized as follows. Section 2 presents an overview about 60 GHz band. The advantages are presented to highlight the performance characteristics of this band. The opportunities of the physical layer of the IEEE 802.15.3c standard for emerging WPAN applications are discussed in section 3. The tremendous opportunities available with CMOS technology in the design of 60 GHz radio is discussed in section 4. Section 5 shows an example of 60 GHz radio system link. Some challenges and trade-offs on the design issues of circuits and systems for 60 GHz band are reported in section 6. Finally, section 7 presents the conclusion and some perspectives on future directions

    Millimeter-wave Wireless LAN and its Extension toward 5G Heterogeneous Networks

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    Millimeter-wave (mmw) frequency bands, especially 60 GHz unlicensed band, are considered as a promising solution for gigabit short range wireless communication systems. IEEE standard 802.11ad, also known as WiGig, is standardized for the usage of the 60 GHz unlicensed band for wireless local area networks (WLANs). By using this mmw WLAN, multi-Gbps rate can be achieved to support bandwidth-intensive multimedia applications. Exhaustive search along with beamforming (BF) is usually used to overcome 60 GHz channel propagation loss and accomplish data transmissions in such mmw WLANs. Because of its short range transmission with a high susceptibility to path blocking, multiple number of mmw access points (APs) should be used to fully cover a typical target environment for future high capacity multi-Gbps WLANs. Therefore, coordination among mmw APs is highly needed to overcome packet collisions resulting from un-coordinated exhaustive search BF and to increase the total capacity of mmw WLANs. In this paper, we firstly give the current status of mmw WLANs with our developed WiGig AP prototype. Then, we highlight the great need for coordinated transmissions among mmw APs as a key enabler for future high capacity mmw WLANs. Two different types of coordinated mmw WLAN architecture are introduced. One is the distributed antenna type architecture to realize centralized coordination, while the other is an autonomous coordination with the assistance of legacy Wi-Fi signaling. Moreover, two heterogeneous network (HetNet) architectures are also introduced to efficiently extend the coordinated mmw WLANs to be used for future 5th Generation (5G) cellular networks.Comment: 18 pages, 24 figures, accepted, invited paper

    Integrated Circuit and Antenna Technology for Millimeter-wave Phased Array Radio Front-end

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    Ever growing demands for higher data rate and bandwidth are pushing extremely high data rate wireless applications to millimeter-wave band (30-300GHz), where sufficient bandwidth is available and high data rate wireless can be achieved without using complex modulation schemes. In addition to the communication applications, millimeter-wave band has enabled novel short range and long range radar sensors for automotive as well as high resolution imaging systems for medical and security. Small size, high gain antennas, unlicensed and worldwide availability of released bands for communication and a number of other applications are other advantages of the millimeter-wave band. The major obstacle for the wide deployment of commercial wireless and radar systems in this frequency range is the high cost and bulky nature of existing GaAs- and InP-based solutions. In recent years, with the rapid scaling and development of the silicon-based integrated circuit technologies such as CMOS and SiGe, low cost technologies have shown acceptable millimeter-wave performance, which can enable highly integrated millimeter-wave radio devices and reduce the cost significantly. Furthermore, at this range of frequencies, on-chip antenna becomes feasible and can be considered as an attractive solution that can further reduce the cost and complexity of the radio package. The propagation channel challenges for the realization of low cost and reliable silicon-based communication devices at millimeter-wave band are severe path loss as well as shadowing loss of human body. Silicon technology challenges are low-Q passive components, low breakdown voltage of active devices, and low efficiency of on-chip antennas. The main objective of this thesis is to investigate and to develop antenna and front-end for cost-effective silicon based millimeter-wave phased array radio architectures that can address above challenges for short range, high data rate wireless communication as well as radar applications. Although the proposed concepts and the results obtained in this research are general, as an important example, the application focus in this research is placed on the radio aspects of emerging 60 GHz communication system. For this particular but extremely important case, various aspects of the technology including standard, architecture, antenna options and indoor propagation channel at presence of a human body are studied. On-chip dielectric resonator antenna as a radiation efficiency improvement technique for an on-chip antenna on low resistivity silicon is presented, developed and proved by measurement. Radiation efficiency of about 50% was measured which is a significant improvement in the radiation efficiency of on-chip antennas. Also as a further step, integration of the proposed high efficiency antenna with an amplifier in transmit and receive configurations at 30 GHz is successfully demonstrated. For the implementation of a low cost millimeter-wave array antenna, miniaturized, and efficient antenna structures in a new integrated passive device technology using high resistivity silicon are designed and developed. Front-end circuit blocks such as variable gain LNA, continuous passive and active phase shifters are investigated, designed and developed for a 60GHz phased array radio in CMOS technology. Finally, two-element CMOS phased array front-ends based on passive and active phase shifting architectures are proposed, developed and compared

