3D TCAD modeling of NO2CNT FET sensors

A new approach for TCAD modeling of CNT FET gas sensors is presented, whose key feature is the use of an effective Gaussian DOS to mimic the 1D CNT DOS. The TCAD procedure has been applied to the simulation of a suspended CNT FET for NO2sensing. Our results indicate that the model is able to provide I-V characteristics in excellent agreement with the experimental data, both before and after gas exposure