    Integration of 60-GHz Microstrip Antennas with CMOS Chip

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    Low-power CMOS front-ends for wireless personal area networks

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    The potential of implementing subthreshold radio frequency circuits in deep sub-micron CMOS technology was investigated for developing low-power front-ends for wireless personal area network (WPAN) applications. It was found that the higher transconductance to bias current ratio in weak inversion could be exploited in developing low-power wireless front-ends, if circuit techniques are employed to mitigate the higher device noise in subthreshold region. The first fully integrated subthreshold low noise amplifier was demonstrated in the GHz frequency range requiring only 260 μW of power consumption. Novel subthreshold variable gain stages and down-conversion mixers were developed. A 2.4 GHz receiver, consuming 540 μW of power, was implemented using a new subthreshold mixer by replacing the conventional active low noise amplifier by a series-resonant passive network that provides both input matching and voltage amplification. The first fully monolithic subthreshold CMOS receiver was also implemented with integrated subthreshold quadrature LO (Local Oscillator) chain for 2.4 GHz WPAN applications. Subthreshold operation, passive voltage amplification, and various low-power circuit techniques such as current reuse, stacking, and differential cross coupling were combined to lower the total power consumption to 2.6 mW. Extremely compact resistive feedback CMOS low noise amplifiers were presented as a cost-effective alternative to narrow band LNAs using high-Q inductors. Techniques to improve linearity and reduce power consumption were presented. The combination of high linearity, low noise figure, high broadband gain, extremely small die area and low power consumption made the proposed LNA architecture a compelling choice for many wireless applications.Ph.D.Committee Chair: Laskar, Joy; Committee Member: Chakraborty, Sudipto; Committee Member: Chang, Jae Joon; Committee Member: Divan, Deepakraj; Committee Member: Kornegay, Kevin; Committee Member: Tentzeris, Emmanoui

    Cost-effective semiconductor technologies for RF and microwave applications

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    Exploiting mm-wave communications to boost the performance of industrial wireless networks

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    This work explores the potentiality of millimeter waves (mmW) as physical layer in industrial wireless networks. Innovative models and a link design method are proposed to achieve reliable communication, at a distance of tens of meters for a single hop, even in harsh environments. By exploiting the worldwide-free band of several GHz, available around 60 GHz, mmW links allow to achieve a performance boosting of up to two orders of magnitude, w.r.t. conventional sub-6-GHz wireless links, in indoor industrial environments. Time slotted channel hopping and frequency-diversity can be implemented with a large number of channels, and with high bit rate (several Mb/s per channel). This allows for robust networking of high data-rate sensors, such as cameras, radars, or laser scanners. Featuring a low bit error rate, mmW communication allows for low-latency link and large number of hops in networks with a large radius. Finally, it ensures interference separation from operating frequencies of electrical machines, switching converters, and other industrial wireless networks (e.g., 802.11 or 802.15). Implementation results for key HWblocks in low-cost technologies show the feasibility of mmW communication nodes with low-power and compact size
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